摘要:
It is an object of the present invention to provide a method that allows the production of peptides that are equal to or longer than tripeptides easily, inexpensively and at high yield without going through a complex synthesis method. The inventors of the present invention have found a novel enzyme that efficiently produces a peptide from bacteria belonging to the genus Empedobacter or the genus Sphingobacterium. In the present invention, this enzyme is allowed to act on a carboxy component and an amine component to produce peptides that are equal to or longer than tripeptides.
摘要:
DNA and recombinant DNA that encode a peptide-forming enzyme, a method for producing a peptide-forming enzyme, and a method for producing a dipeptide are disclosed. A method for producing a dipeptide includes producing a dipeptide from a carboxy component and an amine component by using a culture of a microbe belonging to the genus Sphingobacterium and having the ability to form the dipeptide from the carboxy component and the amine component, a microbial cell separated from the culture, treated microbial cell product of the microbe or a peptide-forming enzyme derived from the microbe.
摘要:
A multimode input circuit comprises a input terminal, first outputting circuit including a buffer circuit, for receiving a first signal having a first amplitude variation via the input terminal and outputting the first signal of a preset potential; second outputting circuit for receiving a second signal having a second amplitude variation different from the first amplitude variation via the input terminal and outputting a third signal of a preset potential, the second outputting circuit including a power source supplying terminal for supplying the same potential as the maximum potential of the second signal, a first FET having a source connected to said power source supplying terminal, a gate supplied with a selection signal for specifying one of the input signals to be selected by the multimode input circuit and a drain, and a second FET formed to make a complementary structure together with the first FET and having a drain connected to the drain of the first FET, a gate connected to the input terminal and a source connected to a circuit ground, and selecting circuit for receiving the first and third signals from the first and second outputting circuit and a selection signal from the exterior and selecting and outputting one of the first and third signals according to the state of the selection signal.
摘要:
A P-well region is provided in a semiconductor substrate of N-type. A P-channel MOSFET is arranged in the N-type substrate while an N-channel MOSFET is arranged in the P-well region. The drain regions of the respective MOSFETs consist of high concentration impurity diffused regions and low concentration impurity diffused regions arranged about the respective high concentration impurity diffused regions. Also, a drain electrode is provided to cover the entire of the high and low concentration impurity diffused regions.
摘要:
A non-volatile semiconductor device includes word lines, and a non-volatile memory cell array having a plurality of non-volatile memory cells respectively connected to the word lines. The non-volatile semiconductor memory device further includes a level shifter for receiving, in a programmming mode, an address signal supplied from outside, and shifting the potential level of the address signal to a higher programming potential level, and a row decoder, provided between the word lines and the level shifter, for receiving and decoding the address signal which has been shifted by the level shifter, and selecting one of the word lines in accordance with the result of the decoding of the address signal, and setting the potential of the selected word line to the programming potential level.