摘要:
A method and system that utilize the expressiveness of hardware description languages for efficiently and comprehensively monitoring performance characteristics of a digital circuit design during simulation. According to the present invention, a design entity that is part of a digital circuit design is first described utilizing a hardware description language. Next, a counting instrument is described utilizing the same hardware description language. The counting instrument is designed to detect occurrences of a count event within the design entity during simulation of the digital circuit design. The counting instrument is associated with the design entity utilizing a non-conventional call, such that the counting instrument may be utilized to monitor each instantiation of the design entity within the simulation model without the instrumentation entity becoming incorporated into the digital circuit design. In association with the counting instrument, a linear feedback shift register is automatically generated for recording the number of occurrences of the count event within the design entity.
摘要:
A power semiconductor diode is provided. The power semiconductor diode includes a semiconductor substrate having a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, and a drift region of the first conductivity type arranged between the first emitter region and the second emitter region. The drift region forms a pn-junction with the second emitter region. A first emitter metallization is in contact with the first emitter region. The first emitter region includes a first doping region of the first conductivity type and a second doping region of the first conductivity type. The first doping region forms an ohmic contact with the first emitter metallization, and the second doping region forms a non-ohmic contact with the first emitter metallization. A second emitter metallization is in contact with the second emitter region.
摘要:
Methods, data processing systems, and program products supporting the insertion of clone latches within a digital design are disclosed. According to one method, a parent latch within the digital design is specified in an HDL statement in one of the HDL files representing a digital design. In addition, a clone latch is specified within the digital design utilizing an HDL clone latch declaration. An HDL attribute-value pair is associated with the HDL clone latch declaration to indicate a relationship between the clone latch and the parent latch according to which the clone latch is automatically set to a same value as the parent latch when the parent latch is set. Thereafter, when a configuration compiler receives one or more design intermediate files containing the clone latch declaration, the configuration compiler creates at least one data structure in a configuration database representing the clone latch and the relationship between the clone latch and the parent latch.
摘要:
According to a method of data processing, a data set including at least one entry specifying a signal group by a predetermined signal group name is received by a data processing system. In response to receipt of the data set, the entry in the data set is processed to identify the signal group name. Signal group information associated with an event trace file containing simulation results is accessed to determine signal names of multiple signals that are members of the signal group. Simulation results from the event trace file that are associated with instances of the multiple signals are then included within a presentation of simulation results.
摘要:
Embodiments of the invention relate generally to a method for manufacturing an integrated circuit, a method for manufacturing a cell arrangement, an integrated circuit, a cell arrangement, and a memory module. In an embodiment of the invention, a method for manufacturing an integrated circuit having a cell arrangement is provided, including forming at least one semiconductor fin structure having an area for a plurality of fin field effect transistors, wherein the area of each fin field effect transistor includes a first region having a first fin structure width, a second region having a second fin structure width, wherein the second fin structure width is smaller than the first fin structure width. Furthermore, a plurality of charge storage regions are formed on or above the second regions of the semiconductor fin structure.
摘要:
According to a method of data processing, a data set including at least one entry specifying a signal group by a predetermined signal group name is received by a data processing system. In response to receipt of the data set, the entry in the data set is processed to identify the signal group name. Signal group information associated with an event trace file containing simulation results is accessed to determine signal names of multiple signals that are members of the signal group. Simulation results from the event trace file that are associated with instances of the multiple signals are then included within a presentation of simulation results.
摘要:
An integrated circuit arrangement and fabrication method is presented. The integrated circuit arrangement contains a semiconductor and a metal electrode. The contact area between a semiconductor and the electrode is increased without increasing the lateral dimensions using partial regions of the semiconductor and/or of the electrode that extend through a transition layer between the semiconductor and electrode.
摘要:
According to one method of simulation processing, instrumentation code, such as an runtime executive (rtx), receives one or more statements describing an count event and identifying the count event as an outlying count event. While simulating a design utilizing the HDL simulation model, occurrences of the outlying count event are counted to obtain a count event value. Simulation result data obtained from simulating the design is then received and processed. In the processing, the count event value is recorded within a data storage subsystem responsive to a determination of whether or not the count event value of the outlying count event exceeds a previously recorded count event value.
摘要:
A semiconductor memory having a multitude of memory cells (21-1), the semiconductor memory having a substrate (1), at least one wordline (5-1), a first (15-1) and a second line (15-2; 16-1), wherein each of the multitude of memory cells (21-1) comprises a first doping region (6) disposed in the substrate (1), a second doping region (7) disposed in the substrate (1), a channel region (22) disposed in the substrate (1) between the first doping region (6) and the second doping region (7), a charge-trapping layer stack (2) disposed on the substrate (1), on the channel region (22), on a portion of the first doping region (6) and on a portion of the second doping region (7). Each memory cell (21-1) further comprises a conductive layer (3) disposed on the charge-trapping layer stack (2), wherein the conductive layer (3) is electrically floating. A dielectric layer (4) is disposed on a top surface of the conductive layer (3) and on sidewalls (23) of the conductive layer (3). The first line (15-1) extends along a first direction and is coupled to the first doping region (6), and the second line (15-2; 16-1) extends along the first direction and is coupled to the second doping region (7). The at least one wordline (5-1) extends along a second direction and is disposed on the dielectric layer (4).
摘要:
According to a method of simulation processing, an instrumented simulation executable model of a design is built by compiling one or more hardware description language (HDL) files specifying one or more design entities within the design and one or more instrumentation entities and instantiating instances of the one or more instrumentation entities within instances of the one or more design entities. Operation of the design is then simulated utilizing the instrumented simulation executable model. Simulating operation includes each of multiple instantiations of the one or more instrumentation entities generating a respective external phase signal representing an occurrence of a particular phase of operation and instrumentation combining logic generating from external phase signals of the multiple instantiations of the one or more instrumentation entities an aggregate phase signal representing an occurrence of the particular phase.