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公开(公告)号:US20160238860A1
公开(公告)日:2016-08-18
申请号:US15027096
申请日:2013-10-15
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Di Liang , David A. Fattal
CPC classification number: G02F1/025 , G02B6/29335 , G02B6/29338 , G02B6/29341 , G02B6/29395 , G02F2001/0152 , G02F2203/15 , H01S5/026 , H01S5/0261
Abstract: Coupling modulation of an optical resonator employs a variable modal index to provide modulation of optical signal coupling. A coupling-modulated optical resonator includes an optical resonator having a coupled portion and a bus waveguide having a modulation section adjacent to and coextensive with and separated by a gap from the coupled portion. The modulation section is to modulate coupling of an optical signal between the optical resonator and the bus waveguide according to a variable difference between a modal index of the bus waveguide modulation section and a modal index of the optical resonator coupled portion.
Abstract translation: 光谐振器的耦合调制采用可变模态指数来提供光信号耦合的调制。 耦合调制光谐振器包括具有耦合部分的光谐振器和具有与耦合部分相邻并与间隔开并与之分开的调制部分的总线波导。 调制部分根据总线波导调制部分的模态指数与光谐振器耦合部分的模态指数之间的可变差值,调制光学谐振器和总线波导之间的光信号的耦合。
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82.
公开(公告)号:US11927819B2
公开(公告)日:2024-03-12
申请号:US17454410
申请日:2021-11-10
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Sudharsanan Srinivasan , Di Liang
CPC classification number: G02B6/4295 , G02B6/12004 , G02B6/4274 , G02B6/4283 , G02B6/4286 , H01S5/026 , H01S5/0264 , H01S5/2018 , G02B2006/12085 , G02B2006/12097 , G02B2006/12121 , G02B2006/12123 , G02B2006/12128 , G02B2006/12138
Abstract: Examples described herein relate to an optical device with an integrated light-emitting structure to generate light and a waveguide integrated capacitor to monitor light. The light-emitting structure may emit light upon the application of electricity to the optical device. The waveguide integrated capacitor may be formed under the light-emitting structure to monitor the light emitted by the light-emitting structure. The waveguide integrated capacitor includes a waveguide region carrying at least a portion of the light. The waveguide region includes one or more photon absorption sites causing the generation of free charge carriers relative to an intensity of the light confined in the waveguide region resulting in a change in the conductance of the waveguide region.
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83.
公开(公告)号:US20230143150A1
公开(公告)日:2023-05-11
申请号:US17454410
申请日:2021-11-10
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Sudharsanan Srinivasan , Di Liang
IPC: G02B6/42
CPC classification number: G02B6/4295 , G02B6/4274
Abstract: Examples described herein relate to an optical device with an integrated light-emitting structure to generate light and a waveguide integrated capacitor to monitor light. The light-emitting structure may emit light upon the application of electricity to the optical device. The waveguide integrated capacitor may be formed under the light-emitting structure to monitor the light emitted by the light-emitting structure. The waveguide integrated capacitor includes a waveguide region carrying at least a portion of the light. The waveguide region includes one or more photon absorption sites causing the generation of free charge carriers relative to an intensity of the light confined in the waveguide region resulting in a change in the conductance of the waveguide region.
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公开(公告)号:US20230014190A1
公开(公告)日:2023-01-19
申请号:US17305892
申请日:2021-07-16
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Yuan Yuan , Sudharsanan Srinivasan , Di Liang , Zhihong Huang
IPC: G02B6/42
Abstract: Examples described herein relate to a ring resonator. The ring resonator may include an annular waveguide having a waveguide base and a waveguide core narrower than the waveguide base. Further, the ring resonator may include an outer contact region comprising a first-type doping and disposed annularly and at least partially surrounding an outer annular surface of the waveguide base. Furthermore, the ring resonator may include an inner contact region comprising a second-type doping and disposed annularly contacting an inner annular surface of the waveguide base. Moreover, the ring resonator may include an annular detector region disposed annularly at a distance from and covering at least a portion of a surface of the waveguide core and contacting the outer contact region.
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公开(公告)号:US11442235B1
公开(公告)日:2022-09-13
申请号:US17444000
申请日:2021-07-29
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Di Liang , Sudharsanan Srinivasan
IPC: G02B6/42 , H04B10/079 , G01J1/46 , H04B10/69 , H04B10/50
Abstract: Examples described herein relate to an optical system. In some examples, the optical system may include a light-conducting medium and a first optical device to transmit an optical signal over the light-conducting medium. Further, the optical system may include a second optical device coupled to the light-conducting medium to receive an optical signal transmitted by the first optical device. In some examples, at least one of the first optical device, the light-conducting medium, and the second optical device may include an in-situ capacitive structure to detect light intensity. Moreover, the optical system may include a monitoring circuit electrically coupled to the in-situ capacitive structure to generate an electrical signal indicative of the light intensity detected by the in-situ capacitive structure.
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公开(公告)号:US20220271186A1
公开(公告)日:2022-08-25
申请号:US17249192
申请日:2021-02-23
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Yuan Yuan , Di Liang , Xiaoge Zeng , Zhihong Huang
IPC: H01L31/107 , H01L31/0336 , H01L31/02
Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.
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公开(公告)号:US20220123159A1
公开(公告)日:2022-04-21
申请号:US17073152
申请日:2020-10-16
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Yuan Yuan , Zhihong Huang , Di Liang , Xiaoge Zeng
IPC: H01L31/0232 , H01L31/108 , H01L27/144 , H01L31/18 , G02B6/42 , G02B6/293 , H04B10/25 , H04B10/516 , H04B10/61
Abstract: Integrated optical filter and photodetectors and methods of fabrication thereof are described herein according to the present disclosure. An example of an integrated optical filter and photodetector described herein includes a substrate, an insulator layer on the substrate, and a semiconductor layer on the insulator layer. An optical filter having a resonant cavity is formed in or on the semiconductor layer. The integrated optical filter and photodetector further includes two first metal fingers and a second metal finger interdigitated between the two first metal fingers on the semiconductor layer forming Schottky barriers. The first metal fingers are constructed from a different metal relative to the second metal finger.
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公开(公告)号:US20220069541A1
公开(公告)日:2022-03-03
申请号:US17004955
申请日:2020-08-27
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Bassem Tossoun , Di Liang , John Paul Strachan
Abstract: An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.
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公开(公告)号:US11227967B2
公开(公告)日:2022-01-18
申请号:US16949723
申请日:2020-11-12
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Xiaoge Zeng , Zhihong Huang , Di Liang
IPC: G01J1/44 , H01L31/107 , H01L31/18
Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.
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公开(公告)号:US11201449B2
公开(公告)日:2021-12-14
申请号:US16527352
申请日:2019-07-31
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Terrel Morris , Di Liang , Raymond G. Beausoleil , Ashkan Seyedi
IPC: H01S3/00 , H01S5/00 , H04B10/50 , H04B10/572
Abstract: Processes and apparatuses described herein provide for an efficient cyclical fiber-optic connection between a source component and multiple destination components in a computing environment. A comb laser generates a laser signal that includes laser light of a first frequency that is red-shifted from a carrier frequency. The comb laser concurrently transmits the laser signal to four ring resonators via an optical waveguide. Three of the ring resonators are initially configured for optical resonance at a second frequency that is blue-shifted from the carrier frequency, while one of the ring resonators is initially configured for optical resonance at the first frequency. The laser signal is modulated to communicate data to a first target location associated with the ring resonator that is initially configured for optical resonance at the first frequency.
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