摘要:
An integrated device comprising a storage location, wherein data stored in the storage location is repeatedly refreshed with a first predetermined refresh rate during a first period of time. The first period of time provides a first predetermined duration. After the end of the first period of time, the data is repeatedly refreshed with a second predetermined refresh rate.
摘要:
An input receiver circuit is provided for receiving a noisy high-speed input signal and for generating a plurality of output signals that can be processed at a low acquisition speed compared to the speed of the high-speed input signal. The input receiver circuit includes an input for receiving the high-speed input signal (data), a plurality of integration elements and a switch for connecting the input to one of the plurality of integration elements for integrating the high-speed input signal. The input receiver circuit further includes a plurality of means for receiving one of the integrated high-speed input signals at a time and for outputting one of the plurality of output signals at a time, and a controller for controlling the switch.
摘要:
A semiconductor component includes an integrated semiconductor chip and a chip housing. The chip housing has first, second, third and fourth conductor tracks that connect input and output connections of the semiconductor chip to external contact connections on the underside and top side of the chip housing in such a way that a loop back interconnection of a plurality of semiconductor components stacked one on top of another is made possible without subsequent structural alterations to the chip housings thereof.
摘要:
A memory module is proposed which has a first contact bank at a first edge of its electronic printed circuit board and a second contact bank at a second edge. The printed circuit board has first lines that reach from the first contact bank as far as input connections of at least some of the semiconductor components. The printed circuit board has second conductor lines that reach from output connections of at least some of the semiconductor components as far as the first contact bank. The printed circuit board has third conductor lines that reach from output connections of at least some of the semiconductor components as far as the second contact bank. The printed circuit board has fourth conductor lines that reach from the second contact bank as far as input connections of at least some of the semiconductor components.
摘要:
A memory module stores data in the form of code words, each code word comprising useful bits and check bits for error correction. The memory module contains a first group of the memory devices including check bits and a second group of the memory devices including useful bits, the second group memory devices forming ranks, each rank being addressed as a whole, the ranks forming rank groups, each rank group including at least two ranks and a first group memory device. The memory module further contains a connecting device transferring bit packets each containing useful bits and check bits in the parallel format between an interface of the memory module and the memory devices of a selected rank group
摘要:
Method for repairing hardware faults in memory chips. According to one embodiment, a method is provided for repairing bit errors in memory chips having a multiplicity of memory cells. The method can include detecting bit errors using an error identification algorithm. Further, the method can include determining the addresses of faulty memory cells. The method can also include setting a data bit initiating a repair mode in response to detecting a bit error. In the repair mode, a signal present on a data line to the memory chips can be interpreted as a repair command to perform a repair. In addition, the method can include repairing the bit errors by activating redundant memory cells.
摘要:
The present invention includes a semiconductor memory modules and semiconductor memory systems using the same. The modules divide a conventional DIMM into a series of separate, smaller memory modules. Each memory module includes at least one semiconductor memory chip arranged on a substrate; CAwD signal input lines arranged on the substrate in a first predetermined line number and connecting one of the semiconductor memory chips to CAwD input signal pins on the substrate; and rD signal output lines arranged on the substrate in a second predetermined line number and connecting the one or a last semiconductor memory to a second number of rD output signal pins of the substrate. In a semiconductor memory system including the semiconductor memory modules, each memory module is separately connected to a memory controller by the CAwD signal input linesand the rD signal output lines in a respective point-to-point fashion.
摘要:
A method for setting an address of a rank in a memory module having a number of memory chips distributed along a byte lane includes setting the first memory chip of the byte lane to have a first rank address, generating a second rank address therein from the first rank address, and driving the second rank address to a second one of the memory chips. Alternatively, the first rank address may be driven to the second memory chip, and then, a second rank address is generated in that second memory chip. Further, the second memory chip is set to have the second rank address in response to the driving the second/first rank address. A power-up sequence after voltage supply, or command signals sent via a serial management bus or the command address bus can be used to initiate the setting of ranks. The rank addresses are re-driven to adjacent memory chips by DQ-lines along a byte lane.
摘要:
A circuit system includes a means for controlling a first and a second memory unit by means of a differential control signal. The differential control signal includes a first control signal and a second control signal, which is inverted to the first control signal. Further, the circuit system comprises a differential control signal line, which includes a first signal line for routing the first control signal and a second signal line for routing the second control signal. The first switching unit is connected via the first signal line and the second circuit unit is connected via the second signal line to the means for controlling.
摘要:
The invention relates to a semiconductor memory module having at least one memory chip and a buffer chip, which drives clock, address and command signals to the memory chip and drives data signals to, and receives them from, the memory chip via a module-internal clock, address, command and data bus. The buffer chip forms an interface to an external memory main bus. The data bus lines and/or the clock, command and address bus lines are respectively connected to the buffer chip at their two ends and are capable of being driven by the buffer chip from these two ends. Control means are being provided and set up in such a manner that they respectively match the directions of propagation of the data signals and of the clock, command and address signals on the corresponding bus lines during writing and reading.