摘要:
A clock recovery circuit has a boundary detection circuit detecting a boundary in an input signal in accordance with a first signal, and performs recovery of a clock by controlling the timing of the first signal in accordance with the detected boundary. The clock recovery circuit has a boundary detection timing varying circuit and a variation reducing circuit. The boundary detection timing varying circuit dynamically varies boundary detection timing in the boundary detection circuit by applying a variation to the first signal, and the variation reducing circuit reduces a phase variation occurring in the recovered clock in accordance with the dynamic variation of the boundary detection timing performed by the boundary detection timing varying circuit.
摘要:
A receiver has an offset application circuit for applying a known offset to an input signal, and a decision circuit for comparing the offset-applied input signal with a reference voltage. The level of the input signal is determined based on the known offset and on the result output from the decision circuit. With this configuration, a large common mode voltage can be eliminated in a circuit used for signal transmission.
摘要:
Equalizing a signal includes receiving a data sequence signal having an amplitude. An adjustment of the data sequence signal operable to equalize the data sequence signal is determined. A control signal operable to adjust the amplitude of the data sequence signal in accordance with the adjustment is generated, where the control signal has an analog form. The amplitude of the data sequence signal is adjusted using the control signal in order to equalize the data sequence signal.
摘要:
A receiver circuit has a sampling circuit, a buffer circuit, a determining circuit, and a buffer control circuit. The sampling circuit samples an input signal, and the buffer circuit buffers an output of the sampling circuit. The determining circuit determines an output of the buffer circuit, and the buffer control circuit keeps a small input signal dependency of the output of the buffer circuit until carrying out the sampling. Consequently, an inter symbol interference caused by characteristics of a transmission path which poses a problem for receiving a high-speed signal can be invalidated, and therefore the high-speed received signal can be determined with a higher accuracy.
摘要:
An output circuit device has an output circuit connected between a first power supply line and a second power supply line via a control circuit having at least one isolating transistor. A control voltage held at a constant level is applied to a control electrode of the isolating transistor, and the control voltage is a voltage at a level that works to attenuate high-frequency components contained in a voltage supplied from the first or the second power supply line.
摘要:
An output circuit device has an output circuit connected between a first power supply line and a second power supply line via a control circuit having at least one isolating transistor. A control voltage held at a constant level is applied to a control electrode of the isolating transistor, and the control voltage is a voltage at a level that works to attenuate high-frequency components contained in a voltage supplied from the first or the second power supply line.
摘要:
A ferroelectric memory capable of writing data at a small operation voltage has an insulated-gate field effect transistor, a ferroelectric film, and a pair of capacitor electrodes formed on the ferroelectric film and facing each other, one of the pair of capacitor electrodes being electrically connected to the insulated gate. A ferroelectric memory device with a simple structure has an insulated-gate field effect transistor including a source, a drain, and an insulated gate, and a ferroelectric capacitor connected between the drain and the insulated gate.
摘要:
An electron device comprises a first dielectric layer (103) having a first thickness determined to allow the tunneling of carriers therethrough and a first dielectric constant, a second dielectric layer (104) provided in contact with the first dielectric layer, the second dielectric layer having a second thickness substantially larger than the first thickness and a second dielectric constant that is substantially larger than the first dielectric constant, a first electrode (101) provided on the first dielectric layer for injecting the carriers, and a second electrode (108) provided in contact with the second dielectric layer for controlling a flow of the carriers through the second dielectric layer in response to a control voltage supplied thereto.