公开(公告)号：US06291943B1

公开(公告)日：2001-09-18

申请号：US09254886

申请日：1999-06-04

申请人： Ryuichi Murai ,  Akira Shiokawa ,  Hiroyosi Tanaka ,  Yoshiki Sasaki ,  Masaki Aoki ,  Masatoshi Kudoh ,  Yuusuke Takada ,  Hiroyuki Kado

发明人： Ryuichi Murai ,  Akira Shiokawa ,  Hiroyosi Tanaka ,  Yoshiki Sasaki ,  Masaki Aoki ,  Masatoshi Kudoh ,  Yuusuke Takada ,  Hiroyuki Kado

IPC分类号： H01J1312

CPC分类号： H01J11/12 ,  H01J11/14 ,  H01J11/50

摘要： The object of the present invention is to provide a gas discharge panel, where the conversion efficiency of discharge energy into visible rays and the panel brightness are improved, with the color purity being improved as far as possible. To achieve this object, in a gas discharge panel, the pressure of discharge gas is set in a range of 800-4000 Torr, that is higher than a conventional gas pressure. Also, a rare gas mixture including helium, neon, xenon, and argon is used as discharge gas charged into discharge spaces, instead of conventional discharge gas. Here, it is preferable that the proportion of Xe is set to 5% by volume or less, that of Ar 0.5% by volume or less, and that of He under 55% by volume. With this rare gas mixture, the light-emission efficiency is improved, with the firing voltage being suppressed. Furthermore, display electrodes and address electrodes are arranged on the surface of either of a front cover plate and a back plate, with a dielectric layer existing between the display electrodes and the address electrodes. With this construction, addressing is performed with a relatively low voltage even if the gas pressure is high.

摘要翻译： 本发明的目的是提供一种气体放电面板，其中放电能量转换成可见光的转换效率和面板亮度得到改善，色纯度尽可能地得到改善。 为了达到这个目的，在气体放电面板中，放电气体的压力设定在比常规气体压力高的800-4000乇的范围内。 此外，使用包含氦，氖，氙和氩的稀有气体混合物作为放电气体，而不是传统的放电气体。 这里，优选Xe的比例为5体积％以下，Ar为0.5体积％以下，He为55体积％以下。 利用这种稀有气体混合物，随着点火电压的抑制，发光效率提高。 此外，显示电极和寻址电极布置在前盖板和背板之一的表面上，在显示电极和寻址电极之间存在电介质层。 利用这种结构，即使气体压力高，也以相对低的电压进行寻址。

公开(公告)号：US6046929A

公开(公告)日：2000-04-04

申请号：US282469

申请日：1999-03-31

申请人： Masaki Aoki ,  Akio Itoh ,  Mitsuteru Mushiga ,  Ko Nakamura ,  Takashi Eshita

发明人： Masaki Aoki ,  Akio Itoh ,  Mitsuteru Mushiga ,  Ko Nakamura ,  Takashi Eshita

IPC分类号： G11C11/22 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11507 ,  G11C11/223

摘要： The source region and gate electrode of a field effect transistor including a drain region and a gate electrode in addition to the source region are connected by a first ferroelectric capacitor. The drain region and gate electrode are connected by a second ferroelectric capacitor. A ferroelectric memory device suitable for high integration is provided.

摘要翻译： 除了源极区域之外，包括漏极区域和栅极电极的源极区域和栅极电极通过第一铁电体电容器连接。 漏区和栅极通过第二铁电电容器连接。 提供了适用于高集成度的铁电存储器件。

公开(公告)号：US4842633A

公开(公告)日：1989-06-27

申请号：US235301

申请日：1988-08-23

申请人： Kiyoshi Kuribayashi ,  Makoto Umetani ,  Hideto Monji ,  Masaki Aoki

发明人： Kiyoshi Kuribayashi ,  Makoto Umetani ,  Hideto Monji ,  Masaki Aoki

IPC分类号： B22F5/00 ,  C03B11/08

CPC分类号： C03B11/086 ,  B22F5/007 ,  C03B11/082 ,  C03B2215/12 ,  C03B2215/16 ,  C03B2215/17 ,  C03B2215/22 ,  C03B2215/32 ,  C03B2215/34 ,  C03B2215/41 ,  C03B2215/412 ,  Y10S359/90

摘要： A base material excellent in heat resistance and high-temperature strength is processed into a desired configuration. The processed base material is coated with a heat-resistant film having excellent strength at high temperatures and low reactivity with a glass material to be molded. A resist is applied on the heat resistant film and a desired pattern is drawn thereon by means of electron beam, ion beam, hologram exposure, or ordinary photolithography. Or if a mold having deep unevenness of the pressing surface is required, the resist is applied after an intermediate layer which permits selective etching is formed on the heat resistant film, and the required pattern is drawn thereon by means of electron beam, ion beam, hologram exposure, or ordinary photolithography. The intermediate layer is removed by wet etching or dry etching to emphasize unevenness of the mask. The resist film or the resist film and intermediate layer film are completely removed and a part of the heat-resistant film is removed to obtain a mold having the desired configuration of the molding surface.

摘要翻译： 将耐热性和耐高温性优异的基材加工成所希望的结构。 加工后的基材在高温下具有优异的强度和与待成型的玻璃材料的反应性低的耐热膜。 将抗蚀剂施加在耐热膜上，并且通过电子束，离子束，全息曝光或普通光刻法将期望的图案拉到其上。 或者如果需要具有挤压表面的深度不均匀的模具，则在耐热膜上形成允许选择性蚀刻的中间层之后施加抗蚀剂，并且通过电子束，离子束， 全息曝光或普通光刻。 通过湿蚀刻或干蚀刻去除中间层，以强调掩模的不均匀性。 完全除去抗蚀剂膜或抗蚀膜和中间层膜，除去一部分耐热膜，得到具有所需成型面的模具。

公开(公告)号：US4811148A

公开(公告)日：1989-03-07

申请号：US22577

申请日：1987-03-10

申请人： Masaki Aoki ,  Masayuki Sakai ,  Hideo Torii ,  Hideyuki Okinaka ,  Hozumi Hirota

发明人： Masaki Aoki ,  Masayuki Sakai ,  Hideo Torii ,  Hideyuki Okinaka ,  Hozumi Hirota

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/23 ,  G11B5/235 ,  G11B5/22 ,  G11B5/251

CPC分类号： G11B5/1475 ,  G11B5/232 ,  G11B5/235

摘要： An iron-aluminum-silicon (Fe-Al-Si) series magnetic alloy magnetic head is described. The magnetic head is filled between front gap forming surfaces (the front gap facing a magnetic tape) of a pair of Fe-Al-Si core pieces with non-magnetic ceramic films formed on the respective front gap forming surfaces and a glass film formed therebetween, and between rear gap forming surfaces for junction with an Ag-Cu-In series alloy film.

摘要翻译： 描述了铁 - 铝 - 硅（Fe-Al-Si）系列磁性合金磁头。 磁头填充在一对Fe-Al-Si芯片的前间隙形成表面（面对磁带的前间隙）之间，其中形成在相应的前间隙形成表面上的非磁性陶瓷膜和在其间形成的玻璃膜 以及用于与Ag-Cu-In系合金膜结合的后间隙形成表面之间。

公开(公告)号：US4721518A

公开(公告)日：1988-01-26

申请号：US807230

申请日：1985-12-10

申请人： Hideto Monji ,  Masaki Aoki ,  Hideo Torii ,  Hideyuki Okinaka

发明人： Hideto Monji ,  Masaki Aoki ,  Hideo Torii ,  Hideyuki Okinaka

IPC分类号： C03B11/00 ,  B21D37/01 ,  B32B15/04 ,  C03B11/08 ,  C23C14/06 ,  C23C16/30 ,  G02B3/00 ,  C03B5/18

CPC分类号： C03B11/086 ,  C03B2215/12 ,  C03B2215/17 ,  C03B2215/31 ,  C03B2215/32 ,  C03B2215/34 ,  Y10S425/026

摘要： A mold for press-molding glass elements comprising a base member made of a super hard alloy or a cermet; at least one intermediate layer made of a nitride, a carbide, an oxide or a metal, provided on the base member; and a noble metal layer provided on the intermediate layer for forming a mold surface. An active metal contained in the base member is prevented from diffusing to the mold surface by the presence of the intermediate layer.

摘要翻译： 一种用于压制玻璃元件的模具，包括由超硬合金或金属陶瓷制成的基底构件; 至少一个由氮化物，碳化物，氧化物或金属制成的中间层，设置在基体上; 以及设置在中间层上用于形成模具表面的贵金属层。 通过存在中间层，防止了包含在基底构件中的活性金属向模具表面扩散。

公开(公告)号：US4433408A

公开(公告)日：1984-02-21

申请号：US356268

申请日：1982-03-09

申请人： Koichi Azuma ,  Masahiro Nagasawa ,  Hiroshi Yamazoe ,  Masaki Aoki

发明人： Koichi Azuma ,  Masahiro Nagasawa ,  Hiroshi Yamazoe ,  Masaki Aoki

IPC分类号： G11B3/46 ,  G11B3/02

CPC分类号： G11B3/46 ,  Y10T29/4981 ,  Y10T428/13 ,  Y10T428/2916

摘要： A cantilever for a pickup cartridge comprising a base in the form of a solid rod or a pipe coated with a layer of a substance exhibiting a high modulus of elasticity ratio higher than 5000 Kg/mm.sup.2. The substance is for example boron or a boride.

摘要翻译： 一种用于拾取盒的悬臂，其包括实心棒状的基部或涂覆有显示高于5000Kg / mm 2的高弹性模量比的物质层的管。 该物质例如是硼或硼化物。

公开(公告)号：US20070258283A1

公开(公告)日：2007-11-08

申请号：US11812294

申请日：2007-06-18

申请人： Masaki Aoki

发明人： Masaki Aoki

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C2213/78 ,  G11C2213/79

摘要： The magnetic memory device comprises: a memory cell including two magnetoresistive effect elements serially connected to each other, and a select transistor connected to a connection node between the two magnetic resistant devices, a bit line connected to the connection node of the magnetoresistive effect elements via the select transistor, and a read circuit for reading information memorized in the magnetoresistive effect elements, based on a voltage of the connection node outputted to the bit line.

摘要翻译： 磁存储器件包括：包括彼此串联连接的两个磁阻效应元件的存储单元，以及连接到两个磁阻器件之间的连接节点的选择晶体管，连接到磁阻效应元件的连接节点的位线 选择晶体管和用于读取存储在磁阻效应元件中的信息的读取电路，基于输出到位线的连接节点的电压。

公开(公告)号：US20070247943A1

公开(公告)日：2007-10-25

申请号：US11808967

申请日：2007-06-14

申请人： Yoshihiro Sato ,  Masaki Aoki

发明人： Yoshihiro Sato ,  Masaki Aoki

IPC分类号： G11C7/02

CPC分类号： G11C11/16

摘要： A magnetic memory device comprises a plurality of bit lines BL; memory cells MC disposed at the respective plurality of bit lines, and each including a magnetoresistive effect element MTJ whose resistance value is changed with changes of magnetization direction, and a select transistor Tr connected to the magnetoresistive effect element MTJ, the magnetoresistive effect element MC having one terminal connected to the bit line BL and the other terminal connected to a first signal line GND via the select transistor; dummy cells DC disposed at the respective plurality of bit lines BL, and each including a resistance element R of a constant resistance value, the resistance element having one terminal connected to the bit line BL and the other terminal connected to a second signal line SIGD; and a voltage sense amplifier SA connected to the plurality of bit lines BL.

摘要翻译： 磁存储器件包括多个位线BL; 存储单元MC设置在相应的多个位线处，并且每个存储单元MC包括电阻值随着磁化方向的变化而变化的磁阻效应元件MTJ，以及连接到磁阻效应元件MTJ的选择晶体管Tr，磁阻效应元件MC具有 一个端子连接到位线BL，另一个端子经由选择晶体管连接到第一信号线GND; 设置在相应的多个位线BL上的虚设单元DC，并且每个包括具有恒定电阻值的电阻元件R，该电阻元件具有连接到位线BL的一个端子和连接到第二信号线SIG < SUB> D 以及连接到多个位线BL的电压检测放大器SA。

公开(公告)号：US07063584B2

公开(公告)日：2006-06-20

申请号：US10478890

申请日：2002-05-28

申请人： Hiroyuki Yonehara ,  Masaki Aoki ,  Keisuke Sumida ,  Morio Fujitani ,  Hideki Asida

发明人： Hiroyuki Yonehara ,  Masaki Aoki ,  Keisuke Sumida ,  Morio Fujitani ,  Hideki Asida

IPC分类号： H01J9/00

CPC分类号： H01J9/242 ,  H01J9/02 ,  H01J2211/36

摘要： A manufacturing method for a gas discharge display panel includes a disposing step of disposing on a substrate, material of one of an electrode, a dielectric layer, a barrier rib, and a phosphor layer; and a baking step of baking the substrate on which the material has been disposed, while the substrate is carried on a support platform. The support platform has at least one channel in a surface thereof on which the substrate is placed, extending from a covered area covered by the substrate through to an exposed area not covered by the substrate.

摘要翻译： 气体放电显示面板的制造方法包括在基板上设置电极，电介质层，隔壁和荧光体层之一的材料的配置工序; 以及烘烤步骤，其中将衬底承载在支撑平台上，烘烤已经设置有材料的衬底。 支撑平台在其表面上具有至少一个通道，基底被放置在其上，从被基底覆盖的覆盖区延伸到未被基底覆盖的暴露区域。

公开(公告)号：US06968543B2

公开(公告)日：2005-11-22

申请号：US09729390

申请日：2000-12-04

申请人： Koji Takahara ,  Masaki Aoki

发明人： Koji Takahara ,  Masaki Aoki

IPC分类号： G06F9/44 ,  G06F9/445 ,  G06F9/45

CPC分类号： G06F9/44521 ,  G06F8/447

摘要： An information processing apparatus that enables an undefined variable reference check on a dynamic variable. A dynamic variable specifying section specifies target dynamic variables from a source file. An area specifying section specifies areas ensured in the case of dynamic variables specified by the dynamic variable specifying section being developed into a memory at the time of executing a load module. An initializing section initializes areas specified by the area specifying section to a predetermined value.

摘要翻译： 一种能够对动态变量进行未定义的可变参考检查的信息处理装置。 动态变量指定部分从源文件指定目标动态变量。 区域指定部分指定在执行加载模块时由动态变量指定部分指定的动态变量被确定为开发到存储器中的区域。 初始化部将区域指定部指定的区域初始化为规定值。