公开(公告)号：US07287421B2

公开(公告)日：2007-10-30

申请号：US11482690

申请日：2006-07-10

申请人： Ju-hwan Jung ,  Jun-soo Kim ,  Hyung-cheol Shin ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Jun-soo Kim ,  Hyung-cheol Shin ,  Seung-bum Hong

IPC分类号： G01R31/02

CPC分类号： G01Q60/30 ,  G01Q60/38

摘要： A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

摘要翻译： 提供了具有高分辨率尖端的半导体探针及其制造方法。 半导体探针包括：掺杂有第一杂质的悬臂; 从所述悬臂的端部突出并轻微掺杂与所述第一杂质极性相反的第二杂质的电阻凸部; 以及第一和第二电极区域，形成在电阻凸部的任一侧上并且重掺杂有第二杂质。

公开(公告)号：US07247968B2

公开(公告)日：2007-07-24

申请号：US10922861

申请日：2004-08-23

申请人： Kyoung-lock Baeck ,  Jong-up Jun ,  Ju-hwan Jung ,  Seung-bum Hong

发明人： Kyoung-lock Baeck ,  Jong-up Jun ,  Ju-hwan Jung ,  Seung-bum Hong

IPC分类号： H02K1/00

CPC分类号： H02N1/008

摘要： Provided is a two-axis actuator having a large stage area. The two-axis actuator includes a stage moving in two directions and connected to an upper part of an inertial part. The two-axis actuator is configured to maximize a stage area relative to the overall area of the actuator, thereby increasing the data storage capacity of the stage.

摘要翻译： 提供了具有大台阶面积的双轴致动器。 双轴致动器包括在两个方向上移动并连接到惯性部件的上部的台架。 双轴致动器被配置为使得相对于致动器的总体区域最大化舞台区域，从而增加舞台的数据存储容量。

公开(公告)号：US20060211154A1

公开(公告)日：2006-09-21

申请号：US11384326

申请日：2006-03-21

申请人： Simon Buehlmann ,  Seung-bum Hong

发明人： Simon Buehlmann ,  Seung-bum Hong

IPC分类号： H01L21/00

CPC分类号： G11B5/743 ,  B82Y10/00 ,  G11B9/02 ,  G11B9/149

摘要： A method of manufacturing patterned ferroelectric media, which includes forming an electrode on a substrate; forming features having a predetermined pattern on the electrode, the features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. Also disclosed is a method which includes forming on a substrate an electrode having wells and precursor features formed in the wells of the electrode, the precursor features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. The above first embodiment relates to non-embedded type media, and the above second embodiment relates to embedded type media.

摘要翻译： 一种制造图案化铁电介质的方法，其包括在基底上形成电极; 在电极上形成具有预定图案的特征，所述特征包括用于形成铁电材料的前体; 并使源材料与前体特征反应以将前体特征转变成铁电特征。 还公开了一种方法，其包括在基板上形成具有形成在电极的阱中的阱和前体特征的电极，前体特征包括用于形成铁电材料的前体; 并使源材料与前体特征反应以将前体特征转变成铁电特征。 上述第一实施例涉及非嵌入式介质，并且上述第二实施例涉及嵌入式介质。

公开(公告)号：US20050147018A1

公开(公告)日：2005-07-07

申请号：US10925147

申请日：2004-08-25

申请人： Yun-seok Kim ,  Seung-bum Hong ,  Kwang-soo No

发明人： Yun-seok Kim ,  Seung-bum Hong ,  Kwang-soo No

IPC分类号： G11B9/00 ,  G11B9/02 ,  G11B9/14 ,  G11C11/22

CPC分类号： B82Y10/00 ,  G11B9/02 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1463 ,  G11B9/1472 ,  G11C11/22

摘要： A recording medium including a ferroelectric layer, a nonvolatile memory device including the recording medium and methods of wiring and reading data in the memory device. The recording medium includes: a lower electrode; a ferroelectric layer to which data is recorded, formed on the lower electrode; a barrier layer formed on the ferroelectric layer; and a semiconductor layer formed on the barrier layer. The nonvolatile memory device includes a probe that reads and writes the data. Furthermore, in the method of writing data, a writing voltage is applied between the probe, which contacts the semiconductor layer, and the lower electrode and, in the method of reading data, a state of a remanent polarization of the ferroelectric layer is determined by applying a reading voltage between the probe and the semiconductor layer.

摘要翻译： 包括铁电层的记录介质，包括记录介质的非易失性存储装置以及在存储装置中布线和读取数据的方法。 记录介质包括：下电极; 记录有数据的铁电层，形成在下电极上; 形成在强电介质层上的阻挡层; 以及形成在阻挡层上的半导体层。 非易失性存储器件包括读取和写入数据的探针。 此外，在写入数据的方法中，在与半导体层接触的探针和下部电极之间施加写入电压，并且在读取数据的方法中，强电介质层的剩余极化的状态由 在探针和半导体层之间施加读取电压。

公开(公告)号：US06784475B2

公开(公告)日：2004-08-31

申请号：US10325731

申请日：2002-12-23

申请人： Seung-bum Hong ,  Hyun-jung Shin

发明人： Seung-bum Hong ,  Hyun-jung Shin

IPC分类号： H01L2972

CPC分类号： G11C11/22

摘要： A thermally-stable ferroelectric memory is provided. The ferroelectric memory includes a lower electrode and a ferroelectric layer formed on the top surface of the lower electrode such that a domain having a dielectric polarization is set as a bit. The thickness of the ferroelectric layer is not greater than the size of the bit. Accordingly, a non-volatile ferroelectric memory which is thermally stable is provided, thereby realizing a reliable memory which can store information at high speed and high density and has improved memory retention.

摘要翻译： 提供了热稳定的铁电存储器。 铁电存储器包括形成在下电极的顶表面上的下电极和铁电层，使得具有介电极化的区域被设置为位。 铁电层的厚度不大于钻头的尺寸。 因此，提供了热稳定的非挥发性铁电存储器，从而实现了可以以高速度和高密度存储信息的可靠的存储器，并且具有改善的存储器保持。

公开(公告)号：US06696833B2

公开(公告)日：2004-02-24

申请号：US10138643

申请日：2002-05-06

申请人： Seung-bum Hong ,  Jong Up Jeon ,  Hyun-jung Shin

发明人： Seung-bum Hong ,  Jong Up Jeon ,  Hyun-jung Shin

IPC分类号： G01R3302

CPC分类号： G01Q60/54 ,  G01R33/0385

摘要： A Lorentz force microscope and a method of measuring magnetic domains using Lorentz force are provided. The Lorentz force microscope includes: a conductive probe which is actuated by Lorentz force occurring due to the interaction between a magnetic field of the magnetic medium and current applied into the magnetic field; a bottom electrode which is prepared on one side of the magnetic medium, for charging the magnetic field with electricity; a scanner for supporting the magnetic medium on which the bottom electrode is prepared and actuating the magnetic medium when the conductive probe opposite to a record of the magnetic medium scans the record of the magnetic medium; and an information detector for controlling the scanner and detecting information on magnetization of the magnetic medium from motion components of the conductive probe. Directions of Lorentz force which is applied to the conductive probe are sensed in a state that the conductive probe contacts or does not contact the magnetic medium to detect magnetization directions of the magnetic domains. Thus, a magnetic domain distribution map having improved resolution can be obtained.

摘要翻译： 提供洛伦兹力显微镜和使用洛伦兹力测量磁畴的方法。 洛伦兹力显微镜包括：由于磁介质的磁场和施加到磁​​场中的电流之间的相互作用而产生的由洛伦兹力驱动的导电探针; 制备在磁介质一侧的用于对电磁场充电的底电极; 用于支撑制备底部电极的磁性介质的扫描器，当与磁性介质的记录相对的导电探针扫描磁性介质的记录时，致动磁性介质; 以及信息检测器，用于控制扫描仪并且从导电探针的运动分量检测关于磁介质的磁化的信息。 在导电探针接触或不接触磁介质以检测磁畴的磁化方向的状态下感测施加到导电探针的洛伦兹力的方向。 因此，可以获得具有改善的分辨率的磁畴分布图。

公开(公告)号：US08642155B2

公开(公告)日：2014-02-04

申请号：US13533717

申请日：2012-06-26

申请人： Seung-bum Hong ,  Simon Buehlmann ,  Shin-ae Jun ,  Sung-hoond Choa ,  Eun-joo Jang ,  Yong-kwan Kim

发明人： Seung-bum Hong ,  Simon Buehlmann ,  Shin-ae Jun ,  Sung-hoond Choa ,  Eun-joo Jang ,  Yong-kwan Kim

IPC分类号： G11B7/24

CPC分类号： G11B5/7325 ,  B82Y10/00 ,  G11B5/743 ,  G11B9/02 ,  G11B9/08 ,  G11B9/1472

摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.

摘要翻译： 提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。 所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层 。

公开(公告)号：US20130064918A1

公开(公告)日：2013-03-14

申请号：US13621204

申请日：2012-09-15

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： B29C59/00

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

公开(公告)号：US08304808B2

公开(公告)日：2012-11-06

申请号：US12120816

申请日：2008-05-15

申请人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L29/66

CPC分类号： G11B9/02 ,  H01L29/66462 ,  H01L29/7785 ,  H01L29/7787

摘要： Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source and a drain, and a second semiconductor layer that is heterogeneously combined with the first semiconductor layer. Also, the electric field head further includes a channel between the source and the drain, in a junction region of the first and second semiconductor layers.

摘要翻译： 提供了一种电场头，其包括用于读取记录在记录介质上的信息的电阻传感器。 电阻传感器包括包括源极和漏极的第一半导体层以及与第一半导体层非均匀组合的第二半导体层。 此外，电场头还包括在第一和第二半导体层的结区中的源极和漏极之间的沟道。

公开(公告)号：US08107354B2

公开(公告)日：2012-01-31

申请号：US12038878

申请日：2008-02-28

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

IPC分类号： G11B5/187 ,  G11B9/02

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.

摘要翻译： 提供电场读/写头，制造电场读/写头的方法，以及包括电场读/写头的信息存储装置。 电场读/写头包括：具有面向记录介质的第一表面和垂直于第一表面的第二表面的基板; 以及形成在所述第二表面上并且具有面向所述记录介质的至少一部分的突起，其中包括源极，漏极和沟道的电阻传感器包括在所述突起中。 绝缘层和电场屏蔽层分别进一步依次形成在突起的相对侧上，并且电场屏蔽层中的至少一个是写入电极。