Abstract:
A display panel is provided, which includes a first substrate, a first insulating layer on the first substrate, a semiconductor layer on the first insulating layer, and a second insulating layer on the semiconductor layer and the first insulating layer. The second insulating layer has a surface in contact with the first insulating layer. The second insulating layer has a first region. The first region has a thickness of 40 nm from the surface of the second insulating layer, and the second insulating layer has a fluoride ion gain ratio of 80% to 95% in the first region.
Abstract:
A display panel is provided. The display panel includes a color filter substrate. The color filter substrate includes a first substrate, a black matrix, a color filter layer, a transparent conductive layer, and a plurality of spacers. The black matrix and the color filter layer are disposed on the first substrate. The transparent conductive layer is disposed on the color filter layer and the black matrix, and has a plurality of openings located above the black matrix. The spacers are located on the transparent conductive layer and located on the black matrix. At least one of the openings is located between the adjacent spacers, and at least one of the spacers partially overlaps at least one of the openings.
Abstract:
A display panel comprises a first substrate, a second substrate and an organic planarization layer. The first substrate has an active area and a non-active area disposed adjacent to the active area. The second substrate is disposed opposite the first substrate. The organic planarization layer is disposed on the first substrate facing the second substrate and includes at least a first through portion which is disposed in the non-active area and exposes a film layer under the organic planarization layer.
Abstract:
A thin film transistor substrate includes: a substrate; a gate disposed on the substrate; a gate insulating layer disposed on the substrate and covering the gate; an active layer disposed on the gate insulating layer and above the gate, and the active layer has a first oxygen vacancy portion and a second oxygen vacancy portion; a source electrode and a drain electrode disposed on the active layer, the source electrode is connected to the first oxygen vacancy portion, and the drain electrode is connected to the second oxygen vacancy portion.
Abstract:
A display panel whose TFT substrate comprises a substrate, a gate layer, a gate dielectric layer, a semiconductor layer, a first electrode layer, a first passivation layer, a second passivation layer, a via and a second electrode layer is provided. The gate layer is disposed on the substrate. The gate dielectric layer is disposed on the gate layer. The semiconductor layer is disposed on the gate dielectric layer. The first electrode layer is disposed on the semiconductor layer. The first and second passivation layers are sequentially disposed on the first electrode layer. The via penetrates the passivation layers to expose the first electrode layer. The second electrode layer is electrically connected to the first electrode layer through the via. The first and second passivation layers have first and second taper angles respectively. The difference between the first and second taper angles is below 30°.
Abstract:
An embodiment of the invention provides a thin film transistor substrate includes: a substrate; a plurality of transistors on the substrate, wherein each of the transistors includes: a light-blocking layer on the substrate; an active layer on the light-blocking layer; a gate insulating layer on the substrate and covering the active layer; a gate electrode on the gate insulating layer and over the active layer; a source electrode on the substrate and electrically connected to the active layer; and a drain electrode on the substrate and electrically connected to the active layer.
Abstract:
An electronic device is provided. The electronic device includes a substrate, a first active layer, a second active layer, a first gate electrode, a first insulator, a second gate electrode, a second insulator, a first electrode electrically connected to the second active layer, and a second electrode. The first active layer is different from the second active layer in material. The first insulator is disposed between the first active layer and the first gate electrode. The second insulator is disposed between the second active layer and the second gate electrode. The second gate electrode is disposed between the first electrode and the second active layer. The second electrode is overlapped with at least part of the second active layer. The second electrode and the first gate electrode are the same in material.
Abstract:
An electronic device includes: a substrate including a through hole; a connecting element disposed in the through hole; a first insulating layer disposed on the substrate and including a first via; a first conductive element disposed on the first insulating layer and electrically connected to the connecting element through the first via; a second conductive element disposed under the substrate and electrically connected to the connecting element; and a semiconductor disposed between the substrate and the first insulating layer.
Abstract:
A display device is provided. The display device includes a substrate having a surface including a display area; a plurality of light-emitting diodes disposed on the display area of the substrate, wherein the light-emitting diode includes an electrode; and a plurality of bonding pads disposed on the substrate; a conductive element disposed between one of the plurality of bonding pads and the electrode of the at least one of the plurality of light-emitting diodes; and a first matrix element disposed on the substrate, wherein in a cross-sectional view, the first matrix element is disposed between adjacent two of the plurality of light-emitting diodes, and the electrode has a sidewall profile and at least a part of the sidewall profile of the electrode is in a shape of a curve.
Abstract:
An electronic device is provided. The electronic device includes a first substrate, a second substrate, a first transistor, a second transistor, a passivation layer, a conductive through hole, an electrode, and a shielding layer. The second substrate overlaps the first substrate. The first transistor is disposed on the first substrate. The second transistor is disposed on the second substrate. The passivation layer is disposed between the first substrate and the second substrate. The conductive through hole penetrates the passivation layer. The electrode is disposed between the first substrate and the second substrate and electrically connected to the first transistor through the conductive through hole. The shielding layer is disposed between the first transistor and the second transistor and overlaps the conductive through hole.