公开(公告)号：US10833384B2

公开(公告)日：2020-11-10

申请号：US16020401

申请日：2018-06-27

Applicant: International Business Machines Corporation

Inventor： Patryk Gumann ,  Salvatore Bernardo Olivadese ,  Robert Meinel ,  Christopher Surovic ,  Raymond A. Watters ,  Jerry M. Chow ,  Jay M. Gambetta ,  David C. Mckay

IPC: H01P1/22 ,  G06N10/00 ,  H01P5/02 ,  H01P11/00 ,  H03H11/24 ,  H03H7/24

Abstract: The technology described herein is directed towards microwave attenuators, and more particularly to a cryogenic microwave attenuator device for quantum technologies. In some embodiments, a device can comprise a cryogenic microwave attenuator device. The cryogenic microwave attenuator device can comprise: a housing component and a microwave attenuator chip, wherein the housing component can have thermal conductivity of about at least 0.1 Watts per meter-Kelvin at 1 degree Kelvin. The cryogenic microwave attenuator device can also comprise a microwave connector comprising a signal conductor that is direct wire coupled to the microwave attenuator chip.

公开(公告)号：US10784431B2

公开(公告)日：2020-09-22

申请号：US16173720

申请日：2018-10-29

Applicant: International Business Machines Corporation

Inventor： Patryk Gumann ,  Salvatore Bernardo Olivadese ,  Jerry M. Chow

IPC: H01L29/06 ,  H01L39/04 ,  H01L27/18 ,  H01L39/02 ,  G06N10/00 ,  H01L39/24

Abstract: A device includes a first substrate formed of a first material that exhibits a threshold level of thermal conductivity. The threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates. In an embodiment, the device also includes a second substrate disposed in a recess of the first substrate, the second substrate formed of a second material that exhibits a second threshold level of thermal conductivity. The second threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates. In an embodiment, at least one qubit is disposed on the second substrate. In an embodiment, the device also includes a transmission line configured to carry a microwave signal between the first substrate and the second substrate.

公开(公告)号：US20200280116A1

公开(公告)日：2020-09-03

申请号：US16880478

申请日：2020-05-21

Applicant: International Business Machines Corporation

Inventor： Salvatore B. Olivadese ,  Patryk Gumann ,  Jerry M. Chow

IPC: H01P3/08 ,  H01L23/66 ,  H01L39/02 ,  H01L39/24 ,  H01P11/00

Abstract: A microstrip that is usable in a quantum application (q-microstrip) includes a ground plane, a polyimide film disposed over the ground plane at a first surface of the polyimide film, and a conductor formed on a second side of the polyimide film such that the first surface is substantially opposite to the second surface. A material of the conductor provides greater than a threshold thermal conductivity (TH) with a structure of a dilution fridge stage (stage).

公开(公告)号：US10692795B2

公开(公告)日：2020-06-23

申请号：US16188466

申请日：2018-11-13

Applicant: International Business Machines Corporation

Inventor： Jae-Woong Nah ,  Hanhee Paik ,  Jerry M. Chow

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/367 ,  H01L39/22 ,  H01L23/544 ,  H01L23/00 ,  H01L39/04 ,  G06N10/00 ,  H01L23/498

Abstract: In an embodiment, a quantum device includes an interposer layer comprising a set of vias. In an embodiment, the quantum device includes a dielectric layer formed on a first side of the interposer, the dielectric layer including a set of transmission lines communicatively coupled to the set of vias. In an embodiment, the quantum device includes a plurality of qubit chips coupled to an opposite side of the interposer layer, each qubit chip of the plurality of qubit chips including: a plurality of qubits on a first side of the qubit chip and a plurality of protrusions on a second side of the qubit chip. In an embodiment, the quantum device includes a heat sink thermally coupled with the plurality of qubit chips, the heat sink comprising a plurality of recesses aligned with the plurality of protrusions of the plurality of qubit chips.

公开(公告)号：US20200161732A1

公开(公告)日：2020-05-21

申请号：US16751444

申请日：2020-01-24

Applicant: International Business Machines Corporation

Inventor： Salvatore Bernardo Olivadese ,  Patryk Gumann ,  Jay M. Gambetta ,  Jerry M. Chow

IPC: H01P1/22 ,  H01L39/00 ,  G06N10/00 ,  H01P1/30 ,  H01P11/00

Abstract: Techniques for facilitating reduced thermal resistance attenuator on high-thermal conductivity substrates for quantum applications are provided. A device can comprise a substrate that provides a thermal conductivity level that is more than a defined thermal conductivity level. The device can also comprise one or more grooved transmission lines formed in the substrate. The one or more grooved transmission lines can comprise a powder substance. Further, the device can comprise one or more copper heat sinks formed in the substrate. The one or more copper heat sinks can provide a ground connection. Further, the one or more copper heat sinks can be formed adjacent to the one or more grooved transmission lines.

公开(公告)号：US20200152540A1

公开(公告)日：2020-05-14

申请号：US16188466

申请日：2018-11-13

Applicant: International Business Machines Corporation

Inventor： Jae-Woong Nah ,  Hanhee Paik ,  Jerry M. Chow

IPC: H01L23/367 ,  H01L39/22 ,  H01L23/544 ,  H01L23/00 ,  H01L23/498 ,  H01L39/04 ,  G06N10/00

Abstract: In an embodiment, a quantum device includes an interposer layer comprising a set of vias. In an embodiment, the quantum device includes a dielectric layer formed on a first side of the interposer, the dielectric layer including a set of transmission lines communicatively coupled to the set of vias. In an embodiment, the quantum device includes a plurality of qubit chips coupled to an opposite side of the interposer layer, each qubit chip of the plurality of qubit chips including: a plurality of qubits on a first side of the qubit chip and a plurality of protrusions on a second side of the qubit chip. In an embodiment, the quantum device includes a heat sink thermally coupled with the plurality of qubit chips, the heat sink comprising a plurality of recesses aligned with the plurality of protrusions of the plurality of qubit chips.

公开(公告)号：US10599805B2

公开(公告)日：2020-03-24

申请号：US15828623

申请日：2017-12-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Dongbing Shao ,  Markus Brink ,  Salvatore B. Olivadese ,  Jerry M. Chow

IPC: G06F17/50 ,  G03F1/36 ,  G06N10/00

Abstract: Verifying a quantum circuit layout design is provided. A qubit layout is received as input. The qubit layout is generated from a qubit schematic. The qubit schematic includes a plurality of qubits, a plurality of coupling buses, a plurality of readout buses, and a plurality of readout ports. Design rules checking is performed on the qubit layout input, using a predefined set of design rule. The bus style/frequency and qubit information are extracted from the qubit layout input. A new qubit schematic is generated from the extracted bus style/frequency and qubit information. The qubit layout is verified based on the new qubit schematic being the same as the qubit schematic.

公开(公告)号：US20200083585A1

公开(公告)日：2020-03-12

申请号：US16125470

申请日：2018-09-07

Applicant: International Business Machines Corporation

Inventor： Salvatore B. Olivadese ,  Patryk Gumann ,  Jerry M. Chow

IPC: H01P3/08 ,  H01P11/00 ,  H01L23/66 ,  H01L39/02 ,  H01L39/24

Abstract: A microstrip that is usable in a quantum application (q-microstrip) includes a ground plane, a polyimide film disposed over the ground plane at a first surface of the polyimide film, and a conductor formed on a second side of the polyimide film such that the first surface is substantially opposite to the second surface. A material of the conductor provides greater than a threshold thermal conductivity (Tx) with a structure of a dilution fridge stage (stage). The stage is maintained at a cryogenic temperature, and the material of the conductor bonds at the cryogenic temperature with a second material of a part of a connector of a microwave line.

公开(公告)号：US20200083584A1

公开(公告)日：2020-03-12

申请号：US16124984

申请日：2018-09-07

Applicant: International Business Machines Corporation

Inventor： SALVATORE B. OLIVADESE ,  Patryk Gumann ,  Jerry M. Chow

IPC: H01P3/08 ,  H01P11/00

Abstract: A stripline that is usable in a quantum application (q-stripline) includes a first polyimide film and a second polyimide film. The q-stripline further includes a first center conductor and a second center conductor formed between the first polyimide film and the second polyimide film. The q-stripline has a first pin configured through a first recess in the second polyimide film to make electrical and thermal contact with the first center conductor.

公开(公告)号：US10573685B1

公开(公告)日：2020-02-25

申请号：US16054326

申请日：2018-08-03

Applicant: International Business Machines Corporation

Inventor： Vivekananda P. Adiga ,  Martin O. Sandberg ,  Jerry M. Chow ,  Hanhee Paik

IPC: H01L39/24 ,  H01L27/18 ,  H01L39/02 ,  G06N10/00

Abstract: Symmetrical qubits with reduced far-field radiation are provided. In one example, a qubit device includes a first group of superconducting capacitor pads positioned about a defined location of the qubit device, wherein the first group of superconducting capacitor pads comprise two or more superconducting capacitor pads having a first polarity, and a second group of superconducting capacitor pads positioned about the defined location of the qubit device in an alternating arrangement with the first group of superconducting capacitor pads, wherein the second group of superconducting capacitor pads comprise two or more superconducting capacitor pads having a second polarity that is opposite the first polarity.