Detecting and Isolating Domain Specific Faults
    83.
    发明申请
    Detecting and Isolating Domain Specific Faults 有权
    检测和隔离域特定故障

    公开(公告)号:US20090028054A1

    公开(公告)日:2009-01-29

    申请号:US11782906

    申请日:2007-07-25

    IPC分类号: G01R31/08

    CPC分类号: H04B3/46

    摘要: A method for detecting and isolating domain specific faults includes comparing a first media quality report for a communication from a first node with a second media quality report for the communication from a second node. The first node comprises an ingress node of a first domain for the communication and the second node comprises an egress node of the first domain for the communication. The method also includes determining that the difference between at least one aspect of the first media quality report and at least one corresponding aspect of the second media quality report exceeds a first threshold. The method further includes, upon determining that the difference exceeds the first threshold, determining a first path between the first node and the second node used by the communication. The method additionally includes isolating at least one source causing the difference between the first media quality report and the second media quality report.

    摘要翻译: 用于检测和隔离域特定故障的方法包括将来自第一节点的通信的第一媒体质量报告与用于来自第二节点的通信的第二媒体质量报告进行比较。 第一节点包括用于通信的第一域的入口节点,并且第二节点包括用于通信的第一域的出口节点。 该方法还包括确定第一媒体质量报告的至少一个方面与第二媒体质量报告的至少一个对应方面之间的差超过第一阈值。 该方法还包括:在确定差异超过第一阈值时,确定通信使用的第一节点和第二节点之间的第一路径。 该方法还包括隔离至少一个来源,导致第一媒体质量报告和第二媒体质量报告之间的差异。

    Method for manufacturing silicon carbide semiconductor device
    84.
    发明申请
    Method for manufacturing silicon carbide semiconductor device 有权
    碳化硅半导体器件的制造方法

    公开(公告)号:US20080153216A1

    公开(公告)日:2008-06-26

    申请号:US12071186

    申请日:2008-02-19

    IPC分类号: H01L21/82

    摘要: A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.

    摘要翻译: 碳化硅半导体器件的制造方法包括以下步骤:制备包括碳化硅衬底,漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。

    Auxiliary image display and manipulation on a computer display in a medical robotic system
    87.
    发明申请
    Auxiliary image display and manipulation on a computer display in a medical robotic system 审中-公开
    在医疗机器人系统中的计算机显示器上的辅助图像显示和操纵

    公开(公告)号:US20080033240A1

    公开(公告)日:2008-02-07

    申请号:US11583963

    申请日:2006-10-19

    IPC分类号: A61B1/045

    摘要: To assist a surgeon performing a medical procedure, auxiliary images generally indicating internal details of an anatomic structure being treated are displayed and manipulated by the surgeon on a computer display screen to supplement primary images generally of an external view of the anatomic structure. A master input device controlling a robotic arm in a first mode may be switched by the surgeon to a second mode in order to function instead as a mouse-like pointing device to facilitate the surgeon performing such auxiliary information display and manipulation.

    摘要翻译: 为了帮助外科医生执行医疗程序,通常由显示屏和外科医生在计算机显示屏幕上显示和操作通常指示正在治疗的解剖结构的内部细节的辅助图像,以补充大体上解剖结构的外部视图的主要图像。 控制第一模式中的机器人手臂的主输入装置可以由外科医生切换到第二模式,以便改为用作鼠标式指示装置,以便于外科医生执行这种辅助信息的显示和操作。