摘要:
A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant and a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is useful as an additive to a photoresist composition and as a protective coating material for immersion lithography. When processed by immersion lithography, the resist composition and protective coating composition exhibit good water repellency and water slip and produce few development defects.
摘要:
There is disclosed a resist protective film composition for forming a protective film on a photoresist film, comprising: at least a polymer including a repeating unit having one or more groups selected from a carboxyl group and α-trifluoromethyl alcohol groups; and an amine compound. There can be provided a resist protective film composition that makes it possible to provide more certainly rectangular and excellent patterns when a protective film is formed on a photoresist film.
摘要:
A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant and a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is useful as an additive to a photoresist composition and as a protective coating material for immersion lithography. When processed by immersion lithography, the resist composition and protective coating composition exhibit good water repellency and water slip and produce few development defects.
摘要:
A resist composition comprises a polymer which increases its alkali solubility under the action of an acid as a base resin, and a copolymer comprising recurring units containing a sulfonic acid amine salt and recurring units containing at least one fluorine atom as an additive. The composition is suited for immersion lithography.
摘要:
A resist composition comprises a base polymer which changes its alkali solubility under the action of an acid, and an additive copolymer comprising recurring units (a) and (b). R1 is F or CF3, R2 and R3 are H or alkyl or form a ring, R4 is H or an acid labile group, R5 to R6 are H, F, or alkyl, or two of R5 to R8 may together form a ring, m=0 or 1, 0.2≦a≦0.8, and 0.1≦b 0.6. A resist film of the composition has good barrier property against water so that leaching of the resist film with water is controlled, minimizing a change of pattern profile due to leach-out.
摘要翻译:抗蚀剂组合物包含在酸的作用下改变其碱溶解性的基础聚合物和包含重复单元(a)和(b)的添加剂共聚物。 R1是F或CF3,R2和R3是H或烷基或形成环,R4是H或酸不稳定基团,R5至R6是H,F或烷基,或R5至R8中的两个可以一起形成环, m = 0或1,0.2 <= a <= 0.8,0.1 <= b 0.6。 该组合物的抗蚀剂膜对水具有良好的阻隔性,从而控制抗蚀剂膜与水的浸出,从而最小化由于浸出而导致的图案轮廓的变化。
摘要:
To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetration during immersion lithography.
摘要:
A resist composition comprising an alkali-soluble polymer having lactone units incorporated therein as an additive forms a resist film which has on its surface a reduced contact angle after development and prevents water penetration during immersion lithography.
摘要:
In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from a resist overcoat material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble material is used as the resist overcoat material.
摘要:
Polymers comprising recurring units of cycloolefin having fluorinated alkyl introduced therein are novel and have transparency and alkali solubility. Using the polymers, resist compositions featuring low absorption of F2 excimer laser light are obtained.
摘要:
Polymers comprising recurring units of an acrylic derivative of fluorinated backbone represented by formula (1) are novel. R1, R2 and R3 are independently H, F, C1-20 alkyl or fluorinated C1-20 alkyl, at least one of R1, R2 and R3 contains fluorine, and R4 is an acid labile group. Using such polymers, resist compositions featuring low absorption of F2 excimer laser light are obtained.