Resist protective film composition and patterning process
    82.
    发明授权
    Resist protective film composition and patterning process 有权
    抗保护膜组成和图案化工艺

    公开(公告)号:US07759047B2

    公开(公告)日:2010-07-20

    申请号:US11798471

    申请日:2007-05-14

    摘要: There is disclosed a resist protective film composition for forming a protective film on a photoresist film, comprising: at least a polymer including a repeating unit having one or more groups selected from a carboxyl group and α-trifluoromethyl alcohol groups; and an amine compound. There can be provided a resist protective film composition that makes it possible to provide more certainly rectangular and excellent patterns when a protective film is formed on a photoresist film.

    摘要翻译: 公开了一种用于在光致抗蚀剂膜上形成保护膜的抗蚀保护膜组合物,其包括:至少包含具有一个或多个选自羧基和α-三氟甲醇基团的基团的重复单元的聚合物; 和胺化合物。 可以提供一种抗蚀剂保护膜组合物,当在光致抗蚀剂膜上形成保护膜时,可以提供更确定的矩形和优异的图案。

    RESIST COMPOSITION AND PATTERNING PROCESS
    85.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS 有权
    耐腐蚀组合物和方法

    公开(公告)号:US20090081588A1

    公开(公告)日:2009-03-26

    申请号:US12236359

    申请日:2008-09-23

    IPC分类号: G03F7/027 G03F7/20

    摘要: A resist composition comprises a base polymer which changes its alkali solubility under the action of an acid, and an additive copolymer comprising recurring units (a) and (b). R1 is F or CF3, R2 and R3 are H or alkyl or form a ring, R4 is H or an acid labile group, R5 to R6 are H, F, or alkyl, or two of R5 to R8 may together form a ring, m=0 or 1, 0.2≦a≦0.8, and 0.1≦b 0.6. A resist film of the composition has good barrier property against water so that leaching of the resist film with water is controlled, minimizing a change of pattern profile due to leach-out.

    摘要翻译: 抗蚀剂组合物包含在酸的作用下改变其碱溶解性的基础聚合物和包含重复单元(a)和(b)的添加剂共聚物。 R1是F或CF3,R2和R3是H或烷基或形成环,R4是H或酸不稳定基团,R5至R6是H,F或烷基,或R5至R8中的两个可以一起形成环, m = 0或1,0.2 <= a <= 0.8,0.1 <= b 0.6。 该组合物的抗蚀剂膜对水具有良好的阻隔性,从而控制抗蚀剂膜与水的浸出,从而最小化由于浸出而导致的图案轮廓的变化。

    Patterning process and resist overcoat material
    88.
    发明申请
    Patterning process and resist overcoat material 有权
    图案过程和抗大衣材料

    公开(公告)号:US20050233254A1

    公开(公告)日:2005-10-20

    申请号:US11105510

    申请日:2005-04-14

    IPC分类号: G03F7/11 G03F7/20 G03C1/492

    CPC分类号: G03F7/11 G03F7/2041

    摘要: In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from a resist overcoat material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble material is used as the resist overcoat material.

    摘要翻译: 在浸没式光刻工艺中,通过在晶片上形成光致抗蚀剂层形成图案,在抗蚀剂外涂层材料上在光致抗蚀剂层上形成保护涂层,将层结构暴露于水中并进行显影。 使用水不溶性碱溶性材料作为抗蚀剂外涂层材料。

    Polymers, chemical amplification resist compositions and patterning process
    90.
    发明授权
    Polymers, chemical amplification resist compositions and patterning process 有权
    聚合物,化学放大抗蚀剂组合物和图案化工艺

    公开(公告)号:US06730451B2

    公开(公告)日:2004-05-04

    申请号:US09735521

    申请日:2000-12-14

    IPC分类号: G03F7038

    摘要: Polymers comprising recurring units of an acrylic derivative of fluorinated backbone represented by formula (1) are novel. R1, R2 and R3 are independently H, F, C1-20 alkyl or fluorinated C1-20 alkyl, at least one of R1, R2 and R3 contains fluorine, and R4 is an acid labile group. Using such polymers, resist compositions featuring low absorption of F2 excimer laser light are obtained.

    摘要翻译: 包含由式(1)表示的氟化主链的丙烯酸衍生物的重复单元的聚合物是新颖的.R 1,R 2和R 3独立地是H,F,C 1-20烷基或氟化C 1-20烷基 ,R 1,R 2和R 3中的至少一个含有氟,R 4是酸不稳定基团。 使用这种聚合物,获得具有F2准分子激光的低吸收性的抗蚀剂组合物。