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18 条记录 (耗时 0.029 秒)

    Resist composition and patterning process
    3.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US07771914B2

    公开(公告)日：2010-08-10

    申请号：US11872952

    申请日：2007-10-16

    申请人： Jun Hatakeyama ,  Takao Yoshihara ,  Yuji Harada ,  Wataru Kusaki

    发明人： Jun Hatakeyama ,  Takao Yoshihara ,  Yuji Harada ,  Wataru Kusaki

    IPC分类号： G03F7/039 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  C08F220/10 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/143

    摘要： A resist composition comprises a polymer comprising recurring units having formula (1) wherein R1, R4, R7, and R14 are H or methyl, R2, R3, R15, and R16 are H, alkyl or fluoroalkyl, R is F or H, R5 is alkylene, R6 is fluorinated alkyl, R8 is a single bond or alkylene, R10 and R11 are H, F, methyl or trifluoromethyl, R12 and R13 are a single bond, —O— or —CR18R19—, R9, R18, and R19 are H, F, methyl or trifluoromethyl, R17 is alkylene, X1, X2 and X3 are —C(═O)—O—, —O—, or —C(═O)—R20—C(═O)—O— wherein R20 is alkylene, 0≦(a-1)

    摘要翻译： 抗蚀剂组合物包含含有式（1）的重复单元的聚合物，其中R 1，R 4，R 7和R 14为H或甲基，R 2，R 3，R 15和R 16为H，烷基或氟代烷基，R为F或H，R 5 是亚烷基，R6是氟化烷基，R8是单键或亚烷基，R10和R11是H，F，甲基或三氟甲基，R12和R13是单键，-O-或-CR18R19-，R9，R18和R19 是H，F，甲基或三氟甲基，R 17是亚烷基，X 1，X 2和X 3是-C（= O）-O-，-O-或-C（= O）-R 20 -C（= O）-O （a-1）+（a-2）+（a-1）+（a-2）+（a-2） （a-3）<1,0

    Patterning process and resist composition
    6.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号：US07741015B2

    公开(公告)日：2010-06-22

    申请号：US12029940

    申请日：2008-02-12

    申请人： Jun Hatakeyama ,  Takao Yoshihara ,  Takeshi Kinsho ,  Koji Hasegawa ,  Yoshio Kawai ,  Katsuya Takemura

    发明人： Jun Hatakeyama ,  Takao Yoshihara ,  Takeshi Kinsho ,  Koji Hasegawa ,  Yoshio Kawai ,  Katsuya Takemura

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0035 ,  G03F7/0397 ,  Y10S430/111 ,  Y10S430/12 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123

    摘要： A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.

    摘要翻译： 通过在基材上涂布含有包含含有7-氧代降冰片烷环的重复单元和含酸不稳定基团的重复单元的聚合物和酸产生剂的正性抗蚀剂组合物形成抗蚀剂膜，对抗蚀剂膜进行热处理和曝光来形成图案 用显影剂进行辐射，热处理和显影抗蚀剂膜，并使抗蚀剂膜在酸和/或热的帮助下交联和固化。 然后在第一抗蚀剂图案的空间区域中形成第二抗蚀剂图案。 双重图案化工艺将图案之间的间距缩小到一半。

    Patterning process
    9.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号：US08192921B2

    公开(公告)日：2012-06-05

    申请号：US12686836

    申请日：2010-01-13

    申请人： Jun Hatakeyama ,  Takao Yoshihara ,  Kazuhiro Katayama

    发明人： Jun Hatakeyama ,  Takao Yoshihara ,  Kazuhiro Katayama

    IPC分类号： G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40

    CPC分类号： G03F7/0397 ,  G03F1/26 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/40

    摘要： A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.

    摘要翻译： 通过将包含含有酸不稳定基团的重复单元和光致酸产生剂的树脂的化学放大正性抗蚀剂组合物涂布在基材上，干燥以形成抗蚀剂膜，将抗蚀剂膜暴露于通过相的高能量辐射而形成图案 具有晶格状移位器阵列PEB，显影以形成阳性图案，照亮或加热阳性图案以消除酸不稳定基团以增加碱溶性并引发交联以赋予耐溶剂性，涂覆反转膜，和 将阳性图案溶解在碱性湿蚀刻剂中，以通过正/负反转形成图案。

    PATTERNING PROCESS
    10.
    发明申请
    PATTERNING PROCESS 有权
    绘图过程

    公开(公告)号：US20100178618A1

    公开(公告)日：2010-07-15

    申请号：US12686836

    申请日：2010-01-13

    申请人： Jun Hatakeyama ,  Takao Yoshihara ,  Kazuhiro Katayama

    发明人： Jun Hatakeyama ,  Takao Yoshihara ,  Kazuhiro Katayama

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0397 ,  G03F1/26 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/40

    摘要： A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.

    摘要翻译： 通过将包含含有酸不稳定基团的重复单元和光致酸产生剂的树脂的化学放大正性抗蚀剂组合物涂布在基材上，干燥以形成抗蚀剂膜，将抗蚀剂膜暴露于通过相的高能量辐射而形成图案 具有晶格状移位器阵列PEB，显影以形成阳性图案，照亮或加热阳性图案以消除酸不稳定基团以增加碱溶性并引发交联以赋予耐溶剂性，涂覆反转膜，和 将阳性图案溶解在碱性湿蚀刻剂中，以通过正/负反转形成图案。