摘要:
A semiconductor device includes a gate insulating film formed on a semiconductor substrate, and a gate electrode formed on the gate insulating film. Nitrogen is introduced into the gate insulating film, and the nitrogen concentration distribution thereof has a peak near the surface of the gate insulating film or near the center of the gate insulating film in the thickness direction. The peak value of nitrogen concentration in the gate insulating film is equal to or greater than 10 atm % and less than or equal to 40 atm %.
摘要:
An improved optical fiber holder is provided, including: a tubular member (3) for fitting over an optical fiber bundle (1) consisting of a bundle of plural optical fibers (11) to prevent the optical fibers (11) from separating from each other; and a pressing structure (5) for exerting a pressing force on the optical fiber bundle (1) in a direction perpendicular to a longitudinal direction of the optical fiber bundle (1) to press the optical fiber bundle (1) against an inner periphery (3a) of the tubular member (3).
摘要:
A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the silicon germanium layer. Thereafter, a gate electrode is formed by patterning the silicon germanium layer and the upper silicon layer.
摘要:
An efficient lighting unit with improvements in ease of moving its head, reliability and the like is provided. The lighting unit includes: heads 6A and 6B defining illuminating apertures 6Aa and 6Ba, respectively, for directing light to an object W to be illuminated, the heads 6A and 6B being supported by a movable support member 1; LED light source devices 5A and 5B mounted at the movable support member 1 for emitting light when supplied with electric power from an electric power source 3 disposed separately from the movable support member 1 through an electric cable 4; and flexible optical fibers 7A and 7B for guiding light from the LED light source devices 5A and 5B to the respective illuminating apertures 6Aa and 6Ba of the heads 6A and 6B.
摘要:
A semiconductor device includes a gate insulating film formed on a silicon substrate, a gate electrode formed on the gate insulating film, and an electrical insulating film formed on the gate electrode. The electrical insulating film includes a N—H bond and substantially no Si—H bond. The electrical insulating film is formed by using tetrachlorosilane (SiCl4) that contains no hydrogen (H) as a source gas for a silicon nitride film. Thus, the semiconductor device can suppress residual hydrogen in the gate insulating film and prevent interface defects of the gate insulating film, a shift in the threshold voltage of a transistor, and the degradation of an on-state current. A method for manufacturing the semiconductor device also is provided.
摘要:
A small or size-reduced lighting apparatus for an inspection is disclosed. The lighting apparatus for an inspection comprises a lighting portion 3 having a large number of light emitters 2 provided circularly, and a guide member 5 including a large number of reflecting portions 6 for reflecting a part of lights emitted from the light emitters 2 and guiding the same light to an inspection object provided in a lower position, wherein the light for inspection which has been applied on and reflected by the inspection object can be fetched through the apertures among the reflecting portions.