公开(公告)号：US06639763B1

公开(公告)日：2003-10-28

申请号：US09663387

申请日：2000-09-15

申请人： Satoru Araki ,  Masashi Sano ,  Yoshihiro Tsuchiya

发明人： Satoru Araki ,  Masashi Sano ,  Yoshihiro Tsuchiya

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996

摘要： An object of the invention is to provide a magnetic transducer and a thin film magnetic head having resistance properties adaptable to ultra-high-density recording. An MR element, the magnetic transducer, has a stack including a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers. The stack has a first region and a second region into which the stack is divided in the direction of stacking thereof. The first and second regions of the stack differ from each other in the material or composition of the magnetic layers. The MR element has the above-described structure, thereby being capable of obtaining high resistance and a high rate of resistance change.

摘要翻译： 本发明的目的是提供一种具有适用于超高密度记录的电阻特性的磁换能器和薄膜磁头。 MR元件，磁换能器，具有堆叠，其包括与多个非磁性层交替堆叠的多个磁性层。 堆叠具有第一区域和第二区域，堆叠体沿其堆叠方向被分割成第一区域和第二区域。 堆叠的第一和第二区域在磁性层的材料或组成上彼此不同。 MR元件具有上述结构，从而能够获得高电阻和高电阻变化率。

公开(公告)号：US06636393B1

公开(公告)日：2003-10-21

申请号：US09425200

申请日：1999-10-22

申请人： Satoru Araki ,  Yoshihiro Tsuchiya ,  Masashi Sano

发明人： Satoru Araki ,  Yoshihiro Tsuchiya ,  Masashi Sano

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3268

摘要： A magnetic transducer and a thin film magnetic head capable of increasing a resistance change are provided. A spin valve film has a stacked structure comprising a soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the soft magnetic layer. The ferromagnetic layer includes an inner ferromagnetic layer, a coupling layer and an outer ferromagnetic layer. The inner ferromagnetic layer and the outer ferromagnetic layer are magnetically coupled to each other sandwiching the coupling layer, whereby the magnetizations oriented in opposite directions are generated. A ferromagnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the inner ferromagnetic layer is included in the inner ferromagnetic layer closest to the nonmagnetic layer in the ferromagnetic layer. When a current flows through the stack, the ferromagnetic interlayer reflects at least some electrons and limits a route for the electrons and thus a rate of resistance change is increased.

摘要翻译： 提供了能够增加电阻变化的磁换能器和薄膜磁头。 自旋阀膜具有堆叠结构，其包括顺序层叠在下层上的软磁性层，非磁性层，铁磁层，反铁磁层和保护层。 电阻根据铁磁层的磁化方向与软磁性层的磁化方向之间的相对角度而变化。 铁磁层包括内铁磁层，耦合层和外铁磁层。 内铁磁层和外铁磁层彼此磁耦合夹住耦合层，由此产生沿相反方向取向的磁化。 具有磁性的铁磁中间层和比内部铁磁层的电阻高的电阻包含在最接近铁磁层中的非磁性层的内部铁磁层中。 当电流流过堆叠时，铁磁层将反射至少一些电子并限制电子的路线，从而增加电阻变化率。

公开(公告)号：US06603642B1

公开(公告)日：2003-08-05

申请号：US09685891

申请日：2000-10-11

申请人： Satoru Araki ,  Koji Shimazawa

发明人： Satoru Araki ,  Koji Shimazawa

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/398 ,  G11B2005/3996

摘要： An object of the invention is to provide a magnetic transducer and a thin film magnetic head using the same, which can be manufactured by a simple manufacturing process and can obtain good output. The thin film magnetic head has a stack including a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers. A layer having the fixed orientation of magnetization is formed on at least one side of the stack in the direction of stacking. The layer has a stacked structure comprising an antiferromagnetic layer and an exchange coupling layer exchange coupling with the antiferromagnetic layer. The magnetic layers of the stack are changed into a single magnetic domain by a magnetic field generated by exchange coupling between the antiferromagnetic layer and the exchange coupling layer so as to prevent Barkhausen noise. Since the layer is formed on at least one side of the stack in the direction of stacking, a manufacturing process is simplified.

摘要翻译： 本发明的目的是提供一种使用其的磁换能器和薄膜磁头，其可以通过简单的制造过程制造并且可以获得良好的输出。 薄膜磁头具有堆叠，其包括与多个非磁性层交替堆叠的多个磁性层。 具有固定的磁化取向的层在层叠方向的至少一侧上形成。 该层具有包括反铁磁层和与反铁磁层交换耦合的交换耦合层的堆叠结构。 通过由反铁磁层和交换耦合层之间的交换耦合产生的磁场将堆叠的磁层变成单个磁畴，以防止巴克豪森噪声。 由于层在层叠方向的至少一侧上形成，因此简化了制造工序。

公开(公告)号：US06567247B1

公开(公告)日：2003-05-20

申请号：US09515327

申请日：2000-02-29

申请人： Satoru Araki ,  Yoshihiro Tsuchiya ,  Masashi Sano

发明人： Satoru Araki ,  Yoshihiro Tsuchiya ,  Masashi Sano

IPC分类号： G11B5127

CPC分类号： B82Y10/00 ,  G11B5/3903 ,  G11B5/3932

摘要： An improved output magnetoresistance effect type head having a spin valve type multilayered film which includes a non-magnetic metal layer, a ferromagnetic layer, a soft magnetic layer, and a pinning layer, where the soft magnetic bias assist layers formed on the soft magnetic layer changes its magnetization direction in an external magnetic field. Bias applying layers formed on these layers for applying a bias in a longitudinal direction of the soft magnetic layer are made of antiferromagnetic RuxMyMnz, where M is Rh, Pt, Pd, Au, Ag, Re, Ir and Cr, 1≦x≦30, 1≦y≦30, 69≦z≦90 and 10≦x+y≦31 and the unit of x, y, z is atomic %.

摘要翻译： 一种具有自旋阀型多层膜的改进的输出磁阻效应型头，其包括非磁性金属层，铁磁层，软磁层和钉扎层，其中形成在软磁层上的软磁偏置辅助层 在外部磁场中改变其磁化方向。 形成在这些层上的偏压施加层用于在软磁性层的纵向施加偏压，由反铁磁RuxMyMnz制成，其中M是Rh，Pt，Pd，Au，Ag，Re，Ir和Cr，1 <= x < = 30，1 <= y <= 30，69 <= z <= 90，10 <= x + y <= 31，x，y，z的单位为原子％。

公开(公告)号：US06483675B1

公开(公告)日：2002-11-19

申请号：US09538470

申请日：2000-03-30

申请人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

发明人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

IPC分类号： G11B582

CPC分类号： H01L43/08 ,  G11B5/3903 ,  Y10T428/24355

摘要： In a tunnel magnetoresistance effect element comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, three indexes representing a surface roughness state of the tunnel barrier layer are set such that Ra≦1 nm, Rmax≦10 nm and Rrms≦1.2 nm, wherein Ra is one of the three indexes and representing the center line average roughness, Rmax is one of the three indexes and representing the maximum height, and Rrms is one of the three indexes and representing the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.

摘要翻译： 在隧道磁阻效应元件中，包括具有隧道势垒层的隧道多层膜，铁磁自由层和铁磁性钉扎层，使得隧道势垒层保持在铁磁性自由层和铁磁性钉扎层之间，表示表面的三个指标 设置隧道阻挡层的粗糙度状态使得Ra <= 1nm，Rmax <= 10nm和Rrms <= 1.2nm，其中Ra是三个指标之一并且表示中心线平均粗糙度，Rmax是 三个指标，代表最大高度，Rrms是三个指标之一，代表标准差粗糙度。 因此，隧道磁阻效应元件表现出改善的特性，特别是大的磁头输出。

公开(公告)号：US06335081B1

公开(公告)日：2002-01-01

申请号：US09621088

申请日：2000-07-21

申请人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

发明人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/7325 ,  G11B5/8404 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268 ,  Y10S428/90 ,  Y10T428/1114 ,  Y10T428/1171 ,  Y10T428/24355

摘要： In a tunnel magnetoresistance effect element comprising a tunnel multilayered film on an under layer, the tunnel multilayered film has a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, wherein three indexes representing a surface roughness state of a surface, which faces the tunnel multilayered film, of the under layer are set such that Ra ≦0.5 nm, Rmax ≦5 nm and Rrms ≦0.55 nm, wherein Ra is one of the three indexes and represents the center line average roughness, Rmax is one of the three indexes and represents the maximum height, and Rrms is one of the three indexes and represents the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.

摘要翻译： 隧道磁阻效应元件包括在下层上的隧道多层膜，隧道多层膜具有隧道势垒层，铁磁自由层和铁磁性钉扎层，使隧道势垒层保持在铁磁自由层和 铁磁性钉扎层，其中表示下层的面向隧道多层膜的表面的表面粗糙度状态的三个指标被设置为使得Ra <= 0.5nm，Rmax <= 5nm和Rrms <= 0.55nm，其中 Ra是三个指标之一，代表中心线平均粗糙度，Rmax是三个指标之一，代表最大高度，Rrms是三个指标之一，代表标准偏差粗糙度。 因此，隧道磁阻效应元件表现出改善的特性，特别是大的磁头输出。

公开(公告)号：US06255814B1

公开(公告)日：2001-07-03

申请号：US09368672

申请日：1999-08-05

申请人： Koji Shimazawa ,  Satoru Araki

发明人： Koji Shimazawa ,  Satoru Araki

IPC分类号： G01R3302

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/455 ,  G11B2005/0008 ,  G11B2005/3996

摘要： A method for measuring bias magnetic field for controlling magnetic domain (longitudinal bias magnetic field) of a MR element has the step of applying an external measurement magnetic field onto the MR element which is biased with the magnetic field for controlling the magnetic domain (longitudinal bias magnetic field) in parallel to the direction of the bias magnetic field, the step of measuring &rgr;-H loop of the MR element (output resistance of MR element versus magnetic field strength loop) under the application of the external measurement magnetic field, and the step of determining a shifted amount of the measured &rgr;-H loop.

摘要翻译： 用于测量用于控制MR元件的磁畴（纵向偏置磁场）的偏置磁场的方法具有将外部测量磁场施加到MR元件上的步骤，所述MR元件被用于控制磁畴的磁场偏置（纵向偏置 磁场）平行于偏置磁场的方向，在外部测量磁场的应用下测量MR元件的rho-H环（MR元件的输出电阻与磁场强度回路）的步骤，以及 确定所测量的rho-H环的位移量的步骤。

公开(公告)号：US6090498A

公开(公告)日：2000-07-18

申请号：US950798

申请日：1997-10-15

申请人： Eiichi Omata ,  Satoru Araki ,  Masashi Sano ,  Yasuyuki Yamamoto

发明人： Eiichi Omata ,  Satoru Araki ,  Masashi Sano ,  Yasuyuki Yamamoto

IPC分类号： G11B5/39 ,  H01L43/08 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/3903 ,  Y10S428/90 ,  Y10T428/1121

摘要： In a magnetoresistance effect element, a pinning layer (antiferromagnetic layer) has a composition of Ru--Mn or Ru--M--Mn where M represents at least one selected from Rh, Pt, Pd, Au, Ag, and Re, and impurity concentrations of the pinning layer are regulated. Accordingly, there can be provided the magnetoresistance effect element having a magnetic multilayered film which is excellent in corrosion resistance, thermal stability and magnetic field sensitivity and has a large MR change ratio, as well as a magnetoresistance device, such as a magnetoresistance effect type head or the like, using such a magnetoresistance effect element.

摘要翻译： 在磁阻效应元件中，钉扎层（反铁磁层）具有Ru-Mn或Ru-M-Mn的组成，其中M表示选自Rh，Pt，Pd，Au，Ag和Re中的至少一种，杂质浓度 的钉扎层被调节。 因此，可以提供具有耐腐蚀性，热稳定性和磁场灵敏度优异，MR变化率大的磁性多层膜的磁电阻效应元件，以及诸如磁阻效应型磁头的磁阻效应元件 使用这种磁阻效应元件。

公开(公告)号：US6074743A

公开(公告)日：2000-06-13

申请号：US118363

申请日：1998-07-17

申请人： Satoru Araki ,  Daisuke Miyauchi

发明人： Satoru Araki ,  Daisuke Miyauchi

IPC分类号： G11B5/39 ,  G11B5/667 ,  H01F10/32 ,  H01L43/10 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3268 ,  H01L43/10 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/26 ,  Y10T428/265

摘要： A magnetoresistance effect element according to the present invention comprises magnetic multilayer film having a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and a pinning layer which is formed on the ferromagnetic layer to pin a direction of magnetization of the ferromagnetic layer, wherein the ferromagnetic layer and the pinning layer are coupled to each other with epitaxial growth.Accordingly, the magnetoresistance device using the magnetoresistance effect element as described above exhibits an extremely large MR ratio and a linear rise-up characteristic of MR change in an extremely small range of applied magnetic field of about -10 to 10 Oe, and has high sensitivity to magnetic field, a large MR slope under a high-frequency magnetic field and an excellent heat resistance.

摘要翻译： 根据本发明的磁阻效应元件包括具有非磁性金属层的磁性多层膜，形成在非磁性金属层的一个表面上的铁磁层，形成在非磁性金属层的另一个表面上的软磁性层 金属层和钉扎层，其形成在铁磁层上以固定铁磁层的磁化方向，其中铁磁层和钉扎层通过外延生长彼此耦合。 因此，使用如上所述的磁阻效应元件的磁阻器件在大约-10至10Oe的施加磁场的极小范围内具有非常大的MR比和MR变化的线性上升特性，并且具有高灵敏度 到磁场，在高频磁场下具有大的MR斜率，并且具有优异的耐热性。

公开(公告)号：US5923504A

公开(公告)日：1999-07-13

申请号：US817098

申请日：1997-04-18

申请人： Satoru Araki ,  Yuichi Sato ,  Osamu Shinoura

发明人： Satoru Araki ,  Yuichi Sato ,  Osamu Shinoura

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3925 ,  G11B5/399 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/39 ,  G11B5/3932

摘要： According to the present invention on a magnetoresistance device having a magnetoresistance effect element, since iron oxide FeO.sub.x exhibiting antiferromagnetism is used as a pinning layer, a spin-valve type magnetoresistance effect element can be obtained which is particularly excellent in corrosion resistance and has a magnetoresistance ratio with an MR slope no less than 0.7% Oe in the region of the high-frequency magnetic field of 1 MHz. Further, the rise-up characteristic of an MR curve at the zero magnetic field is extremely excellent with small hysteresis, and it has high heat resistance. The heat resistance is further improved by interposing an oxygen blocking layer between the pinning layer and a ferromagnetic layer. In the magnetoresistance device, for example, an MR head, using the magnetoresistance effect element having a magnetic multilayer film, an output voltage is approximately five times as high as that of the conventional material. Accordingly, there can be provided an excellent MR head which has extremely high reliability and enables the reading for ultrahigh density magnetic recording exceeding 1 Gbit/inch.sup.2.

摘要翻译： PCT No.PCT / JP96 / 02702 Sec。 371日期1997年4月18日 102（e）1997年4月18日PCT PCT 1996年9月19日PCT公布。 第WO97 / 11499号公报 日期1997年3月27日根据本发明，对具有磁阻效应元件的磁阻器件，由于使用具有反铁磁性的氧化铁FeOx作为钉扎层，因此可获得特别优异的自旋阀型磁电阻效应元件 并且在1MHz的高频磁场的区域中具有MR斜率不小于0.7％Oe的磁阻比。 此外，在零磁场下，MR曲线的上升特性非常优异，滞后小，耐热性高。 通过在钉扎层和铁磁层之间插入氧阻挡层来进一步提高耐热性。 在磁电阻器件中，例如，使用具有磁性多层膜的磁阻效应元件的MR磁头，输出电压大约是常规材料的5倍。 因此，可以提供极高的可靠性的极好的MR磁头，并能够读取超过1Gbit / inch2的超高密度磁记录。