公开(公告)号：US5923504A

公开(公告)日：1999-07-13

申请号：US817098

申请日：1997-04-18

申请人： Satoru Araki ,  Yuichi Sato ,  Osamu Shinoura

发明人： Satoru Araki ,  Yuichi Sato ,  Osamu Shinoura

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3925 ,  G11B5/399 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/39 ,  G11B5/3932

摘要： According to the present invention on a magnetoresistance device having a magnetoresistance effect element, since iron oxide FeO.sub.x exhibiting antiferromagnetism is used as a pinning layer, a spin-valve type magnetoresistance effect element can be obtained which is particularly excellent in corrosion resistance and has a magnetoresistance ratio with an MR slope no less than 0.7% Oe in the region of the high-frequency magnetic field of 1 MHz. Further, the rise-up characteristic of an MR curve at the zero magnetic field is extremely excellent with small hysteresis, and it has high heat resistance. The heat resistance is further improved by interposing an oxygen blocking layer between the pinning layer and a ferromagnetic layer. In the magnetoresistance device, for example, an MR head, using the magnetoresistance effect element having a magnetic multilayer film, an output voltage is approximately five times as high as that of the conventional material. Accordingly, there can be provided an excellent MR head which has extremely high reliability and enables the reading for ultrahigh density magnetic recording exceeding 1 Gbit/inch.sup.2.

摘要翻译： PCT No.PCT / JP96 / 02702 Sec。 371日期1997年4月18日 102（e）1997年4月18日PCT PCT 1996年9月19日PCT公布。 第WO97 / 11499号公报 日期1997年3月27日根据本发明，对具有磁阻效应元件的磁阻器件，由于使用具有反铁磁性的氧化铁FeOx作为钉扎层，因此可获得特别优异的自旋阀型磁电阻效应元件 并且在1MHz的高频磁场的区域中具有MR斜率不小于0.7％Oe的磁阻比。 此外，在零磁场下，MR曲线的上升特性非常优异，滞后小，耐热性高。 通过在钉扎层和铁磁层之间插入氧阻挡层来进一步提高耐热性。 在磁电阻器件中，例如，使用具有磁性多层膜的磁阻效应元件的MR磁头，输出电压大约是常规材料的5倍。 因此，可以提供极高的可靠性的极好的MR磁头，并能够读取超过1Gbit / inch2的超高密度磁记录。

公开(公告)号：US06184680B2

公开(公告)日：2001-02-06

申请号：US09013638

申请日：1998-01-26

申请人： Osamu Shinoura ,  Hideyuki Suzuki ,  Yuichi Sato

发明人： Osamu Shinoura ,  Hideyuki Suzuki ,  Yuichi Sato

IPC分类号： G01R3309

CPC分类号： G01D5/142 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/093 ,  Y10S428/90

摘要： A magnetic field sensor in which a magnetic film or films having a magnetoresistance effect for detecting a magnetic field and a conductor electrode film for applying a current to the magnetic film are deposited on a flexible substrate. Therefore, the magnetic field sensor deposited on the flexible substrate can be bent as desired. The magnetic film or films can be deposited on one face of the flexible substrate made of resin that is 5 to 300 &mgr;m thick while the other substrate face on the opposite side of the flexible substrate can be brought adjacent to a body inducing a change in a magnetic field that is undergoing detection. be deformed.

摘要翻译： 一种磁场传感器，其中磁性膜或具有用于检测磁场的磁阻效应的膜和用于向磁性膜施加电流的导体电极膜沉积在柔性基板上。 因此，可以根据需要将沉积在柔性基板上的磁场传感器弯曲。 可以将磁性膜或膜沉积在由树脂制成的柔性基板的一个表面上，其厚度为5至300μm，而柔性基板的相对侧上的另一个基板面可以与导致其中的变化的主体相邻 正在进行检测的磁场。 变形

公开(公告)号：US20220110934A1

公开(公告)日：2022-04-14

申请号：US17645509

申请日：2021-12-22

申请人： Takashi SATO ,  Takeshi Shimosato ,  Tatsuru Moritani ,  Tadahiko Morinaga ,  Yuichi Sato ,  Akihiro Kotsugai

发明人： Takashi SATO ,  Takeshi Shimosato ,  Tatsuru Moritani ,  Tadahiko Morinaga ,  Yuichi Sato ,  Akihiro Kotsugai

IPC分类号： A61K31/496 ,  A61K9/16

摘要： A pharmaceutical composition including particles each containing a water-soluble base material and a poorly water-soluble compound, the water-soluble base material containing a rapidly water-soluble compound, wherein the poorly water-soluble compound is a kinase inhibitor and exists in an amorphous state in the water-soluble base material.

公开(公告)号：US08927982B2

公开(公告)日：2015-01-06

申请号：US13415080

申请日：2012-03-08

申请人： Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

发明人： Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

IPC分类号： H01L29/12 ,  H01L29/786

CPC分类号： H01L29/78618 ,  G02F1/136204 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/0259 ,  H01L21/265 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

摘要翻译： 通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 在使用有源层的氧化物半导体膜的晶体管中，在与沟道区相邻的源极区域和漏极区域中设置有微孔。 通过在形成于氧化物半导体膜中的源极区域和漏极区域内设置微孔，氧化物半导体膜的沟道区域中所含的氢能够被捕获在微孔中。

公开(公告)号：US08859330B2

公开(公告)日：2014-10-14

申请号：US13419468

申请日：2012-03-14

申请人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato

发明人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato

IPC分类号： H01L21/00 ,  H01L21/425 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L21/425 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.

摘要翻译： 提供了包括具有稳定的电特性和高可靠性的氧化物半导体的半导体器件。 在制造包括氧化物半导体膜的晶体管的方法中，执行将稀有气体离子注入到氧化物半导体膜中的注入步骤，并且将减少稀有气体离子的氧化物半导体膜在减小的温度下进行加热步骤 压力，在氮气气氛中或在稀有气体气氛中，由此释放在其中植入稀有气体离子的氧化物半导体膜中所含的氢或水; 因此，氧化物半导体膜被高度纯化。

公开(公告)号：US08716073B2

公开(公告)日：2014-05-06

申请号：US13547451

申请日：2012-07-12

申请人： Shunpei Yamazaki ,  Shinji Ohno ,  Yuichi Sato ,  Junichi Koezuka ,  Sachiaki Tezuka

发明人： Shunpei Yamazaki ,  Shinji Ohno ,  Yuichi Sato ,  Junichi Koezuka ,  Sachiaki Tezuka

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225

摘要： To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

摘要翻译： 提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。 提供可以高速执行的包括氧化物半导体膜的晶体管。 提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。 在氧化物半导体膜上形成具有还原性的膜。 接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。 接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

公开(公告)号：US08637163B2

公开(公告)日：2014-01-28

申请号：US12309391

申请日：2007-07-19

申请人： Kohei Tokuda ,  Koichi Nose ,  Yuichi Sato ,  Makoto Nakazawa

发明人： Kohei Tokuda ,  Koichi Nose ,  Yuichi Sato ,  Makoto Nakazawa

IPC分类号： B32B15/00 ,  B32B15/18 ,  C22C18/00

CPC分类号： C23C30/00 ,  C22C1/002 ,  C22C18/00 ,  C22C21/06 ,  C22C21/12 ,  C22C45/00 ,  C22C45/001 ,  C22C45/005 ,  C22C45/08 ,  C23C2/04 ,  C23C2/06 ,  C23C2/12 ,  C23C4/123 ,  Y10T428/12493 ,  Y10T428/12799

摘要： An alloy with a high glass forming ability characterized by containing a group of elements A with atomic radii of less than 0.145 nm of a total of 20 to 85 atm %, a group of elements B with atomic radii of 0.145 nm to less than 0.17 nm of a total of 10 to 79.7 atm %, and a group of elements C with atomic radii of 0.17 nm or more of a total of 0.3 to 15 atm %; when the elements with the greatest contents in the group of elements A, group of elements B, and group of elements C are respectively designated as the “element a”, “element b”, and “element c”, by the ratio of the content of the element a in the group of elements A (for example, Zn and/or Al), the ratio of the content of the element b in the group of elements B (for example, Mg), and the ratio of the content of the element c in the group of elements C (for example, Ca) all being 70 atm % or more; and by the liquid forming enthalpy between any two elements selected from the element a, element b, and element c being negative.

摘要翻译： 具有高玻璃形成能力的合金，其特征在于含有一组元素A，原子半径小于0.145nm，总数为20至85atm％的元素A，原子半径为0.145nm至小于0.17nm的元素B 总计为10〜79.7atm％，原子半径为0.17nm以上的元素C为0.3〜15atm％的组合; 当元素A，元素组B和元素C组中具有最大含量的元素分别被指定为“元素a”，“元素b”和“元素c”时，以 元素A（例如Zn和/或Al）中的元素a的含量，元素B的元素B的含量（例如Mg）的含量与含量的比例 元素C（例如Ca）中的元素c全部为70atm％以上; 并且通过在从元件a，元件b和元件c中选择的任何两个元件之间的液体形成焓是负的。

公开(公告)号：US08418277B2

公开(公告)日：2013-04-16

申请号：US12438965

申请日：2007-08-29

申请人： Mayu Okubo ,  Yoshikazu Ushijima ,  Yuichi Sato ,  Yoshinobu Kato ,  Ryosuke Hayashi ,  Ayako Harada

发明人： Mayu Okubo ,  Yoshikazu Ushijima ,  Yuichi Sato ,  Yoshinobu Kato ,  Ryosuke Hayashi ,  Ayako Harada

IPC分类号： E03D11/00

CPC分类号： E03D5/01 ,  E03D5/10 ,  E03D2201/30

摘要： A flush toilet in which an appropriate amount of water is supplied and that can be installed in an area where water pressure is low. The flush toilet is flushed with pressurized flush water and has a flush toilet body having a bowl and a drain trap pipe path; a pressurizing pump for pressurizing flush water to be jetted out; a water storage tank for storing flush water to be pressurized; flush control means for causing rim water discharge to be performed for a predetermined rim water discharge time by water supply pressure of running water and also causing jet water discharge to be made to flush the bowl; flush water replenishing means for replenishing, after the bowl is flushed, flush water to the water storage tank from the running water to thereby return the amount of flush water stored in the water storage tank to a specified level; timing means for measuring a water replenishing time after the flush water replenishing is started until the amount of flush water stored in the water storage tank return to the specified level; and water discharge time regulation means for regulating the rim water discharge time based on the water replenishing time.

摘要翻译： 一种冲水马桶，其中供应适量的水，并且可以安装在水压较低的区域。 冲水马桶用加压冲洗水冲洗，并具有带有碗和排水管道通道的抽水马桶主体; 用于对冲洗水进行加压以加压的加压泵; 用于储存冲洗水以加压的储水箱; 冲洗控制装置，用于通过自来水的供水压力使预定的轮辋排水时间进行轮辋排水，并且还引起喷射水排出以冲洗碗; 冲洗水补充装置，在碗被冲洗后，从自来水冲洗水到储水箱，从而将存储在储水箱中的冲洗水量返回到指定水平; 定时装置，用于在开始冲洗水补充之后测量补水时间，直到储存在储水箱中的冲洗水量达到指定水平; 和排水时间调节装置，用于根据补水时间调节轮辋排水时间。

公开(公告)号：US20120228544A1

公开(公告)日：2012-09-13

申请号：US13513051

申请日：2010-12-02

申请人： Atsushi Ito ,  Yasuhiko Ohsawa ,  Yuichi Sato

发明人： Atsushi Ito ,  Yasuhiko Ohsawa ,  Yuichi Sato

IPC分类号： H01M4/525

CPC分类号： H01M4/525 ,  H01M4/505

摘要： [Problems to be Solved] Provided is a positive electrode material for an electrical device, which has high capacity and improved initial charge-discharge efficiency.[Means for Solving the Problem] Disclosed is a positive electrode material for an electrical device, which is represented by the formula (1): aLi[Li1/3Mn2/3]O2.(1−a)Li[NixCoyMn1-x-y]O2  (1) (wherein, 0

摘要翻译： [待解决的问题]提供一种具有高容量，提高初期充放电效率的电气装置用正极材料。 解决问题的手段公开了由式（1）表示的电气装置用正极材料：aLi [Li1 / 3Mn2 / 3] O2。（1-a）Li [NixCoyMn1-xy] O2 （1）（其中0

公开(公告)号：US20120196062A1

公开(公告)日：2012-08-02

申请号：US13388643

申请日：2010-08-05

申请人： Yuichi Sato ,  Noboru Tanaka ,  Minoru Nakayama

发明人： Yuichi Sato ,  Noboru Tanaka ,  Minoru Nakayama

IPC分类号： B32B27/00 ,  B05D3/06 ,  B32B27/02 ,  D02G3/36 ,  C23C28/00 ,  D02G3/22 ,  B32B1/08 ,  B32B1/02 ,  B32B5/02 ,  B05D5/12 ,  B32B3/30

CPC分类号： F03G7/005 ,  Y10T428/1334 ,  Y10T428/1393 ,  Y10T428/24521 ,  Y10T428/2924 ,  Y10T428/2933 ,  Y10T428/2967 ,  Y10T442/10 ,  Y10T442/20

摘要： Provided are: a conducting polymer composite structure, which does not require any separator between electrodes, can be reduced in size, can be produced at reduced cost and with improved workability, and has excellent impact resistance; a process for producing the conducting polymer composite structure; and an actuator element using the conducting polymer composite structure. The conducting polymer composite structure includes at least one conducting polymer layer, and is a structure in which a surface layer of the conducting polymer layer is an insulating layer.

摘要翻译： 提供：不需要电极之间的任何隔膜的导电聚合物复合结构可以减小尺寸，可以以降低的成本和改善的可加工性生产，并且具有优异的耐冲击性; 一种制备导电聚合物复合结构的方法; 以及使用导电聚合物复合结构的致动器元件。 导电聚合物复合结构包括至少一个导电聚合物层，并且是其中导电聚合物层的表面层是绝缘层的结构。