摘要:
Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
摘要:
A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.
摘要:
A lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100° C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair of leads, a lamp base configured to receive the pair of leads, a sleeve having a wall thickness of at least about 0.013 inches and a potting compound having a thermal conductivity greater than about 100 W/(K-m).
摘要:
A lamp assembly for a substrate processing chamber is described. The lamp assembly comprises a tubular body having first and second ends, a lamp element at least partially seated in the first end having a filament and first electrical connectors, transmission wires attached to the first electrical connectors, and a rigid plug flexibly positioned relative to the second end of the tubular body having second electrical connectors attached to the transmission wires. The flexibly positioned rigid plug is generally capable of a range movement in directions both perpendicular and parallel to a longitudinal axis of the tubular body. In one version, the rigid plug comprises first and second plug elements.
摘要:
Apparatus for thermally processing a semiconductor wafer includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.
摘要:
A substrate support ring has a band having an inner perimeter that at least partially surrounds a periphery of the substrate. The band has a radiation absorption surface. A lip extends radially inwardly from the inner perimeter of the band to support the substrate. The band and lip can be formed from silicon carbide, and the radiation absorption surface can be an oxidized layer of silicon carbide. In one version, the band and lip have a combined thermal mass Tm, and the radiation absorption surface has an absorptivity A and a surface area Sa, such that the ratio (A×Sa)/Tm is from about 4×10−5 m2K/J to about 9×10−4 m2K/J.
摘要:
A semiconductor processing system includes a process chamber and an assembly of radiant energy sources. The radiant energy assembly is filled with a thermally conductive gas to cool the radiant energy sources.
摘要:
A molded lamp base receives a press seal of a lamp. Internal walls of the base define a cavity open at one end to receive the press seal portion of the lamp. The side walls have a thickness dimension and a width dimension substantially conforming to the peripheral dimensions of the press seal portion. At least one raised bead extends inwardly from the cavity side wall and is dimensioned for a friction fit with the periphery of the lamp to hold the lamp securely in base. In one embodiment, the beads are located in semi-circular recesses disposed about the exhaust tube portion of the lamp while in another embodiment, the beads are spaced outwardly therefrom.
摘要:
An inlead for an electric lamp formed of an alloy of tungsten and molybdenum. The inlead has a rate of thermal expansion or contraction approximating that of the glass forming the bulb. This minimizes the expansion/contraction mis-match stress between the two materials. In addition, the alloy composition functions to reduce oxidation and degradation of the lead.