公开(公告)号：US20150212953A1

公开(公告)日：2015-07-30

申请号：US14683080

申请日：2015-04-09

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Amir Amirkhany ,  Suresh Rajan ,  Mohammad Hekmat ,  Dinesh Patil

IPC: G06F13/16 ,  G11C7/10 ,  G11C5/02

CPC classification number: G06F13/1673 ,  G06F13/4068 ,  G11C5/02 ,  G11C7/10 ,  G11C7/1012 ,  G11C7/1021 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1072 ,  G11C7/1087 ,  G11C7/1093 ,  G11C7/222 ,  G11C8/18 ,  G11C11/4076 ,  G11C11/4093 ,  G11C11/4096 ,  G11C11/419 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract translation: 半导体存储器系统包括第一半导体存储器管芯和第二半导体存储器管芯。 第一半导体存储器管芯包括主数据接口，用于在写操作期间接收输入数据流，并将输入数据流反序列化为第一多个数据流，并且还包括耦合到主数据接口的辅数据接口， 发送第一多个数据流。 第二半导体存储器管芯包括耦合到第一半导体存储器管芯的次级数据接口的次级数据接口，以接收第一多个数据流。

公开(公告)号：US20150138895A1

公开(公告)日：2015-05-21

申请号：US14578078

申请日：2014-12-19

Applicant: RAMBUS INC.

Inventor： Frederick A. Ware ,  Suresh Rajan ,  Scott C. Best

IPC: G11C11/4093 ,  G11C11/408

CPC classification number: G11C11/4082 ,  G06F12/06 ,  G06F13/1673 ,  G06F13/1684 ,  G11C5/04 ,  G11C7/1051 ,  G11C7/1078 ,  G11C7/22 ,  G11C11/4076 ,  G11C11/4093

Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.

Abstract translation: 本文描述的实施例描述了在不同操作模式下使用存储器模块的技术，例如在标准多点模式或动态点对点（DPP）模式（此处也称为增强模式）中， 。 内存模块也可以以不同的配置插入存储系统的插座。

公开(公告)号：US20150103479A1

公开(公告)日：2015-04-16

申请号：US14515380

申请日：2014-10-15

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Suresh Rajan

IPC: G11C11/4093 ,  G06F15/78 ,  G11C11/408 ,  H05K1/18

CPC classification number: H05K1/11 ,  G06F1/184 ,  G06F13/1694 ,  G06F13/4068 ,  G06F15/7803 ,  G11C5/04 ,  G11C5/06 ,  G11C7/10 ,  G11C11/4082 ,  G11C11/4093 ,  H05K1/181 ,  H05K2201/10159 ,  H05K2201/10189

Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory system includes a motherboard substrate with multiple module sockets, at least one of which is populated with a memory module. A first set of data lines is disposed on the motherboard substrate and coupled to the module sockets. The first set of data lines includes a first subset of point-to-point data lines coupled between a memory controller and a first socket and a second subset of point-to-point data lines coupled between the memory controller and a second socket. A second set of data lines is disposed on the motherboard substrate and coupled between the first socket and the second socket. The first and second sets of data lines can make up a memory channel.

Abstract translation: 这里描述的实施例描述了用于存储器系统的技术。 存储器系统的一个实施方式包括具有多个模块插槽的母板衬底，其中至少一个衬垫具有存储器模块。 第一组数据线设置在母板基板上并耦合到模块插槽。 第一组数据线包括耦合在存储器控制器和第一插座之间的点对点数据线的第一子集，以及耦合在存储器控制器和第二插座之间的点到点数据线的第二子集。 第二组数据线被布置在母板基板上并且耦合在第一插座和第二插座之间。 第一组数据线和第二组数据线可以组成一个存储器通道。