摘要:
Disclosed are compounds of the formula: wherein the formula variables are as defined herein. The compounds of this invention are non-peptide, reversible inhibitors of type 2 methionine aminopeptidase. Also disclosed is the use of such compounds in treating conditions mediated by angiogenesis, such as cancer, haemangioma, proliferative retinopathy, rheumatoid arthritis, atherosclerotic neovascularization, psoriasis, ocular neovascularization and obesity.
摘要:
Disclosed are compounds which are non-peptide, reversible inhibitors of type 2 methionine aminopeptidase, useful in treating conditions mediated by angiogenesis, such as cancer, haemangioma, proliferative retinopathy, rheumatoid arthritis, atherosclerotic neovascularization, psoriasis, ocular neovascularization and obesity.
摘要:
A water-in-fuel abuse detection system provides a way to determine if a vehicle operator has ignored a conventional water-in-fuel indicator light and continued to operate the vehicle beyond a certain threshold. The system includes a sensor positioned in a fuel filter capable of separating an amount of water from a source of fuel. The sensor is operatively connected to a software routine, as well as to a conventional indicator light that illuminates to alert a vehicle operator that water must be purged from the fuel filtration system. The software routine determines the duration, in distance traversed or time elapsed, that the amount of water is at or above the level of the sensor. The routine then writes a fault code to permanent memory when the threshold is exceeded. A diagnostic tool can access the permanent memory and reveal whether the fuel system has be the subject of water-in-fuel abuse.
摘要:
A dual gate transistor device and method for fabricating the same. First, a doped substrate is prepared with a patterned oxide layer on the doped substrate defining a channel. Next, a silicon layer is deposited to form the channel, with a gate oxide layer then grown adjacent the channel. Subsequently, a plurality of gate electrodes are formed next to the gate oxide layer and a drain is formed on the channel. After the drain is formed, an ILD layer is deposited. This ILD layer is etched to form a source region contact, a drain region contact, a first gate electrode contact, and a second gate electrode contact.
摘要:
A dual gate transistor device and method for fabricating the same. First, a doped substrate is prepared with a patterned oxide layer on the doped substrate defining a channel. Next, a silicon layer is deposited to form the channel, with a gate oxide layer then grown adjacent the channel. Subsequently, a plurality of gate electrodes are formed next to the gate oxide layer and a drain is formed on the channel. After the drain is formed, an ILD layer sited. This ILD layer is etched to form a source region contact, a drain region contact, a first gate electrode contact, and a second gate electrode contact.
摘要:
A system for simulating the operation of a vehicle, comprising a monitor for displaying a sequence of visual images; a plurality of control devices for the simulated vehicle for manipulation by an operator of the simulated vehicle; a computer, responsive to manipulation of the simulated vehicle control devices, for presenting a temporal sequence of visual images to the operator on the monitor which depicts the operation of the simulated vehicle along a roadway in a simulated environment; a mechanism for dynamically controlling weather effects in the simulated environment; and a mechanism for creating a traffic event in the simulated environment on demand during a simulation session and presenting the traffic event to the operator substantially immediately thereafter.
摘要:
A computer program displaying a plurality of panels on the display of a computer system. Each panel contains one or more sets of tools, commands, and information displays that can be used to modify the contents of a window or document within the computer system. The panels can be docked by dragging a first panel and dropping it in proximity with a second panel while holding down a modifier key. When the panels are docked, a docking wedge is created between the panels. Docked panels can be moved as if the panels were a single panel. In addition, docked panels can be reduced in size by pressing a minimize button on any one of the docked panels. Panels can be undocked by either pressing the docking wedge or dragging a panel while holding down a modifier key. In response to either method of undocking, the docking wedge is removed and the panels become separate.