Abstract:
Devices, systems, and methods of communicating information directly to a sequencer or a buffer in a memory device are provided. In some embodiments, instructions are sent directly from an external processor to a sequencer in the memory device, and the sequencer configures the instructions for an internal processor, such as one or more arithmetic logic units (ALUs) embedded on the memory device. Further, data to be operated on by the internal processor can be sent directly from the external processor to a buffer, and the sequencer can copy the data from the buffer to the internal processor. As power can be consumed each time a memory array is written to or read from, the direct communication of instructions and/or data can reduce the power consumed in writing to or reading from the memory array.
Abstract:
Embodiments of a multi-port memory device may include a plurality of ports and a plurality of memory banks some of which are native to each port and some of which are non-native to each port. The memory device may include a configuration register that stores configuration data indicative of the mapping of the memory banks to the ports. In response to the configuration data, for example, a steering logic may couple each of the ports either to one or all of the native memory banks or to one or all of the non-native memory banks.
Abstract:
Memory devices, systems and methods are described, such as those including a dynamically configurable channel depth. Devices, systems and methods are described that adjust channel depth based on hardware and/or software requirements. One such device provides for virtual memory operations where a channel depth is adjusted for the same physical memory region responsive to requirements of different memory processes.
Abstract:
Methods of accessing memory cells, methods of distributing memory requests, systems, and memory controllers are described. In one such method, where memory cells are divided into at least a first region of memory cells and a second region of memory cells, memory cells in the first region are accessed according to a first address definition and memory cells in the second region are accessed according to a second address definition that is different from the first address definition. Additional embodiments are described.
Abstract:
Methods, memory devices, and systems are disclosed, such as those for accessing a memory circuit through the use of reduced external pins. With one such system, a single external pin receives a global memory select signal which transmits an access signal for one of a plurality of memory circuits in a system. The memory circuits may be stacked and may also be ranked memory circuits. The global memory select signal may be sent to a counter. Such a counter could count the length of time that the global memory select signal is active, and based on the counting, sends a count signal to a comparator. The comparator may compare the count signal with a programmed value to determine if a specific memory chip and/or port is to be accessed. This configuration may be duplicated over multiple ports on the same memory device, as well as across multiple memory ranks.
Abstract:
Some embodiments provide a system that facilitates the creation of a design in an electronic design automation (EDA) application. During operation, the system determines a processing order for processing a set of cells in the design. In some embodiments, the processing order can be a reverse-levelized processing order. Next, the system may select a cell for performing area recovery according to the processing order. The system may then tentatively perform an area-recovery operation on the selected cell. Next, the system may determine a zone around the selected cell. Next, the system may propagate arrival times within the zone to obtain updated slack values at endpoints of the zone. The system may compute one or more timing metrics at the endpoints. If the updated slack values do not degrade the timing metric(s) at the endpoints, the system may accept the area-recovery operation of the selected cell.
Abstract:
The present techniques provide an internal processor of a memory device configured to selectively execute instructions in parallel, for example. One such internal processor includes a plurality of arithmetic logic units (ALUs), each connected to conditional masking logic, and each configured to process conditional instructions. A condition instruction may be received by a sequencer of the memory device. Once the condition instruction is received, the sequencer may enable the conditional masking logic of the ALUs. The sequencer may toggle a signal to the conditional masking logic such that the masking logic masks certain instructions if a condition of the condition instruction has been met, and masks other instructions if the condition has not been met. In one embodiment, each ALU in the internal processor may selectively perform instructions in parallel.
Abstract:
One or more of the present techniques provide a compute engine buffer configured to maneuver data and increase the efficiency of a compute engine. One such compute engine buffer is connected to a compute engine which performs operations on operands retrieved from the buffer, and stores results of the operations to the buffer. Such a compute engine buffer includes a compute buffer having storage units which may be electrically connected or isolated, based on the size of the operands to be stored and the configuration of the compute engine. The compute engine buffer further includes a data buffer, which may be a simple buffer. Operands may be copied to the data buffer before being copied to the compute buffer, which may save additional clock cycles for the compute engine, further increasing the compute engine efficiency.
Abstract:
The present invention concerns tunable distributed Bragg reflector (DBR) semiconductor lasers, in particular a DBR laser with a branched optical waveguide 5 within which a plurality of differently shaped lasing cavities may be formed, and a method of operation of such a laser. The laser may comprise a phase control section (418), gain section (420, 422), a sampled grating DBR (412) giving a comb-line spectrum and two tunable, chirped DBRs (414, 416) for broadband frequency training and a coupling section (410).
Abstract:
A method, system and program product for migrating an integrated circuit (IC) design from a source technology without radical design restrictions (RDR) to a target technology with RDR, are disclosed. The invention implements a minimum layout perturbation approach that addresses the RDR requirements. The invention also solves the problem of inserting dummy shapes where required, and extending the lengths of the critical shapes and/or the dummy shapes to meet ‘edge coverage’ requirements.