Abstract:
A container for transporting and displaying cut flowers comprising six elements. A material of the apparatus is substantially deformable and dishwasher safe. A base, top and sides are constructed to hold cut flowers and water and the top has at least a first and a second affixing element equidistant from each other on opposite ends of the perimeter. A bottom member suspends below the base. A carrying element has an adjustable functional length with a first and second functional end, a first and second actual end that can extend beyond each functional end, and a first and second attachable elements between the respective first and second actual end and the corresponding nearest functional end to each, the attachable element able to be removably attached at various lengths to the respective first and second affixing element for transport and attachment to a suspending element.
Abstract:
A method for semiconductor processing is provided, wherein a semiconductor wafer having undergone polishing is provided. The semiconductor wafer has an active region positioned between one or more moat regions, wherein the one or more moat regions have an oxide disposed therein. A top surface of the active region is recessed from a top surface of the moat region, therein defining a step having a step height associated therewith. A step height is measured, and a photoresist is formed over the semiconductor wafer. A modeled step height is further determined, wherein the modeled step height is based on the measured step height and a desired critical dimension of the photoresist. A dosage of energy is determined for patterning the photoresist, wherein the determination of the dosage of energy is based, at least in part, on the modeled step height. The photoresist is then patterned using the determined dosage of energy.
Abstract:
The present invention concerns tunable distributed Bragg reflector (DBR) semiconductor lasers, in particular a DBR laser with a branched optical waveguide 5 within which a plurality of differently shaped lasing cavities may be formed, and a method of operation of such a laser. The laser may comprise a phase control section (418), gain section (420, 422), a sampled grating DBR (412) giving a comb-line spectrum and two tunable, chirped DBRs (414, 416) for broadband frequency training and a coupling section (410).
Abstract:
A battery holder frame (12) that facilitates the removal of a fully installed battery (30) (electrical cell). The frame has top (20), bottom (22), opposite side (24, 26), and back walls (28) that form a cavity (14) that receives a battery by moving the battery rearward into the cavity until the battery abuts the back wall. The back wall upper portion has a bottom edge (66) and leaves an opening (62) below the bottom edge through which the bottom of the battery can move rearward out of the cavity. To remove a fully installed battery, the battery bottom is pushed rearward to cause the battery to pivot so its upper portion (152) moves forward out of the cavity and can be grasped to pull the battery out of the cavity.
Abstract:
An industrial control system includes an industrial controller and a programming interface. The industrial controller maintains a control program for interfacing with a controlled process. The programming interface is operable to communicate a transaction to the industrial controller. The transaction includes a plurality of operations for modifying the control program followed by a commit transaction command. The industrial controller is operable to preprocess the plurality of operations, designate the plurality of operations with a pending status, and commit the operations and clear the pending status responsive to receiving the commit transaction command.
Abstract:
An adapter is described for receiving a smart card (16) and for electrically connecting smart card pads (24) to terminals (44) at the rear of a PC card (40), which includes a simple and reliable latch (72) for locking the adaptor to the PC card. The latch is slidably mounted on the connector, and has a rear part (74) positioned to be pushed forward by the leading edge (80) of a smart card, and a front part (62) in the form of a pin that causes a pair of arms (54, 56) of the adaptor to lock to the PC card. The rear part is in the form of a flat bar that lies in the plane of the smart card-receiving slot (14), the flat bar extending across the width of the adaptor and having handles (100, 102) at its opposite sides that project from opposite sides of the adaptor housing for manual movement of the latch.
Abstract:
A connector that has a coupling nut (14) that is rotatable about a barrel (12), with an annular space (42) between them, and with a resistance ring (40) lying in the annular space. The resistance ring allows the nut to rotate with moderate friction in a mating direction M, and provides higher resistance to nut rotation in an unmating direction U. The resistance ring is formed from a metal band with primarily straight band sections (60, 62, 64, 66) that alternately extend at inward and outward inclines from the circumference direction C. As a result, the resistance ring zig-zags by alternately engaging the nut surface (52) that faces the annular space, then the barrel surface (50) that faces the annular space, etc. Some of the radially outer ends of the straight sections are bent into small half circles (67) that fit into corresponding slots (68) in the nut to fix the resistance ring relative to the nut. The radially inner ends of the straight sections form bumps (70) that ride over saw teeth (74, 76) formed on the barrel surface.
Abstract:
A method for semiconductor processing is provided, wherein a semiconductor wafer having undergone polishing is provided. The semiconductor wafer has an active region positioned between one or more moat regions, wherein the one or more moat regions have an oxide disposed therein. A top surface of the active region is recessed from a top surface of the moat region, therein defining a step having a step height associated therewith. A step height is measured, and a photoresist is formed over the semiconductor wafer. A modeled step height is further determined, wherein the modeled step height is based on the measured step height and a desired critical dimension of the photoresist. A dosage of energy is determined for patterning the photoresist, wherein the determination of the dosage of energy is based, at least in part, on the modeled step height. The photoresist is then patterned using the determined dosage of energy.