Cut flower container
    2.
    发明授权
    Cut flower container 有权
    切花容器

    公开(公告)号:US08910417B1

    公开(公告)日:2014-12-16

    申请号:US13549451

    申请日:2012-07-14

    CPC classification number: A47G7/06 A47G7/045 A47G7/047

    Abstract: A container for transporting and displaying cut flowers comprising six elements. A material of the apparatus is substantially deformable and dishwasher safe. A base, top and sides are constructed to hold cut flowers and water and the top has at least a first and a second affixing element equidistant from each other on opposite ends of the perimeter. A bottom member suspends below the base. A carrying element has an adjustable functional length with a first and second functional end, a first and second actual end that can extend beyond each functional end, and a first and second attachable elements between the respective first and second actual end and the corresponding nearest functional end to each, the attachable element able to be removably attached at various lengths to the respective first and second affixing element for transport and attachment to a suspending element.

    Abstract translation: 用于运输和展示切花的容器包括六个要素。 该装置的材料基本可变形,洗碗机安全。 基部,顶部和侧面被构造成保持切割的花和水,并且顶部具有在周边的相对端上彼此等距离的至少第一和第二固定元件。 底部构件悬挂在底座下面。 携带元件具有可调节的功能长度,具有第一和第二功能端,可延伸超过每个功能端的第一和第二实际端,以及相应的第一和第二实际端之间的第一和第二可附接元件以及相应的最近的功能 端部到每个,可附接元件能够可拆卸地以各种长度连接到相应的第一和第二固定元件,用于运输和附接到悬挂元件。

    Control of implant pattern critical dimensions using STI step height offset
    3.
    发明授权
    Control of implant pattern critical dimensions using STI step height offset 有权
    使用STI步距高度补偿控制植入模式临界尺寸

    公开(公告)号:US08530247B2

    公开(公告)日:2013-09-10

    申请号:US12323025

    申请日:2008-11-25

    CPC classification number: H01L22/20 H01L22/12

    Abstract: A method for semiconductor processing is provided, wherein a semiconductor wafer having undergone polishing is provided. The semiconductor wafer has an active region positioned between one or more moat regions, wherein the one or more moat regions have an oxide disposed therein. A top surface of the active region is recessed from a top surface of the moat region, therein defining a step having a step height associated therewith. A step height is measured, and a photoresist is formed over the semiconductor wafer. A modeled step height is further determined, wherein the modeled step height is based on the measured step height and a desired critical dimension of the photoresist. A dosage of energy is determined for patterning the photoresist, wherein the determination of the dosage of energy is based, at least in part, on the modeled step height. The photoresist is then patterned using the determined dosage of energy.

    Abstract translation: 提供了一种用于半导体处理的方法,其中提供了经过抛光的半导体晶片。 半导体晶片具有位于一个或多个护环区域之间的有源区域,其中一个或多个护环区域具有设置在其中的氧化物。 活性区域的顶表面从护壕区域的顶表面凹陷,其中限定具有与其相关联的台阶高度的台阶。 测量台阶高度,在半导体晶片上形成光致抗蚀剂。 进一步确定建模的台阶高度,其中所建模的台阶高度基于测量的台阶高度和光刻胶的期望临界尺寸。 确定用于图案化光致抗蚀剂的能量的量,其中能量的剂量的确定至少部分地基于建模的台阶高度。 然后使用确定的能量来对光致抗蚀剂进行构图。

    Battery holder
    5.
    发明申请
    Battery holder 失效
    电池座

    公开(公告)号:US20090023055A1

    公开(公告)日:2009-01-22

    申请号:US11879129

    申请日:2007-07-16

    CPC classification number: H01M2/105

    Abstract: A battery holder frame (12) that facilitates the removal of a fully installed battery (30) (electrical cell). The frame has top (20), bottom (22), opposite side (24, 26), and back walls (28) that form a cavity (14) that receives a battery by moving the battery rearward into the cavity until the battery abuts the back wall. The back wall upper portion has a bottom edge (66) and leaves an opening (62) below the bottom edge through which the bottom of the battery can move rearward out of the cavity. To remove a fully installed battery, the battery bottom is pushed rearward to cause the battery to pivot so its upper portion (152) moves forward out of the cavity and can be grasped to pull the battery out of the cavity.

    Abstract translation: 一种有助于去除完全安装的电池(30)(电池)的电池座框架(12)。 框架具有顶部(20),底部(22),相对侧(24,26)和后壁(28),后壁(28)形成通过将电池向后移动到空腔中而接收电池的空腔,直到电池抵接 后墙。 后壁上部具有底部边缘(66)并且在底部边缘下方留下开口(62),电池底部可以通过该开口向后移出空腔。 为了卸下完全安装的电池,电池底部被向后推动以使电池枢转,使得其上部(152)向前移出空腔并且可以被抓住以将电池拉出空腔。

    Smart card adapter latch
    7.
    发明授权
    Smart card adapter latch 失效
    智能卡适配器闩锁

    公开(公告)号:US06149450A

    公开(公告)日:2000-11-21

    申请号:US007327

    申请日:1998-01-13

    CPC classification number: G06K19/07743 G06K19/07741 G06K7/0021

    Abstract: An adapter is described for receiving a smart card (16) and for electrically connecting smart card pads (24) to terminals (44) at the rear of a PC card (40), which includes a simple and reliable latch (72) for locking the adaptor to the PC card. The latch is slidably mounted on the connector, and has a rear part (74) positioned to be pushed forward by the leading edge (80) of a smart card, and a front part (62) in the form of a pin that causes a pair of arms (54, 56) of the adaptor to lock to the PC card. The rear part is in the form of a flat bar that lies in the plane of the smart card-receiving slot (14), the flat bar extending across the width of the adaptor and having handles (100, 102) at its opposite sides that project from opposite sides of the adaptor housing for manual movement of the latch.

    Abstract translation: 描述了用于接收智能卡(16)并将智能卡垫(24)电连接到PC卡(40)后部的端子(44)的适配器,其包括用于锁定的简单可靠的闩锁(72) 将适配器连接到PC卡。 闩锁可滑动地安装在连接器上,并且具有定位成由智能卡的前缘(80)向前推动的后部(74)和引脚形式的前部(62) 适配器的一对臂(54,56)锁定到PC卡。 后部部分是位于智能卡接收槽(14)的平面中的扁平杆形式,扁平杆横跨适配器的宽度延伸,并且在相对侧具有手柄(100,102) 从适配器壳体的相对侧突出,以手动移动闩锁。

    Radial anti-rotation coupling
    9.
    发明授权
    Radial anti-rotation coupling 有权
    径向防旋转联轴器

    公开(公告)号:US07625226B1

    公开(公告)日:2009-12-01

    申请号:US12315335

    申请日:2008-12-02

    CPC classification number: H01R13/622 H01R13/639

    Abstract: A connector that has a coupling nut (14) that is rotatable about a barrel (12), with an annular space (42) between them, and with a resistance ring (40) lying in the annular space. The resistance ring allows the nut to rotate with moderate friction in a mating direction M, and provides higher resistance to nut rotation in an unmating direction U. The resistance ring is formed from a metal band with primarily straight band sections (60, 62, 64, 66) that alternately extend at inward and outward inclines from the circumference direction C. As a result, the resistance ring zig-zags by alternately engaging the nut surface (52) that faces the annular space, then the barrel surface (50) that faces the annular space, etc. Some of the radially outer ends of the straight sections are bent into small half circles (67) that fit into corresponding slots (68) in the nut to fix the resistance ring relative to the nut. The radially inner ends of the straight sections form bumps (70) that ride over saw teeth (74, 76) formed on the barrel surface.

    Abstract translation: 一种具有联接螺母(14)的连接器,所述联接螺母(14)围绕筒体(12)可旋转,在它们之间具有环形空间(42)以及位于所述环形空间中的阻力环(40)。 电阻环允许螺母在配合方向M上以适度的摩擦旋转,并且在拆卸方向U上提供更高的螺母旋转阻力。电阻环由具有主要直带部分(60,62,64)的金属带形成 ,66),其从周向方向C向内和向外倾斜地延伸。结果,阻力环通过交替地接合面向环形空间的螺母表面(52),然后将筒表面(50)交替地接合 面向环形空间等。直线部分的一些径向外端弯曲成小半圆(67),该半圆适合于螺母中相应的槽(68),以相对于螺母固定电阻环。 直线部分的径向内端形成凸起(70),该凸块(70)骑在形成在机筒表面上的锯齿(74,76)上。

    CONTROL OF IMPLANT CRITICAL DIMENSIONS USING AN STI STEP HEIGHT BASED DOSE OFFSET
    10.
    发明申请
    CONTROL OF IMPLANT CRITICAL DIMENSIONS USING AN STI STEP HEIGHT BASED DOSE OFFSET 有权
    使用基于步骤高度的剂量偏移来控制植入物的关键尺寸

    公开(公告)号:US20090170222A1

    公开(公告)日:2009-07-02

    申请号:US12323025

    申请日:2008-11-25

    CPC classification number: H01L22/20 H01L22/12

    Abstract: A method for semiconductor processing is provided, wherein a semiconductor wafer having undergone polishing is provided. The semiconductor wafer has an active region positioned between one or more moat regions, wherein the one or more moat regions have an oxide disposed therein. A top surface of the active region is recessed from a top surface of the moat region, therein defining a step having a step height associated therewith. A step height is measured, and a photoresist is formed over the semiconductor wafer. A modeled step height is further determined, wherein the modeled step height is based on the measured step height and a desired critical dimension of the photoresist. A dosage of energy is determined for patterning the photoresist, wherein the determination of the dosage of energy is based, at least in part, on the modeled step height. The photoresist is then patterned using the determined dosage of energy.

    Abstract translation: 提供了一种用于半导体处理的方法,其中提供了经过抛光的半导体晶片。 半导体晶片具有位于一个或多个护环区域之间的有源区域,其中一个或多个护环区域具有设置在其中的氧化物。 活性区域的顶表面从护壕区域的顶表面凹陷,其中限定具有与其相关联的台阶高度的台阶。 测量台阶高度,在半导体晶片上形成光致抗蚀剂。 进一步确定建模的台阶高度,其中所建模的台阶高度基于测量的台阶高度和光刻胶的期望临界尺寸。 确定用于图案化光致抗蚀剂的能量的量,其中能量的剂量的确定至少部分地基于建模的台阶高度。 然后使用确定的能量来对光致抗蚀剂进行构图。

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