Image file creating apparatus and image file reproducing apparatus
    81.
    发明授权
    Image file creating apparatus and image file reproducing apparatus 有权
    图像文件创建装置和图像文件再现装置

    公开(公告)号:US07715618B2

    公开(公告)日:2010-05-11

    申请号:US10553350

    申请日:2004-04-19

    IPC分类号: G06K9/00

    摘要: A controller (101) designates the method of integrating viewpoint images. An image integrator (102) creates an integrated image by placing individual viewpoint images in appropriate positions. A 3D image control information creator (103) creates 3D image control information by formatting the placement mode of individual viewpoint images and various 3-dimensional image characteristics. An encoder (104) encodes integrated image data. A multiplexer (105) multiplexes the coded data and the 3D image control information and outputs them. A filename deciding unit (106) decides the name of a file when multiplexed data is recorded as a file. A storage directory deciding unit (107) decides the directory in which a file to be recorded is stored. A file creator (108) records a file with the decided filename under the decided storage directory. Thus, the distinction between 3-dimensional display image data and 2-dimensional image data can be clarified.

    摘要翻译: 控制器(101)指定集成视点图像的方法。 图像积分器(102)通过将各个视点图像放置在适当的位置来创建集成图像。 3D图像控制信息创建器(103)通过格式化各个视点图像的放置模式和各种三维图像特征来创建3D图像控制信息。 编码器(104)对集成的图像数据进行编码。 复用器(105)对编码数据和3D图像控制信息进行复用并输出。 文件名决定单元(106)在复制数据被记录为文件时决定文件的名称。 存储目录决定单元(107)决定存储要记录的文件的目录。 文件创建者(108)在确定的存储目录下记录具有所确定的文件名的文件。 因此,可以说明3维显示图像数据和2维图像数据之间的区别。

    Threshold voltage modulation image sensor
    82.
    发明授权
    Threshold voltage modulation image sensor 失效
    阈值电压调制图像传感器

    公开(公告)号:US07683452B2

    公开(公告)日:2010-03-23

    申请号:US11089366

    申请日:2005-03-25

    IPC分类号: H01L27/146

    摘要: An image sensor has a plurality of pixels each with a photoelectric conversion element and a detection transistor the threshold voltage of which fluctuates in accordance with electrical charge generated in the photoelectric conversion element. The image sensor includes a second conductivity type shield region and a first conductivity type photoelectric conversion region; a first conductivity type well region linked to the photoelectric conversion region; a ring-like gate electrode; a second conductivity type source region at the inside of the ring-like gate electrode; a second conductivity type drain region. The image sensor further includes a potential pocket region that is formed in the well region below the ring-like gate electrode and accumulates the electrical charge, wherein the width of the gate electrode is formed narrower in the part adjacent to the photoelectric conversion region than in other parts.

    摘要翻译: 图像传感器具有多个像素,每个像素具有光电转换元件和阈值电压根据光电转换元件中产生的电荷而波动的检测晶体管。 图像传感器包括第二导电类型屏蔽区域和第一导电类型光电转换区域; 连接到光电转换区的第一导电类型阱区; 环状栅电极; 位于环状栅电极内部的第二导电型源区; 第二导电类型漏极区域。 图像传感器还包括形成在环状栅极电极下方的阱区中的电势袋区域,并蓄积电荷,其中栅电极的宽度在与光电转换区相邻的部分形成得比在 其他部分。

    Image shooting apparatus, display apparatus and image shooting and display apparatus
    83.
    发明授权
    Image shooting apparatus, display apparatus and image shooting and display apparatus 失效
    图像拍摄装置,显示装置和图像拍摄和显示装置

    公开(公告)号:US07599616B2

    公开(公告)日:2009-10-06

    申请号:US11239258

    申请日:2005-09-30

    IPC分类号: G03B35/00

    CPC分类号: G03B35/00 H04N13/359

    摘要: An image shooting and display apparatus includes: a plurality of image pickup portions. An image pickup controller switches image pickup portions to be used in accordance with the image shooting mode. It also switches the image shooting mode in accordance with the image pickup portions to be actuated in accordance with the usage condition of the apparatus. A mode switching controller switches shooting mode and display mode, and controls image pickup portions suitable for each mode by way of the image pickup controller and also controls an image display portion.

    摘要翻译: 一种图像拍摄和显示装置包括:多个图像拾取部分。 图像拾取控制器根据图像拍摄模式切换要使用的图像拾取部分。 它还根据要根据装置的使用条件被致动的图像拾取部分切换图像拍摄模式。 模式切换控制器切换拍摄模式和显示模式,并且通过图像拾取控制器控制适合于每种模式的图像拾取部分,并且还控制图像显示部分。

    Image Data Display Apparatus
    84.
    发明申请
    Image Data Display Apparatus 有权
    图像数据显示装置

    公开(公告)号:US20080106550A1

    公开(公告)日:2008-05-08

    申请号:US11632044

    申请日:2005-08-11

    IPC分类号: G06T15/10 G06T15/20

    摘要: A controller 103, based on the positional information of the display image, selects whether the 3-dimensional image data decoded by a decoder 102 is displayed stereoscopically (in 3-dimensional display mode) or planarly (in 2-dimensional display mode) and gives notice of the selected display mode to a display portion 104. Specifically, the input positional information=display address is monitored, and if no temporal change occurs, namely if the displayed position of the image data does not change, 3-dimensional display mode is selected as the display mode. On the other hand, if there is a temporal change, namely if the displayed position of the image data varies by scrolling, 2-dimensional display mode is selected as the display mode. Thus, an image data display apparatus which can efficiently display image data on a display when display of 3-dimensional image data is scrolled is provided.

    摘要翻译: 控制器103基于显示图像的位置信息,选择立体地(三维显示模式)或平面(二维显示模式)显示由解码器102解码的3维图像数据,并给出 通知所选择的显示模式到显示部分104。 具体地,监视输入位置信息=显示地址,如果没有发生时间变化,即如果图像数据的显示位置没有改变,则选择3维显示模式作为显示模式。 另一方面,如果存在时间变化,即如果图像数据的显示位置通过滚动而变化,则选择二维显示模式作为显示模式。 因此,提供了当滚动显示3维图像数据时可以在显示器上有效地显示图像数据的图像数据显示装置。

    Semiconductor device, manufacturing method thereof, and CMOS integrated circuit device
    85.
    发明授权
    Semiconductor device, manufacturing method thereof, and CMOS integrated circuit device 有权
    半导体装置及其制造方法以及CMOS集成电路装置

    公开(公告)号:US07354817B2

    公开(公告)日:2008-04-08

    申请号:US11300274

    申请日:2005-12-15

    IPC分类号: H01L21/8238

    摘要: A semiconductor device includes a semiconductor substrate. A gate electrode is formed on the semiconductor substrate via a gate insulating film. A source region and a drain region of a first conductivity type are formed on the first side and the second side of the gate electrode, respectively, in the semiconductor substrate. A punch-through stopper region of a second conductivity type is formed in the semiconductor substrate such that the second conductivity type punch-through stopper region is located between the source region and the drain region at distances from the source region and the drain region and extends in the direction perpendicular to the principal surface of the semiconductor substrate. The concentration of an impurity element of the second conductivity type in the punch-through stopper region is set to be at least five times the substrate impurity concentration between the source region and the drain region.

    摘要翻译: 半导体器件包括半导体衬底。 栅电极通过栅极绝缘膜形成在半导体衬底上。 在半导体衬底中分别在栅电极的第一侧和第二侧上形成第一导电类型的源极区和漏极区。 第二导电类型的穿通止挡区形成在半导体衬底中,使得第二导电类型穿通阻止区位于距源极区和漏极区的距离处的源极区和漏极区之间,并延伸 在垂直于半导体衬底的主表面的方向上。 穿通阻止区域中的第二导电类型的杂质元素的浓度被设定为源极区域和漏极区域之间的衬底杂质浓度的至少五倍。

    Image shooting apparatus, display apparatus and image shooting and display apparatus
    86.
    发明申请
    Image shooting apparatus, display apparatus and image shooting and display apparatus 失效
    图像拍摄装置,显示装置和图像拍摄和显示装置

    公开(公告)号:US20070077056A1

    公开(公告)日:2007-04-05

    申请号:US11239258

    申请日:2005-09-30

    IPC分类号: G03B35/00

    CPC分类号: G03B35/00 H04N13/359

    摘要: An image shooting and display apparatus includes: a plurality of image pickup portions. An image pickup controller switches image pickup portions to be used in accordance with the image shooting mode. It also switches the image shooting mode in accordance with the image pickup portions to be actuated in accordance with the usage condition of the apparatus. A mode switching controller switches shooting mode and display mode, and controls image pickup portions suitable for each mode by way of the image pickup controller and also controls an image display portion.

    摘要翻译: 一种图像拍摄和显示装置包括:多个图像拾取部分。 图像拾取控制器根据图像拍摄模式切换要使用的图像拾取部分。 它还根据要根据装置的使用条件被致动的图像拾取部分切换图像拍摄模式。 模式切换控制器切换拍摄模式和显示模式,并且通过图像拾取控制器控制适合于每种模式的图像拾取部分,并且还控制图像显示部分。

    Semiconductor device and manufacturing method of semiconductor device
    87.
    发明申请
    Semiconductor device and manufacturing method of semiconductor device 有权
    半导体器件及半导体器件的制造方法

    公开(公告)号:US20060273398A1

    公开(公告)日:2006-12-07

    申请号:US11273400

    申请日:2005-11-15

    IPC分类号: H01L23/62

    CPC分类号: H01L27/0266

    摘要: To present a semiconductor device mounting ESD protective device appropriately applicable to transistors mutually different in dielectric strength, and its manufacturing method. The semiconductor device comprises a first ESD protective circuit 1A including a first transistor 3 and a first ballast resistance 4, and a second ESD protective circuit 1B including a second transistor 5 and a second ballast resistance 6. The impurity concentration of the second diffusion region forming the first ballast resistance 4 is set lower than the impurity concentration of the fourth diffusion region for forming the second ballast resistance 6.

    摘要翻译: 提出一种适用于介电强度相互不同的晶体管的半导体器件的ESD保护器及其制造方法。 半导体器件包括包括第一晶体管3和第一镇流电阻4的第一ESD保护电路1A和包括第二晶体管5和第二镇流电阻6的第二ESD保护电路1B。 形成第一镇流电阻4的第二扩散区域的杂质浓度设定为低于用于形成第二镇流电阻6的第四扩散区域的杂质浓度。

    Three-dimensionally viewed image providing method, and three-dimensional image display apparatus
    88.
    发明申请
    Three-dimensionally viewed image providing method, and three-dimensional image display apparatus 审中-公开
    三维观看图像提供方法和三维图像显示装置

    公开(公告)号:US20060209183A1

    公开(公告)日:2006-09-21

    申请号:US10553390

    申请日:2004-04-15

    IPC分类号: H04N13/04 H04N13/00 H04N15/00

    摘要: A transmission-side device, when transmitting as data a plurality of two-dimensional images of different viewpoints, used as stereoscopic vision-use images, transmits the data of the two-dimensional images, and in addition, viewpoint-number information allotted to each data of the two-dimensional images and viewpoint-number information as information for selecting one or more two-dimensional images, together with the data of the two-dimensional images as attached information. A transmission-side device receives the plurality of image data and the attached information, and when performing a thumb-nail display, etc., by one image out of the plurality of the image data for example, performs a process for selecting the image data from the viewpoint-number information as information for selecting the two-dimensional images.

    摘要翻译: 作为立体视觉用图像的多个不同视点的二维图像作为数据进行发送的发送侧装置,发送二维图像的数据,另外,分配给每个图像的视点数信息 作为用于选择一个或多个二维图像的信息的二维图像和视点编号信息的数据连同二维图像的数据一起作为附加信息。 发送侧装置接收多个图像数据和附加信息,并且当例如通过多个图像数据中的一个图像执行缩略图显示等时,执行用于选择图像数据的处理 从作为用于选择二维图像的信息的视点数信息。

    Cross current compensation control system for a power system
    89.
    发明授权
    Cross current compensation control system for a power system 有权
    电力系统交叉电流补偿控制系统

    公开(公告)号:US07053503B2

    公开(公告)日:2006-05-30

    申请号:US10265632

    申请日:2002-10-08

    IPC分类号: H02J1/02

    摘要: Across current compensation control system includes a cross current detection compensator having an input terminal to which a cross connection line that cross-connects the secondary sides of auxiliary current transformers (CTs) are connected, and an output terminal to which cross current compensation lines that connect the secondary sides of CTs in series are connected, in which the cross current detection compensator supplies a compensation current to the cross current compensation line so as to cancel the current component corresponding to the cross current that appears at the secondary sides of the CTs when detecting the cross current that circulates within a bus bar, a distribution line, and a switch.

    摘要翻译: 跨电流补偿控制系统包括交叉电流检测补偿器,其具有连接辅助电流互感器(CT)的次级侧的交叉连接线的输入端子和连接有交流电流补偿线路的输出端子 串联的CT的次级侧被连接,其中交叉电流检测补偿器向交叉电流补偿线路提供补偿电流,以便在检测到CT时,消除对应于在CT的次级侧出现的交叉电流的电流分量 在母线,配电线路和开关中循环的交叉电流。

    Semiconductor device and its manufacture method
    90.
    发明申请
    Semiconductor device and its manufacture method 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20060084208A1

    公开(公告)日:2006-04-20

    申请号:US11242648

    申请日:2005-10-04

    IPC分类号: H01L21/337

    摘要: A simplified method of manufacturing a multi-voltage semiconductor integrated circuit device. A method of manufacturing a semiconductor device includes the steps of: forming a first gate insulating film with a first thickness in a first area of a semiconductor substrate: forming a second gate insulating film with a second thickness thinner than the first thickness in a second area of the semiconductor substrate; forming on gate electrodes on the first and second gate insulating films and leaving the first and second gate insulating films in the first and second areas; implanting impurity ions into the first and second areas via the first and second gate insulating films to dope impurities into the first area at a first low impurity concentration and into the second area at a second impurity concentration higher than the first impurity concentration; removing the first and second gate insulating films at least in an area where contacts are formed; and doping impurities at a high impurity concentration in an area including the area where contacts are formed, in the first and second areas.

    摘要翻译: 一种制造多电压半导体集成电路器件的简化方法。 一种制造半导体器件的方法包括以下步骤:在半导体衬底的第一区域中形成具有第一厚度的第一栅极绝缘膜:在第二区域中形成具有比第一厚度更薄的第二厚度的第二栅极绝缘膜 的半导体衬底; 在所述第一和第二栅极绝缘膜上的栅电极上形成并且在所述第一和第二区域中留下所述第一和第二栅极绝缘膜; 通过第一和第二栅极绝缘膜将杂质离子注入到第一和第二区域中,以在第一低杂质浓度下杂质掺杂到第一区域,并以高于第一杂质浓度的第二杂质浓度进入第二区域; 至少在形成接触的区域中去除第一和第二栅极绝缘膜; 并且在第一和第二区域中在包括形成接触的区域的区域中掺杂高杂质浓度的杂质。