公开(公告)号：US20220384622A1

公开(公告)日：2022-12-01

申请号：US17883882

申请日：2022-08-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

公开(公告)号：US20210184021A1

公开(公告)日：2021-06-17

申请号：US17070349

申请日：2020-10-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Toshinari SASAKI

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L21/441

Abstract: In a top-gate transistor in which an oxide semiconductor film, a gate insulating film, a gate electrode layer, and a silicon nitride film are stacked in this order and the oxide semiconductor film includes a channel formation region, nitrogen is added to regions of part of the oxide semiconductor film and the regions become low-resistance regions by forming a silicon nitride film over and in contact with the oxide semiconductor film. A source and drain electrode layers are in contact with the low-resistance regions. A region of the oxide semiconductor film, which does not contact the silicon nitride film (that is, a region overlapping with the gate insulating film and the gate electrode layer) becomes the channel formation region.

公开(公告)号：US20200006393A1

公开(公告)日：2020-01-02

申请号：US16569070

申请日：2019-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU

IPC: H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

公开(公告)号：US20190288093A1

公开(公告)日：2019-09-19

申请号：US16429176

申请日：2019-06-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/51 ,  H01L21/02 ,  H01L27/12

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20180342538A1

公开(公告)日：2018-11-29

申请号：US15957318

申请日：2018-04-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H01L29/45 ,  H01L27/32 ,  H01L29/49

CPC classification number: H01L27/1225 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

公开(公告)号：US20180294363A1

公开(公告)日：2018-10-11

申请号：US16003145

申请日：2018-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L21/02 ,  H01L29/24

Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20180233589A1

公开(公告)日：2018-08-16

申请号：US15953795

申请日：2018-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another obj ect to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

公开(公告)号：US20170033205A1

公开(公告)日：2017-02-02

申请号：US15292243

申请日：2016-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Toshinari SASAKI

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/441 ,  H01L29/786

Abstract: In a top-gate transistor in which an oxide semiconductor film, a gate insulating film, a gate electrode layer, and a silicon nitride film are stacked in this order and the oxide semiconductor film includes a channel formation region, nitrogen is added to regions of part of the oxide semiconductor film and the regions become low-resistance regions by forming a silicon nitride film over and in contact with the oxide semiconductor film. A source and drain electrode layers are in contact with the low-resistance regions. A region of the oxide semiconductor film, which does not contact the silicon nitride film (that is, a region overlapping with the gate insulating film and the gate electrode layer) becomes the channel formation region.

Abstract translation: 在其中氧化物半导体膜，栅极绝缘膜，栅电极层和氮化硅膜依次堆叠并且氧化物半导体膜包括沟道形成区域的顶栅晶体管中，将氮添加到 氧化物半导体膜的一部分，并且通过在氧化物半导体膜上形成氮化硅膜并与氧化物半导体膜接触而成为低电阻区域。 源极和漏极电极层与低电阻区域接触。 不接触氮化硅膜（即，与栅极绝缘膜和栅电极层重叠的区域）的氧化物半导体膜的区域成为沟道形成区域。

公开(公告)号：US20160380106A1

公开(公告)日：2016-12-29

申请号：US15259294

申请日：2016-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.

公开(公告)号：US20160181406A1

公开(公告)日：2016-06-23

申请号：US15057457

申请日：2016-03-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

IPC: H01L29/66 ,  H01L29/24 ,  H01L21/02 ,  H01L29/786 ,  H01L21/465 ,  H01L21/441

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/441 ,  H01L21/465 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

Abstract: An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.

Abstract translation: 本发明的目的是提供一种包括控制载流子密度的氧氮化物半导体的半导体器件。 通过将控制氮引入到氧化物半导体层中，可以制造其中具有期望的载流子密度和特性的氧氮化物半导体用于沟道的晶体管。 此外，通过使用氧氮化物半导体，即使在氮氧化物半导体层和源电极之间以及氧氮化物半导体层和漏电极之间没有设置低电阻层等的情况下，也可以表现出良好的接触特性。