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295 条记录 (耗时 0.035 秒)

    Variable gain circuit with improved gain response
    81.
    发明授权
    Variable gain circuit with improved gain response 失效
    可变增益电路具有改善的增益响应

    公开(公告)号：US6127890A

    公开(公告)日：2000-10-03

    申请号：US262915

    申请日：1999-03-05

    申请人： Katsuya Shimomura ,  Shinji Saito

    发明人： Katsuya Shimomura ,  Shinji Saito

    IPC分类号： H03F1/32 ,  H03F3/45 ,  H03G1/00 ,  H03G3/10 ,  H03G3/20 ,  H04B1/04 ,  H04B1/16

    CPC分类号： H03G1/0023 ,  H03F3/45071

    摘要： A variable gain circuit amplifies an input signal with a gain which depends on a control voltage. The gain circuit has a first amplifier with a gain that is proportional to the control voltage in a relatively low region of the control voltage and a second amplifier with a gain that is proportional to the control voltage in a relatively high region of the control voltage. The second amplifier also includes a gain circuit which maintains the gain of the second amplifier constant in a relatively low range of the control voltage. The second amplifier is connected to the first amplifier via a pair of coupling capacitors. The variable gain circuit may be used in a transmitter of a CDMA telephone.

    摘要翻译： 可变增益电路以取决于控制电压的增益放大输入信号。 增益电路具有第一放大器，其具有与控制电压的较低区域中的控制电压成比例的增益，以及具有与控制电压的较高区域中的控制电压成比例的增益的第二放大器。 第二放大器还包括增益电路，其保持第二放大器的增益在控制电压的相对低的范围内恒定。 第二放大器经由一对耦合电容器连接到第一放大器。 可变增益电路可以用在CDMA电话的发射机中。

    Multi-layer structured nitride-based semiconductor devices
    82.
    发明授权
    Multi-layer structured nitride-based semiconductor devices 失效
    多层结构氮化物基半导体器件

    公开(公告)号：US6121638A

    公开(公告)日：2000-09-19

    申请号：US955747

    申请日：1997-10-22

    申请人： John Rennie ,  Genichi Hatakoshi ,  Shinji Saito

    发明人： John Rennie ,  Genichi Hatakoshi ,  Shinji Saito

    IPC分类号： H01L33/00 ,  H01L33/32 ,  H01S5/327 ,  H01S5/343 ,  A01L33/00 ,  A01L31/0328 ,  A01L31/0336 ,  A01L31/109

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01S2301/173 ,  H01S5/3214 ,  H01S5/327 ,  H01S5/34333

    摘要： At an n--n hetero-interface in a GaN-based or ZnSe-based multilayered semiconductor laser and light-emitting diode, an excessive voltage drop causing the operating voltage to increased is reduced, thereby lengthening the service life of the device. A single or plurality of n-type intermediate layers are provided in the n--n hetero-interface region where the excessive voltage drop develops. The excessive voltage drop developing at the n--n hetero-interface is decreased by setting the energy value at the edge of the conduction band of each intermediate layer to a mid-value between the energy values at the edges of the conduction bands of the n-type compound semiconductors adjoining both sides of the intermediate layer. The configuration of a GaN-based MQW laser including the intermediate layer formed on sapphire substrate is shown. The relationship between the lattice constant of an intermediate layer necessary for obtaining an intermediate layer excellent in crystallinity suitable for the above object and the lattice constants of compound semiconductors adjoining both sides of the intermediate layer is described.

    摘要翻译： 在基于GaN或ZnSe的多层半导体激光器和发光二极管中的n-n异质界面处，降低了导致工作电压增加的过大的电压降，从而延长了器件的使用寿命。 在形成过大的电压降的n-n异质界面区域中设置单个或多个n型中间层。 通过将n型异质界面的导带边缘处的能量值设定在n型导带边缘的能量值之间的中间值，可以减小在nn异质界面处产生的过大的电压降 邻接中间层两侧的复合半导体。 示出了包括在蓝宝石衬底上形成的中间层的GaN基MQW激光器的构造。 描述了获得适合于上述目的的结晶度优异的中间层所需的中间层的晶格常数与邻接中间层两侧的化合物半导体的晶格常数之间的关系。

    Brazing material for stainless steel
    83.
    发明授权
    Brazing material for stainless steel 失效
    不锈钢钎焊材料

    公开(公告)号：US6074604A

    公开(公告)日：2000-06-13

    申请号：US87205

    申请日：1998-05-29

    申请人： Shinji Saito ,  Takashi Kayamoto

    发明人： Shinji Saito ,  Takashi Kayamoto

    IPC分类号： B23K1/19 ,  B23K35/30 ,  C22C9/02 ,  C22C9/06 ,  C22C19/03 ,  C22C19/05 ,  C22C30/00

    CPC分类号： B23K35/3033 ,  B23K35/302 ,  C22C9/02 ,  C22C9/06 ,  B23K2203/05

    摘要： Provided is a brazing filler metal for brazing stainless steel at low temperatures so as not to adversely affect the properties of the stainless steel, and without producing any brittleness in the brazed joint. The brazing filler metal essentially consists of 5 to 30 weight % of Mn or Sn, 20 to 70 weight % of Cu, inevitable impurities, and a balance of Ni. The brazing filler metal may further include no more than 3 weight % of Cr and/or Si.

    摘要翻译： 本发明提供一种用于低温钎焊不锈钢的钎料，以不会不利地影响不锈钢的性能，并且不会在钎焊接头中产生任何脆性。 钎焊料基本上由Mn或Sn的5〜30重量％，Cu的20〜70重量％，不可避免的杂质和余量的Ni组成。 该钎料可以进一步包括不超过3重量％的Cr和/或Si。

    Light emitter with lowered heterojunction interface barrier
    86.
    发明授权
    Light emitter with lowered heterojunction interface barrier 失效
    具有降低的异质结界面屏障的发光体

    公开(公告)号：US6005263A

    公开(公告)日：1999-12-21

    申请号：US976916

    申请日：1997-11-24

    申请人： Shinji Saito ,  Masaaki Onomura ,  Yukie Nishikawa ,  Masayuki Ishikawa ,  Peter James Parbrook

    发明人： Shinji Saito ,  Masaaki Onomura ,  Yukie Nishikawa ,  Masayuki Ishikawa ,  Peter James Parbrook

    IPC分类号： H01L33/00 ,  H01L33/02

    CPC分类号： H01L33/025 ,  H01L33/007 ,  H01L33/0087

    摘要： A semiconductor device includes a first semiconductor layer formed of first semiconductor, a second semiconductor layer formed on the first semiconductor layer and formed of second semiconductor of a group different from a group to which the first semiconductor belongs, and a third semiconductor layer formed between the first and second semiconductor layers, the third semiconductor layer being one of a layer formed of third semiconductor of the same group as the first semiconductor and having an impurity concentration higher than the first semiconductor layer and a layer formed of fourth semiconductor of the same group as the second semiconductor and having an impurity concentration higher than the second semiconductor layer.

    摘要翻译： 半导体器件包括由第一半导体形成的第一半导体层，形成在第一半导体层上并由不同于第一半导体所属的基团的第二半导体形成的第二半导体层以及形成在第一半导体之间的第三半导体层 第一和第二半导体层，第三半导体层是由与第一半导体相同的组的第三半导体形成的层，其杂质浓度高于第一半导体层，由与第一半导体层相同的第四半导体形成的层 所述第二半导体具有高于所述第二半导体层的杂质浓度。

    Magnetic recording medium
    88.
    发明授权
    Magnetic recording medium 失效
    磁记录介质

    公开(公告)号：US5976660A

    公开(公告)日：1999-11-02

    申请号：US843772

    申请日：1997-04-22

    申请人： Shinji Saito ,  Nobuo Yamazaki

    发明人： Shinji Saito ,  Nobuo Yamazaki

    IPC分类号： C09D5/23 ,  G11B5/70 ,  G11B5/706

    CPC分类号： G11B5/70 ,  G11B5/70678 ,  Y10S428/90 ,  Y10T428/265

    摘要： A magnetic recording medium comprising a non-magnetic support having a substantially non-magnetic undercoating layer on the non-magnetic support and a magnetic layer comprising a ferromagnetic hexagonal ferrite fine powder dispersed in a binder on the undercoating layer in this order, wherein the squareness ratio of the magnetic layer in the perpendicular direction is at least 0.4, the coercive force of the magnetic layer in the perpendicular direction is at least 1,500 Oe, and between the bit minimum inversion interval Y .mu.m and the maximum inversion interval Z .mu.m of the digital signal to be recorded and the thickness X .mu.m of the magnetic layer, there are the relations;X.ltoreq.Y.ltoreq.0.8 .mu.mZ.ltoreq.1.0 .mu.m.The high-density recording characteristics are greatly improved and the occurrence of an error rate is less.

    摘要翻译： 一种磁记录介质，包括在非磁性载体上具有基本上非磁性底涂层的非磁性载体和包含依次层合在底涂层上的粘合剂中的铁磁性六方铁氧体细粉末的磁性层，其中矩形度 磁性层在垂直方向上的比例至少为0.4，磁性层在垂直方向上的矫顽力至少为1500Oe，位最小反转间隔Y m m与最大反转间隔Z mu m之间 要记录的数字信号和磁层的厚度X mu m有关系; X

    Apparatus for measuring ash content of food stuff by ultraviolet radiation
    90.
    发明授权
    Apparatus for measuring ash content of food stuff by ultraviolet radiation 失效
    用于通过紫外线辐射测量食物的灰分含量的装置

    公开(公告)号：US5952234A

    公开(公告)日：1999-09-14

    申请号：US942300

    申请日：1997-10-01

    申请人： Satoru Satake ,  Takaharu Kameoka ,  Yukio Hosaka ,  Takeshi Imai ,  Shinji Saito

    发明人： Satoru Satake ,  Takaharu Kameoka ,  Yukio Hosaka ,  Takeshi Imai ,  Shinji Saito

    IPC分类号： G01N21/27 ,  G01N21/33 ,  G01N21/35 ,  G01N21/3563 ,  G01N21/359 ,  G01N33/02

    CPC分类号： G01N21/33 ,  G01N21/274 ,  G01N21/3563 ,  G01N21/359 ,  G01N33/02 ,  Y10T436/10

    摘要： A method for measuring ash content of food stuff is carried out by 1) preparing, with respect to food stuff samples whose ash content values are known, a calibration curve by a non-linear analysis of absorbance values and the known ash content of each sample, the absorbance values being obtained by irradiating light having particular wavelengths containing at least an ultraviolet ray band wavelength, the particular wavelength being specific to organic ingredients well coupled to inorganic ingredients which result in the ash content, and 2) deriving, with respect to a sample whose ash content value is unknown, an ash content value of the sample from absorbance values obtained by irradiating, on the sample, light having the particular wavelengths containing at least the ultraviolet ray band wavelength and from the calibration curve prepared in advance by the non-linear analysis. An apparatus for carrying out the method includes a light source section, a photo detecting section, a storing section for storing the calibration curve, and a calculation section for calculating, with respect to a sample whose ash content value is unknown, the ash content value based on the absorbance values and the calibration curve stored in the storing section. It is possible to speed up the measuring operation and to improve the measuring precision.

    摘要翻译： 通过以下方式进行食品灰分含量测定的方法：1）对于灰分含量已知的食品样品，通过吸光度值的非线性分析和每个样品的已知灰分含量制备校准曲线 通过照射具有至少具有紫外线波长的特定波长的光获得的吸光度值，该特定波长特异于有机成分，其与无机成分良好耦合，导致灰分含量，以及2）相对于 灰分含量未知的样品，样品的灰分含量值，其通过在样品上照射具有至少包含紫外线波段波长的特定波长的光和由非预定制备的校准曲线获得的吸光度值， 线性分析。 用于执行该方法的装置包括光源部分，光检测部分，用于存储校准曲线的存储部分，以及计算部分，用于相对于灰分含量值未知的样本计算灰分含量值 基于存储部分中存储的吸光度值和校准曲线。 可以加快测量操作，提高测量精度。