公开(公告)号：US07914623B2

公开(公告)日：2011-03-29

申请号：US11977701

申请日：2007-10-24

Applicant: James S. Papanu ,  Han-Wen Chen ,  Brian J. Brown ,  Steven Verhaverbeke

Inventor： James S. Papanu ,  Han-Wen Chen ,  Brian J. Brown ,  Steven Verhaverbeke

IPC: H01L21/461

CPC classification number: H01L21/02057 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/928

Abstract: A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

Abstract translation: 干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。 晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。 在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。 清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。 湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

公开(公告)号：US20110006034A1

公开(公告)日：2011-01-13

申请号：US12821400

申请日：2010-06-23

Applicant: Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

Inventor： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

IPC: G11B5/84

CPC classification number: G11B5/84 ,  G03F7/427

Abstract: A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

Abstract translation: 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

公开(公告)号：US07819985B2

公开(公告)日：2010-10-26

申请号：US11497193

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick R. Endo

Inventor： Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick R. Endo

IPC: B08B7/00 ,  B08B3/00 ,  B08B7/04

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20100221606A1

公开(公告)日：2010-09-02

申请号：US12396277

申请日：2009-03-02

Applicant: Omkaram Nalamasu ,  Steven Verhaverbeke

Inventor： Omkaram Nalamasu ,  Steven Verhaverbeke

IPC: H01M4/00 ,  C25D11/02

CPC classification number: H01G9/048 ,  C25D11/32 ,  H01G9/0032 ,  H01G9/055 ,  H01G9/07 ,  H01G11/26 ,  H01G11/28 ,  H01G11/86 ,  H01M4/0404 ,  H01M4/134 ,  H01M10/0587 ,  Y02E60/13

Abstract: A method of fabricating an energy storage device with a large surface area electrode comprises: providing an electrically conductive substrate; depositing a semiconductor layer on the electrically conductive substrate, the semiconductor layer being a first electrode; anodizing the semiconductor layer, wherein the anodization forms pores in the semiconductor layer, increasing the surface area of the first electrode; after the anodization, providing an electrolyte and a second electrode to form the energy storage device. The substrate may be a continuous film and the electrode of the energy storage device may be fabricated using linear processing tools. The semiconductor may be silicon and the deposition tool may be a thermal spray tool. Furthermore, the semiconductor layer may be amorphous. The energy storage device may be rolled into a cylindrical shape. The energy storage device may be a battery, a capacitor or an ultracapacitor.

Abstract translation: 一种制造具有大表面积电极的能量存储装置的方法包括：提供导电基板; 在所述导电基板上沉积半导体层，所述半导体层是第一电极; 阳极氧化半导体层，其中阳极氧化在半导体层中形成孔，增加第一电极的表面积; 在阳极氧化之后，提供电解质和第二电极以形成能量存储装置。 衬底可以是连续膜，并且可以使用线性加工工具来制造能量存储装置的电极。 半导体可以是硅，并且沉积工具可以是热喷涂工具。 此外，半导体层可以是无定形的。 储能装置可以卷成圆柱形。 储能装置可以是电池，电容器或超级电容器。

公开(公告)号：US20100096256A1

公开(公告)日：2010-04-22

申请号：US12255865

申请日：2008-10-22

Applicant: OMKARAM NALAMASU ,  Steven Verhaverbeke ,  Majeed Foad ,  Mahalingam Venkatesan ,  Nety M. Krishna

Inventor： OMKARAM NALAMASU ,  Steven Verhaverbeke ,  Majeed Foad ,  Mahalingam Venkatesan ,  Nety M. Krishna

IPC: C23F1/02

CPC classification number: G11B5/84 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B5/855 ,  H01F41/34

Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

Abstract translation: 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 磁性薄膜的一部分经受热激发。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。

公开(公告)号：US07632756B2

公开(公告)日：2009-12-15

申请号：US10927442

申请日：2004-08-26

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L21/302

CPC classification number: H01L21/02063 ,  G03F7/423 ,  G03F7/427 ,  H01L21/31133 ,  H01L21/76808

Abstract: A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photoresist removal solution; subjecting the sacrificial layer to a plasma hydrogen; and contacting the sacrificial material layer with an etchant solution.

Abstract translation: 一种制造半导体器件的方法。 该方法包括使其上形成有光致抗蚀剂层的衬底经受等离子体氢，所述衬底还在其上形成牺牲层; 使光致抗蚀剂层与光致抗蚀剂去除溶液接触; 使牺牲层经受等离子体氢; 并使牺牲材料层与蚀刻剂溶液接触。

公开(公告)号：US07521374B2

公开(公告)日：2009-04-21

申请号：US10997194

申请日：2004-11-23

Applicant: Steven Verhaverbeke ,  Dennis Yost ,  Roman Gouk

Inventor： Steven Verhaverbeke ,  Dennis Yost ,  Roman Gouk

IPC: H01L21/461 ,  H01L21/31

CPC classification number: H01L21/02052 ,  H01L21/31111 ,  H01L21/67051

Abstract: According to one aspect of the present invention, a method and apparatus for cleaning a semiconductor substrate is provided. The method may include supporting a semiconductor substrate, the semiconductor substrate having a surface, and dispensing an amount of semiconductor substrate processing liquid onto the surface of the semiconductor substrate, the amount of semiconductor substrate processing liquid being such that substantially none of the semiconductor substrate processing liquid flows off the surface of the semiconductor substrate. The semiconductor substrate processing fluid may form a standing puddle on the surface of the semiconductor substrate. The semiconductor substrate may be rotated while the semiconductor substrate processing liquid is on the surface of the semiconductor substrate such that substantially all of the amount of semiconductor substrate processing liquid remains on the surface of the semiconductor substrate during said rotation.

Abstract translation: 根据本发明的一个方面，提供了一种用于清洁半导体衬底的方法和装置。 该方法可以包括：支撑半导体衬底，半导体衬底具有表面，以及将一定量的半导体衬底处理液体分配到半导体衬底的表面上，半导体衬底处理液体的量基本上不使用半导体衬底处理 液体从半导体衬底的表面流出。 半导体衬底处理流体可以在半导体衬底的表面上形成站立的水坑。 当半导体衬底处理液体在半导体衬底的表面上时半导体衬底可以旋转，使得在所述旋转期间基本上所有量的半导体衬底处理液体都保留在半导体衬底的表面上。

公开(公告)号：US20080083437A1

公开(公告)日：2008-04-10

申请号：US11977818

申请日：2007-10-26

Applicant: Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

Inventor： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC: B08B3/12 ,  B08B3/02 ,  B08B3/08

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20080081485A1

公开(公告)日：2008-04-03

申请号：US11977701

申请日：2007-10-24

Applicant: James Papanu ,  Han-Wen Chen ,  Brian Brown ,  Steven Verhaverbeke

Inventor： James Papanu ,  Han-Wen Chen ,  Brian Brown ,  Steven Verhaverbeke

IPC: H01L21/461

CPC classification number: H01L21/02057 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/928

Abstract: A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

Abstract translation: 干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。 晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。 在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。 清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。 湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

公开(公告)号：US20080045029A1

公开(公告)日：2008-02-21

申请号：US11975578

申请日：2007-10-19

Applicant: Steven Verhaverbeke ,  Brian Brown

Inventor： Steven Verhaverbeke ,  Brian Brown

IPC: B08B3/00 ,  H01L21/461

CPC classification number: H01L21/67155 ,  B08B3/12 ,  B08B7/04 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67057

Abstract: According to one aspect of the invention, a semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The semiconductor substrate processing apparatus may include a semiconductor substrate support, a dispense head positioned over the semiconductor substrate support, a liquid container, and a transport subsystem. A semiconductor substrate may be placed on the semiconductor substrate support while a first semiconductor processing liquid is dispensed thereon. The wafer may also be spun by the semiconductor substrate support to remove the first semiconductor processing liquid. The transport subsystem may transport the semiconductor substrate to the liquid container where the semiconductor substrate may be immersed in a second semiconductor processing liquid. The semiconductor substrate may then be removed from the second semiconductor processing liquid while vapor is directed at a surface of the semiconductor substrate where the semiconductor substrate contacts a surface of the second semiconductor processing liquid.

Abstract translation: 根据本发明的一个方面，提供半导体衬底处理装置和半导体衬底的处理方法。 半导体衬底处理设备可以包括半导体衬底支撑件，位于半导体衬底支架上方的分配头，液体容器和运输子系统。 半导体衬底可以放置在半导体衬底支撑件上，同时分配第一半导体处理液体。 也可以通过半导体衬底支撑来旋转晶片以移除第一半导体处理液体。 输送子系统可以将半导体衬底输送到半导体衬底浸入第二半导体处理液中的液体容器。 然后可以从第二半导体处理液体中去除半导体衬底，同时蒸汽指向半导体衬底的表面，其中半导体衬底与第二半导体处理液体的表面接触。