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121 条记录 (耗时 0.044 秒)

    ELECTRODE FOR SUPEROXIDE ANION AND SENSOR INCLUDING THE SAME
    81.
    发明申请
    ELECTRODE FOR SUPEROXIDE ANION AND SENSOR INCLUDING THE SAME 审中-公开
    用于超氧化物阴离子和包括其的传感器的电极

    公开(公告)号：US20150160152A1

    公开(公告)日：2015-06-11

    申请号：US14531666

    申请日：2014-11-03

    申请人： Makoto Yuasa ,  Kenichi Oyaizu ,  Aritomo Yamaguchi ,  Masuhide Ishikawa ,  Katsuya Eguchi ,  Tomohiro Kobayashi ,  Satoshi Tsutsui ,  Yuujirou Toyoda

    发明人： Makoto Yuasa ,  Kenichi Oyaizu ,  Aritomo Yamaguchi ,  Masuhide Ishikawa ,  Katsuya Eguchi ,  Tomohiro Kobayashi ,  Satoshi Tsutsui ,  Yuujirou Toyoda

    IPC分类号： G01N27/333 ,  C25D5/00

    CPC分类号： G01N27/3335 ,  C25D5/00

    摘要： An electrode for superoxide anions characterized by comprising a conductive component and, superimposed on a surface thereof, a film resulting from electrolytic polymerization of a metal thiofurylporphyrin/axial ligand complex; and a sensor for measuring a superoxide anion concentration including the same. The electrode for superoxide anions, by virtue of not only the excellent performance of electrode provided with the metal porphyrin complex polymer film, but also the presence of the axial ligand, can prevent poisoning by a catalyst poison such as hydrogen peroxide. Accordingly, in any of in vitro or in vivo environments, this electrode for superoxide anions enables detection of superoxide anion radicals without suffering any influence from a catalyst poison such as hydrogen peroxide. Moreover, quantitative assay of superoxide anions can be performed by the use of this electrode for superoxide anion in combination with a counter electrode or a reference electrode. Thus, this electrode for superoxide anions can find wide applicability in various fields.

    摘要翻译： 一种超氧化物阴离子的电极，其特征在于包括导电成分，并且在其表面上叠加由金属硫代卟啉/轴配体络合物的电解聚合得到的膜; 以及用于测量包含该超氧化物阴离子浓度的超氧化物阴离子浓度的传感器。 超氧化物阴离子电极不仅具有金属卟啉复合聚合物膜的电极的优异性能，而且还具有轴配体的存在，可以防止催化剂毒物如过氧化氢的中毒。 因此，在任何体外或体内环境中，这种超氧化物阴离子电极能够检测超氧阴离子自由基，而不会受到诸如过氧化氢等催化剂毒物的任何影响。 此外，超氧阴离子的定量测定可以通过将该电极与对电极或参比电极结合使用来实现超氧阴离子。 因此，这种超氧阴离子电极可以在各个领域得到广泛的应用。

    Patterning process and resist composition
    82.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号：US08753805B2

    公开(公告)日：2014-06-17

    申请号：US13530896

    申请日：2012-06-22

    申请人： Jun Hatakeyama ,  Tomohiro Kobayashi ,  Koji Hasegawa

    发明人： Jun Hatakeyama ,  Tomohiro Kobayashi ,  Koji Hasegawa

    IPC分类号： G03F7/26

    CPC分类号： G03F7/038 ,  G03F1/32 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/203 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/70466

    摘要： A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance.

    摘要翻译： 通过将抗蚀剂组合物施加到基材上，预烘烤，暴露于高能辐射，烘烤（PEB）和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域来形成负图案。 包含含有被酸不稳定基团，酸发生剂和有机溶剂取代的羟基的环烯烃的重复单元的聚合物的抗蚀剂组合物显示出高的溶解对比度和高耐蚀刻性。

    Patterning process
    83.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号：US08691494B2

    公开(公告)日：2014-04-08

    申请号：US13456705

    申请日：2012-04-26

    申请人： Tomohiro Kobayashi ,  Jun Hatakeyama ,  Takeshi Nagata

    发明人： Tomohiro Kobayashi ,  Jun Hatakeyama ,  Takeshi Nagata

    IPC分类号： G03F7/26

    CPC分类号： G03F7/0397

    摘要： A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer and a (meth)acrylate resin displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.

    摘要翻译： 通过将抗蚀剂组合物涂布在基材上，烘烤，暴露于高能量辐射，烘烤（PEB）和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域，形成负图案。 包含氢化ROMP聚合物和（甲基）丙烯酸酯树脂的抗蚀剂组合物在有机溶剂显影中表现出高的溶解对比度，并且即使当酸不稳定基团通过曝光和PEB脱保护时也显示出高的耐干蚀刻性。

    ELECTRODE FOR SUPEROXIDE ANION AND SENSOR INCLUDING THE SAME
    86.
    发明申请
    ELECTRODE FOR SUPEROXIDE ANION AND SENSOR INCLUDING THE SAME 审中-公开
    用于超氧化物阴离子和包括其的传感器的电极

    公开(公告)号：US20120145562A1

    公开(公告)日：2012-06-14

    申请号：US13270608

    申请日：2011-10-11

    申请人： Makoto Yuasa ,  Kenichi Oyaizu ,  Aritomo Yamaguchi ,  Masuhide Ishikawa ,  Katsuya Eguchi ,  Tomohiro Kobayashi ,  Satoshi Tsutsui ,  Yuujirou Toyoda

    发明人： Makoto Yuasa ,  Kenichi Oyaizu ,  Aritomo Yamaguchi ,  Masuhide Ishikawa ,  Katsuya Eguchi ,  Tomohiro Kobayashi ,  Satoshi Tsutsui ,  Yuujirou Toyoda

    IPC分类号： G01N27/333 ,  G01N27/26

    CPC分类号： G01N27/3335 ,  C25D5/00

    摘要： An electrode for superoxide anions which contains a conductive component and, superimposed on a surface thereof, a film resulting from electrolytic polymerization of a metal thiofurylporphyrin/axial ligand complex; and a sensor for measuring a superoxide anion concentration including the same. The electrode for superoxide anions can prevent poisoning by a catalyst poison such as hydrogen peroxide. Accordingly, in any of in vitro or in vivo environments, this electrode for superoxide anions enables detection of superoxide anion radicals without suffering any influence from a catalyst poison such as hydrogen peroxide. Moreover, quantitative assay of superoxide anions can be performed with this electrode for superoxide anion in combination with a counter electrode or a reference electrode. Thus, this electrode for superoxide anions can find wide applicability in various fields.

    摘要翻译： 一种超氧阴离子的电极，其包含导电成分，并且在其表面上叠加由金属硫卟啉/轴配位体络合物的电解聚合得到的膜; 以及用于测量包含该超氧阴离子浓度的超氧化物阴离子浓度的传感 超氧化物阴离子电极可以防止催化剂毒物如过氧化氢中毒。 因此，在任何体外或体内环境中，这种超氧化物阴离子电极能够检测超氧阴离子自由基，而不会受到诸如过氧化氢等催化剂毒物的任何影响。 此外，超氧化物阴离子的定量测定可以用该电极进行，其中超氧阴离子与对电极或参比电极组合。 因此，这种超氧阴离子电极可以在各个领域得到广泛的应用。

    Semiconductor integrated circuit
    88.
    发明授权
    Semiconductor integrated circuit 失效
    半导体集成电路

    公开(公告)号：US07847587B2

    公开(公告)日：2010-12-07

    申请号：US12400816

    申请日：2009-03-10

    申请人： Tomohiro Kobayashi

    发明人： Tomohiro Kobayashi

    IPC分类号： H03K19/173

    CPC分类号： H01L27/101 ,  G11C17/18 ,  H01L23/5256 ,  H01L27/112 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor integrated circuit has a voltage supply terminal; a first input terminal fed with a first input signal; an output terminal that outputs an output signal; a second input terminal fed with a second input signal; a first MOS transistor having one end connected to the voltage supply terminal and a gate electrode connected to the first input terminal; a second MOS transistor having one end connected to a first potential, an other end connected to the output terminal, and a gate electrode connected to the second input terminal; and a program element acting as a MOS transistor having one end connected to the other end of the second MOS transistor and an other end connected to a second potential higher than the first potential.

    摘要翻译： 半导体集成电路具有电压供给端子; 馈送有第一输入信号的第一输入端; 输出端子，输出输出信号; 馈送有第二输入信号的第二输入端; 第一MOS晶体管，其一端连接到电压源端子，栅极连接到第一输入端子; 第一MOS晶体管，其一端连接到第一电位，另一端连接到所述输出端;以及栅电极，连接到所述第二输入端; 以及作为MOS晶体管的程序元件，其一端连接到第二MOS晶体管的另一端，另一端连接到高于第一电位的第二电位。

    SEMICONDUCTOR INTEGRATED CIRCUIT
    89.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT 失效
    半导体集成电路

    公开(公告)号：US20090267644A1

    公开(公告)日：2009-10-29

    申请号：US12400816

    申请日：2009-03-10

    申请人： Tomohiro Kobayashi

    发明人： Tomohiro Kobayashi

    IPC分类号： H03K19/173 ,  H03K19/094

    CPC分类号： H01L27/101 ,  G11C17/18 ,  H01L23/5256 ,  H01L27/112 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor integrated circuit has a voltage supply terminal; a first input terminal fed with a first input signal; an output terminal that outputs an output signal; a second input terminal fed with a second input signal; a first MOS transistor having one end connected to the voltage supply terminal and a gate electrode connected to the first input terminal; a second MOS transistor having one end connected to a first potential, an other end connected to the output terminal, and a gate electrode connected to the second input terminal; and a program element acting as a MOS transistor having one end connected to the other end of the second MOS transistor and an other end connected to a second potential higher than the first potential.

    摘要翻译： 半导体集成电路具有电压供给端子; 馈送有第一输入信号的第一输入端; 输出端子，输出输出信号; 馈送有第二输入信号的第二输入端; 第一MOS晶体管，其一端连接到电压源端子，栅极连接到第一输入端子; 第一MOS晶体管，其一端连接到第一电位，另一端连接到所述输出端;以及栅电极，连接到所述第二输入端; 以及作为MOS晶体管的程序元件，其一端连接到第二MOS晶体管的另一端，另一端连接到高于第一电位的第二电位。