RESIST COMPOSITION AND PATTERNING PROCESS
    1.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS 有权
    耐腐蚀组合物和方法

    公开(公告)号:US20100136482A1

    公开(公告)日:2010-06-03

    申请号:US12628794

    申请日:2009-12-01

    IPC分类号: G03F7/20 G03F7/004

    摘要: A resist composition is provided comprising (A) an additive polymer of acyl-protected hexafluoroalcohol structure, (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under the action of acid, (C) a photoacid generator, and (D) an organic solvent. The additive polymer is transparent to radiation of wavelength up to 200 nm, and its properties can be tailored by a choice of the polymer structure.

    摘要翻译: 提供了抗蚀剂组合物,其包含(A)酰基保护的六氟醇结构的添加剂聚合物,(B)具有衍生自内酯环,羟基和/或马来酸酐的结构的基础聚合物,所述基础聚合物在碱性显影剂中变得可溶 酸的作用,(C)光致酸发生剂,和(D)有机溶剂。 添加剂聚合物对波长高达200nm的辐射是透明的,并且其性质可以通过选择聚合物结构来定制。

    PATTERNING PROCESS AND RESIST COMPOSITION
    2.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 审中-公开
    绘图工艺和耐腐蚀组合物

    公开(公告)号:US20130065183A1

    公开(公告)日:2013-03-14

    申请号:US13606297

    申请日:2012-09-07

    IPC分类号: G03F7/004 G03F7/20

    摘要: A resist composition is provided comprising a polymer comprising recurring units having a protected hydroxyl group, a photoacid generator, an organic solvent, and a hydroxyl-free polymeric additive comprising fluorinated recurring units. A negative pattern is formed by coating the resist composition, prebaking to form a resist film, exposing, baking, and developing the exposed film in an organic solvent-based developer to selectively dissolve the unexposed region of resist film.

    摘要翻译: 提供了抗蚀剂组合物,其包含聚合物,其包含具有被保护的羟基的重复单元,光致酸产生剂,有机溶剂和包含氟化重复单元的无羟基聚合物添加剂。 通过涂覆抗蚀剂组合物,预烘烤以形成抗蚀剂膜,在有机溶剂基显影剂中曝光,烘烤和显影曝光的膜以选择性地溶解抗蚀剂膜的未曝光区域,形成负图案。

    RESIST COMPOSITION AND PATTERNING PROCESS
    3.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
    耐腐蚀组合物和方法

    公开(公告)号:US20120288796A1

    公开(公告)日:2012-11-15

    申请号:US13469929

    申请日:2012-05-11

    IPC分类号: G03F7/20 G03F7/027

    摘要: A resist composition is provided comprising a polymer comprising recurring units having a hydroxyl group substituted with an acid labile group, an onium salt PAG capable of generating a sulfonic acid, imide acid or methide acid, and an onium salt PAG capable of generating a carboxylic acid. A resist film of the composition is improved in dissolution contrast during organic solvent development, and from which a hole pattern having minimized nano-edge roughness can be formed via positive/negative reversal.

    摘要翻译: 提供了一种抗蚀剂组合物,其包含聚合物,其包含具有被酸不稳定基团取代的羟基的重复单元,能够产生磺酸的鎓盐PAG,酰亚胺酸或甲基化酸,以及能够产生羧酸的鎓盐PAG 。 组合物的抗蚀剂膜在有机溶剂显影期间的溶解对比度得到改善,并且可以通过正/负反转形成具有最小化的纳米边缘粗糙度的孔图案。

    Patterning process and resist composition
    5.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号:US08753805B2

    公开(公告)日:2014-06-17

    申请号:US13530896

    申请日:2012-06-22

    IPC分类号: G03F7/26

    摘要: A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance.

    摘要翻译: 通过将抗蚀剂组合物施加到基材上,预烘烤,暴露于高能辐射,烘烤(PEB)和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域来形成负图案。 包含含有被酸不稳定基团,酸发生剂和有机溶剂取代的羟基的环烯烃的重复单元的聚合物的抗蚀剂组合物显示出高的溶解对比度和高耐蚀刻性。

    RESIST COMPOSITION AND PATTERNING PROCESS
    8.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS 有权
    耐腐蚀组合物和方法

    公开(公告)号:US20100266957A1

    公开(公告)日:2010-10-21

    申请号:US12761202

    申请日:2010-04-15

    IPC分类号: G03F7/004 G03F7/20

    摘要: An additive polymer comprising recurring units of formula (1) is added to a resist composition comprising a base resin, a photoacid generator, and an organic solvent. R1 is hydrogen or methyl, R2 is alkylene or fluoroalkylene, and R3 is fluoroalkyl. The additive polymer is highly transparent to radiation with wavelength of up to 200 nm. Water repellency, water slip, acid lability, hydrolysis and other properties of the polymer may be adjusted by a choice of polymer structure.

    摘要翻译: 将包含式(1)的重复单元的添加剂聚合物加入到包含基础树脂,光致酸发生剂和有机溶剂的抗蚀剂组合物中。 R1是氢或甲基,R2是亚烷基或氟代亚烷基,R3是氟烷基。 添加剂聚合物对波长高达200nm的辐射是高度透明的。 通过选择聚合物结构可以调节聚合物的拒水性,水滑动性,酸性,水解性和其它性能。

    Resist composition and patterning process
    9.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号:US06667145B1

    公开(公告)日:2003-12-23

    申请号:US09694369

    申请日:2000-10-24

    IPC分类号: G03C173

    摘要: A resist composition contains as a base resin a polymer represented by the following formula and having a Mw of 1,000-500,000. R1 is H, methyl or CO2R2, R2 is alkyl, R3 is H, methyl or CH2CO2R2, at least one of R4 to R7 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are independently H or alkyl, at least one of R8 to R11 is a monovalent hydrocarbon group of 2 to 15 carbon atoms containing a —CO2— partial structure, and the reminders are independently H or alkyl, R12 is a polycyclic hydrocarbon group or an alkyl group containing such a polycyclic hydrocarbon group, R13 is an acid labile group, Z is a divalent group of atoms to construct a 5- or 6-membered ring which contains a carboxylate, carbonate or acid anhydride therein, k is 0 or 1, x is a number from more than 0 to 1, “a” to “d” are from 0 to less than 1, x+a+b+c+d=1. The resist composition has significantly improved resolution, substrate adhesiveness, and etching resistance and is very useful in precise microfabrication.

    摘要翻译: 抗蚀剂组合物包含作为基础树脂的由下式表示的聚合物,其Mw为1,000-500,000.R 1是H,甲基或CO 2 R 2,R 2是烷基,R 3是 H,甲基或CH 2 CO 2 R 2,R 4至R 7中的至少一个是含羧基或羟基的一价烃基,并且提醒独立地为H或烷基,R 8, R 11是含有-CO 2 - 部分结构的2至15个碳原子的一价烃基,并且提醒独立地是H或烷基,R 12是多环烃基或含有这种多环的烷基 烃基,R 13是酸不稳定基团,Z是构成其中含有羧酸酯,碳酸酯或酸酐的5-或6-元环的二价原子基团,k是0或1,x是 数字从0到1,“a”到“d”从0到小于1,x + a + b + c + d = 1。 抗蚀剂组合物具有显着提高的分辨率,基底粘附性和耐蚀刻性,并且在精确微细加工中非常有用。

    PATTERNING PROCESS AND RESIST COMPOSITION
    10.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 有权
    绘图工艺和耐腐蚀组合物

    公开(公告)号:US20120328987A1

    公开(公告)日:2012-12-27

    申请号:US13530896

    申请日:2012-06-22

    IPC分类号: G03F7/004 G03F7/20

    摘要: A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance.

    摘要翻译: 通过将抗蚀剂组合物施加到基材上,预烘烤,暴露于高能辐射,烘烤(PEB)和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域来形成负图案。 包含含有被酸不稳定基团,酸发生剂和有机溶剂取代的羟基的环烯烃的重复单元的聚合物的抗蚀剂组合物显示出高的溶解对比度和高耐蚀刻性。