公开(公告)号：US08009464B2

公开(公告)日：2011-08-30

申请号：US12038015

申请日：2008-02-27

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/155

摘要： A magnetic random access memory includes a semiconductor substrate in which a step portion having a side surface and a top face is formed, a gate electrode formed on the side surface of the step portion through a gate insulating film, a drain diffusion layer formed in the top face of the step portion, a source diffusion layer formed in the semiconductor substrate below the drain diffusion layer to be separated from the drain diffusion layer, a magnetoresistive effect element which is connected with the drain diffusion layer, and has a fixed layer, a recording layer and a non-magnetic layer, the magnetization directions of the fixed layer and the recording layer entering a parallel state or an antiparallel state in accordance with a direction of a current flowing through a space between the fixed layer and the recording layer, and a bit line connected with the magnetoresistive effect element.

摘要翻译： 磁性随机存取存储器包括半导体衬底，其中形成有侧表面和顶面的阶梯部分，通过栅极绝缘膜形成在台阶部分的侧表面上的栅电极，形成在栅极绝缘膜中的漏极扩散层 台阶部分的顶面，形成在漏极扩散层下方的与漏极扩散层分离的半导体衬底内的源极扩散层，与漏极扩散层连接的磁阻效应元件，并具有固定层， 记录层和非磁性层，根据流过固定层和记录层之间的空间的电流的方向，固定层和记录层的磁化方向进入平行状态或反平行状态，以及 与磁阻效应元件连接的位线。

公开(公告)号：US07919826B2

公开(公告)日：2011-04-05

申请号：US12108093

申请日：2008-04-23

申请人： Masayoshi Iwayama ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Keiji Hosotani

发明人： Masayoshi Iwayama ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Keiji Hosotani

IPC分类号： H01L21/00

CPC分类号： H01L43/08 ,  H01L27/222 ,  H01L43/12

摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.

摘要翻译： 磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向 可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。 第一堆叠结构的圆周表面基本垂直。 第二堆叠结构具有向上变窄的锥形形状。

公开(公告)号：US07916521B2

公开(公告)日：2011-03-29

申请号：US11960067

申请日：2007-12-19

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  Y10S977/935

摘要： A magnetic random access memory includes a magnetoresistive effect element which includes a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, and in which the magnetization directions in the fixed layer and the recording layer take one of a parallel state and an antiparallel state in accordance with a direction of an electric current supplied between the fixed layer and the recording layer, and a yoke layer which concentrates a magnetic field generated by the electric current, and causes the magnetic field to act on magnetization in the recording layer.

摘要翻译： 磁性随机存取存储器包括磁阻效应元件，其包括固定磁化方向的固定层，磁化方向可逆的记录层和形成在固定层和记录层之间的非磁性层，并且 其中固定层和记录层中的磁化方向根据在固定层和记录层之间供应的电流的方向而处于平行状态和反并联状态;磁轭层集中磁场 由电流产生，并使磁场作用于记录层中的磁化。

公开(公告)号：US07821086B2

公开(公告)日：2010-10-26

申请号：US11563420

申请日：2006-11-27

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/16 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1293

摘要： A semiconductor memory device includes a first write line which is provided in a first direction, a first memory element which is connected to the first write line, a second memory element which is provided to neighbor the first memory element in the first direction, and is connected to the first write line, a first insulation film which is provided on surfaces of the first and second memory elements, and a second insulation film which is provided between the neighboring first and second memory elements and has a lower heat conductivity than the first insulation film.

摘要翻译： 一种半导体存储器件，包括：沿第一方向设置的第一写入线，连接到第一写入线的第一存储器元件，设置成在第一方向上与第一存储元件相邻的第二存储元件， 连接到第一写入线，设置在第一和第二存储元件的表面上的第一绝缘膜，以及设置在相邻的第一和第二存储元件之间并且具有比第一绝缘体更低的热导率的第二绝缘膜 电影。

公开(公告)号：US07741688B2

公开(公告)日：2010-06-22

申请号：US11797530

申请日：2007-05-04

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L21/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C11/155 ,  H01L27/228 ,  H01L27/24

摘要： A magnetic random access memory includes a magnetoresistive effect element having a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, a hollow portion being formed in a center of the recording layer, and the magnetization directions in the fixed layer and the recording layer taking one of a parallel state and an antiparallel state in accordance with a direction of an electric current supplied between the fixed layer and the recording layer, an insulating layer formed in the hollow portion, a wiring connected to one terminal of the magnetoresistive effect element, and a transistor connected to the other terminal of the magnetoresistive effect element.

摘要翻译： 磁性随机存取存储器包括具有固定磁化方向的固定层的磁阻效应元件，磁化方向可逆的记录层和形成在固定层和记录层之间的非磁性层，中空部分 形成在记录层的中心，并且固定层和记录层中的磁化方向根据在固定层和记录层之间提供的电流的方向取平行状态和反平行状态 形成在中空部分中的绝缘层，连接到磁阻效应元件的一个端子的布线和连接到磁阻效应元件的另一个端子的晶体管。

公开(公告)号：US20080308887A1

公开(公告)日：2008-12-18

申请号：US11943831

申请日：2007-11-21

申请人： Yoshiaki Asao ,  Takeshi Kajiyama

发明人： Yoshiaki Asao ,  Takeshi Kajiyama

IPC分类号： H01L29/82

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/79 ,  H01L27/228 ,  H01L27/24

摘要： A semiconductor memory device includes first to third wiring layers formed above a semiconductor substrate, extending in a first direction, and sequentially arranged in a second direction perpendicular to the first direction, a plurality of active areas formed in the semiconductor substrate, and extending in a direction oblique to the first direction, first and second selection transistors formed in each of the active areas, and sharing a source region electrically connected to the second wiring layer, a first magnetoresistive element having one terminal electrically connected to a drain region of the first selection transistor, and the other terminal electrically connected to the first wiring layer, and a second magnetoresistive element having one terminal electrically connected to a drain region of the second selection transistor, and the other terminal electrically connected to the third wiring layer.

摘要翻译： 半导体存储器件包括形成在半导体衬底上的第一至第三布线层，沿第一方向延伸，并且沿垂直于第一方向的第二方向依次布置;形成在半导体衬底中的多个有源区， 形成在每个有源区中的第一和第二选择晶体管，并且共用与第二布线层电连接的源极区;第一磁阻元件，具有与第一选择区的漏极区域电连接的一个端子 晶体管，另一个端子电连接到第一布线层，以及第二磁阻元件，其具有一个端子电连接到第二选择晶体管的漏极区域，另一个端子电连接到第三布线层。

公开(公告)号：US20080265347A1

公开(公告)日：2008-10-30

申请号：US12108093

申请日：2008-04-23

申请人： Masayoshi Iwayama ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Keiji Hosotani

发明人： Masayoshi Iwayama ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Keiji Hosotani

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L43/08 ,  H01L27/222 ,  H01L43/12

摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.

摘要翻译： 磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向 可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。 第一堆叠结构的圆周表面基本垂直。 第二堆叠结构具有向上变窄的锥形形状。

公开(公告)号：US20080205126A1

公开(公告)日：2008-08-28

申请号：US12037425

申请日：2008-02-26

申请人： Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

摘要： A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers in the memory cell array arranged below the magnetoresistive effect element are formed of materials each containing an element selected from a group including W, Mo, Ta, Ti, Zr, Nb, Cr, Hf, V, Co, and Ni.

摘要翻译： 一种磁性随机存取存储器，其是包括具有固定磁化方向的固定层的磁阻效应元件，其磁化方向可逆的记录层和设置在固定层与记录层之间的非磁性层的存储单元阵列 其中，布置在磁阻效应元件下方的存储单元阵列中的所有导电层由各自含有选自包括W，Mo，Ta，Ti，Zr，Nb，Cr，Hf，V，Co和 倪

公开(公告)号：US07148550B2

公开(公告)日：2006-12-12

申请号：US10393278

申请日：2003-03-21

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L29/82

CPC分类号： B82Y25/00 ,  G11C11/15 ,  H01F10/3254

摘要： A semiconductor device includes a memory portion in which a plurality of magneto-resistance effect elements each having a hard-axis of magnetization and an easy-axis of magnetization are arranged and one of binary data is written in all the magneto-resistance effect elements, and a circuit portion to which a write current is supplied to write only the other one of the binary data in only a selected magneto-resistance effect element selected from the magneto-resistance effect elements.

摘要翻译： 一种半导体器件包括存储部，其中布置有具有硬磁化强度的轴和容易磁化轴的多个磁阻效应元件，并且将二进制数据中的一个写入所有磁阻效应元件中， 以及电路部分，其中仅供给从电磁效应元件选择的选定的磁阻效应元件中仅供给二进制数据中的另一个的写入电流。

公开(公告)号：US07061032B2

公开(公告)日：2006-06-13

申请号：US10787133

申请日：2004-02-27

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L29/772

CPC分类号： H01L29/7841 ,  H01L21/84 ,  H01L27/105 ,  H01L27/108 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/1203

摘要： A semiconductor device including: a cell transistor including: a pair of source and drain regions formed in a surface portion of a silicon substrate so as to have a predetermined space therebetween; a channel region sandwiched by the source and drain regions; a gate formed above the channel region with a gate dielectric film being formed therebetween; and a silicon plug formed on the silicon substrate, the silicon plug electrically contacting the source and drain regions, an upper portion of the silicon plug being a first self-aligned silicide portion.

摘要翻译： 一种半导体器件，包括：单元晶体管，包括：一对源极和漏极区，形成在硅衬底的表面部分中，以在其间具有预定的间隔; 夹在源区和漏区之间的沟道区; 形成在通道区域上方的栅极，其间形成有栅极电介质膜; 以及形成在所述硅衬底上的硅插头，所述硅插头电接触所述源极和漏极区域，所述硅插头的上部是第一自对准硅化物部分。