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81.发明授权Antireflective coating composition, antireflective coating, and patterning process 有权抗反射涂料组合物，抗反射涂层和图案化工艺公开(公告)号：US07879530B2
公开(公告)日：2011-02-01
申请号：US12239641
申请日：2008-09-26
CPC分类号： G03F7/091 , C08L33/16 , C09D125/18 , C09D133/16 , Y10S438/952 , C08L2666/04 , C08L2666/02
摘要： A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at α- and α′-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 一种组合物，其包含（A）具有在α-和α'-位取代的具有多个氟原子并具有k = 0.01-0.4的醇结构的聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物 以形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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82.发明申请POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权可聚合的含硫酸钠和聚合物，耐腐蚀组合物和方法公开(公告)号：US20100055608A1
公开(公告)日：2010-03-04
申请号：US12549191
申请日：2009-08-27
IPC分类号： G03F7/20 , C07C309/22 , C08F228/02 , C08F18/00 , G03F7/004
CPC分类号： C08F28/02 , C07C309/12 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D493/08 , C07D493/18 , C08F20/22 , C08F20/36 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C1-C10 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译： 提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是C1-C10有机基团，n是0或1.锍盐在暴露于高能量辐射时产生非常强的磺酸。 还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。
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83.发明申请ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING, AND PATTERNING PROCESS 有权抗反射涂层组合物，抗反射涂层和图案处理公开(公告)号：US20090087799A1
公开(公告)日：2009-04-02
申请号：US12239641
申请日：2008-09-26
CPC分类号： G03F7/091 , C08L33/16 , C09D125/18 , C09D133/16 , Y10S438/952 , C08L2666/04 , C08L2666/02
摘要： A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at α- and α′-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 一种组合物，其包含（A）具有在α和α'位置被取代并具有k = 0.01-0.4的多个氟原子的醇结构的聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物 以形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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公开(公告)号：US07687228B2
公开(公告)日：2010-03-30
申请号：US12071804
申请日：2008-02-26
IPC分类号： G03F7/11 , H01L21/027 , G03F7/40 , C08F20/24
CPC分类号： G03F7/091
摘要： An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided. The antireflection film composition comprising; at least a polymer having a repeating unit represented by the following general formula (I).
摘要翻译： 一种防反射膜组合物，其中蚀刻速度快，因此，当用作抗蚀剂下层时，抗蚀剂图案的膜损失和蚀刻期间图案的变形可以最小化，并且由于交联密度高，致密的 可以在热交联后形成膜，因此可以防止与上层抗蚀剂的混合，显影后的抗蚀剂图案良好。 该防反射膜组合物包含： 至少一种具有由以下通式（I）表示的重复单元的聚合物。
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公开(公告)号：US08288072B2
公开(公告)日：2012-10-16
申请号：US12071806
申请日：2008-02-26
IPC分类号： G03F7/004
CPC分类号： G03F7/091 , G03F7/0046
摘要： A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided.The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).
摘要翻译： 一种抗蚀剂下层膜组合物，其中蚀刻速度快，因此可以缩短蚀刻时间周期，以最小化抗蚀剂图案的膜厚度损失和蚀刻期间图案的变形，因此，图案可以高转印 可以在基板上形成精度和极好的图案。 所述抗蚀剂下层膜组合物至少含有具有下述通式（1）表示的重复单元的聚合物。
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公开(公告)号：US08057982B2
公开(公告)日：2011-11-15
申请号：US12398483
申请日：2009-03-05
CPC分类号： G03F7/40 , G03F7/0046 , G03F7/0397
摘要： A pattern is formed by applying a positive resist composition comprising a polymer comprising hydroxyalkylnaphthalene-bearing recurring units and acid labile group-bearing recurring units onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer to form a first pattern, and causing the resist film to crosslink and cure with the aid of heat or of acid and heat. A second pattern is then formed in the space area of the first pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译： 通过将包含含有羟烷基萘的重复单元和含酸不稳定基团的重复单元的聚合物的正性抗蚀剂组合物应用到基材上以形成抗蚀剂膜，将抗蚀剂膜热处理和曝光以进行辐射，热处理和显影而形成图案 所述抗蚀剂膜具有显影剂以形成第一图案，并且使得所述抗蚀剂膜在热或酸和热的帮助下交联和固化。 然后在第一图案的空间区域中形成第二图案。 双重图案化工艺将图案之间的间距缩小到一半。
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公开(公告)号：US20070207408A1
公开(公告)日：2007-09-06
申请号：US11713763
申请日：2007-03-05
申请人： Jun Hatakeyama , Takeshi Kinsho , Takanobu Takeda
发明人： Jun Hatakeyama , Takeshi Kinsho , Takanobu Takeda
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F222/20 , C08F224/00 , C08F232/00 , C08F232/08 , Y10S430/106 , Y10S430/111
摘要： A polymer is composed of recurring units of hydroxyvinylnaphthalene, (meth)acrylic units having a lactone ring fused to a bridged ring, and (meth)acrylic units having acid labile groups. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development.
摘要翻译： 聚合物由羟基乙烯基萘的重复单元，具有与桥环稠合的内酯环的（甲基）丙烯酸单元和具有酸不稳定基的（甲基）丙烯酸单元组成。 包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度，高分辨率和由于显影过程中控制的膨胀引起的最小线边缘粗糙度。
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88.发明授权Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process 有权可聚合阴离子的锍盐和聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US08057985B2
公开(公告)日：2011-11-15
申请号：US12549191
申请日：2009-08-27
CPC分类号： C08F28/02 , C07C309/12 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D493/08 , C07D493/18 , C08F20/22 , C08F20/36 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C1-C20 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译： 提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是C1-C20有机基团，n是0或1.锍盐在暴露于高能量辐射时产生非常强的磺酸。 还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。
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公开(公告)号：US07491483B2
公开(公告)日：2009-02-17
申请号：US11713763
申请日：2007-03-05
申请人： Jun Hatakeyama , Takeshi Kinsho , Takanobu Takeda
发明人： Jun Hatakeyama , Takeshi Kinsho , Takanobu Takeda
CPC分类号： G03F7/0397 , C08F222/20 , C08F224/00 , C08F232/00 , C08F232/08 , Y10S430/106 , Y10S430/111
摘要： A polymer is composed of recurring units of hydroxyvinylnaphthalene, (meth)acrylic units having a lactone ring fused to a bridged ring, and (meth)acrylic units having acid labile groups. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development.
摘要翻译： 聚合物由羟基乙烯基萘的重复单元，具有与桥环稠合的内酯环的（甲基）丙烯酸单元和具有酸不稳定基的（甲基）丙烯酸单元组成。 包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度，高分辨率和由于显影过程中控制的膨胀引起的最小线边缘粗糙度。
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90.发明申请公开(公告)号：US20080227037A1
公开(公告)日：2008-09-18
申请号：US12071806
申请日：2008-02-26
CPC分类号： G03F7/091 , G03F7/0046
摘要： A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided.The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).
摘要翻译： 一种抗蚀剂下层膜组合物，其中蚀刻速度快，因此可以缩短蚀刻时间周期，以最小化抗蚀剂图案的膜厚度损失和蚀刻期间图案的变形，因此，图案可以高转印 可以在基板上形成精度和极好的图案。 所述抗蚀剂下层膜组合物至少含有具有下述通式（1）表示的重复单元的聚合物。
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