摘要:
A device including a fiber/waveguide and a optical device (PD, LD or so). The end of an optical fiber or a light waveguide is cut slantingly. A transparent resin of a refractive index akin to the fiber/waveguide encloses the fiber/waveguide, the optical device and a space between them. The slanting end cutting and the transparent resin cooperate with each other to annihilate the reflection, returning light perfectly without reducing the coupling coefficient.
摘要:
The invention reduces the costs of a surface mounting type receiver module, transmitter module, and transmitter and receiver module. In an optical communication device comprising an optical fiber, optical parts, and a substrate for optical coupling, the coupling portion between the end portion of the optical fiber and the optical parts is fixed by a semiconductor substrate having a V groove made by etching, and a portion of the optical fiber other than the end portion is fixed by a retaining substrate which is different from the semiconductor substrate.
摘要:
The PD/LD module of the present invention comprises a platform, a straight light guide (waveguide) formed on the platform for guiding transmitting light and receiving light, a light source (LD or LED) positioned at an end of the light guide for emitting transmitting light, a PD mounted just above the light guide for detecting receiving signals and a filter sloping upward on the way of the light guide for reflecting receiving light to the photodiode (PD) and passing transmitting light.
摘要:
This invention provides an analog PD module useful for a large number of channels and a digital PD module useful for a large power signal input because of its reduced distortion. The PD chip is fixed at a spot deviating by L tan .alpha. from the lens center in the direction of a projection of a vector TS from the highest edge (T) to the lowest edge (S), where L is the distance between the lens center and the PD. The fiber should deviate in the contrary direction. The orientation enables a beam emanating from the fiber end to pass the center of the lens and reach the PD by spreading on a direct line.
摘要:
A semiconductor light detecting device in which a housing with an optical fiber is inserted in is secured to a header with a photodiode chip mounted on integral therewith, and a light detecting surface of the photodiode chip is opposed to a light emitting surface of the optical fiber, the photodiode chip having a pn junction, the first region is surrounded by a second region of the second conductivity type formed at a portion of the semiconductor layer. The second region has the same or larger depth as or than that of the first region. Thus, even if a light is directed to the outside of the photo-sensing region, extra charges into the photo-sensing region is prevented. As a result, no optical lens system is necessary, and if an optical lens system is used, an inexpensive optical system may be used. Further, the device itself can be fabricated at low costs and easily.
摘要:
A magnetic field and electric current measuring device which uses bismuth silicon oxide (Bi.sub.12 SiO.sub.20) or bismuth germanium oxide (Bi.sub.12 GeO.sub.20) as a Faraday cell, and which is so adapted that polarized light which enters the cell is passed back and forth through the cell along the optic axis thereof to cancel any change in optical rotatory power ascribable to a variation in temperature. A magnetic field applied in the direction of the optic axis of the Faraday cell is measured based on the angle of rotation of the polarization plane of the polarized light. The surface of the Faraday cell may be coated with a transparent and electrically conductive thin film to eliminate the effects of external electric fields.
摘要:
A voltage and electric field measuring device is disclosed. The device uses light, including a polarizer, an electro-optic crystal consisting of a material having an optical rotatory power, and an analyzer arranged in the stated order in the direction of advancement of applied light, with a quarter-wave plate being disposed between the polarizer and crystal or between the crystal and analyzer. The angle of orientation .psi. of the analyzer, relative to the optical axis of the crystal, is set to the product of .theta. and l, where .theta. represents the optical rotatory power, with respect to the applied light, of the crystal near a point at the center of a range of varying temperatures at the installation environment, and l represents the thickness of the crystal measured in the direction of advancement of light. The specified relation between .psi. and .theta..multidot.l maximizes the temperature stability of the device.
摘要:
A voltage and electric field measuring device using light as an operating parameter. An electro-optic crystal, a quarter-wave plate, and a polarization analyzer are arranged in that order in the direction of advancement of applied light. A voltage may be applied to the electro-optic crystal through electrodes arranged thereon. The electro-optic crystal belongs to a cubic system, such as bismuth silicon oxide or bismuth germanium oxide.
摘要:
An optical receiver includes a light-receiving part and a control part. The light-receiving part includes an APD, a PIN-PD, and a branching optical device. First signal light is incident on the light-receiving part and is divided into second signal light and third signal light which are incident on the APD and the PIN-PD, respectively, by the branching optical device. Due to this structure, the third signal light is incident on the PIN-PD without the quantity thereof being varied depending on the polarization state of the first signal light. The control part generates a supply voltage at which a desired avalanche multiplication factor is obtained in the APD on the basis of the output current from the PIN-PD. According to the above-described structure, the avalanche multiplication factor of the APD is accurately controlled on the basis of the output current of the PIN-PD.
摘要:
Disclosed is a photodiode array which includes a plurality of p-i-n photodiodes arrayed on a semi-insulative semiconductor substrate, each photodiode including an n-type semiconductor layer grown on the substrate, an i-type semiconductor layer grown on the n-type semiconductor layer, a p-type semiconductor layer grown on the i-type semiconductor layer, an n-type electrode provided on the n-type semiconductor layer in a region exposed by partially removing the p-type semiconductor layer and the i-type semiconductor layer, and a p-type electrode provided on the p-type semiconductor layer. A trench is provided between the two adjacent photodiodes by partially removing the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer. Consequently, the size and pitch of the photodiodes can be decreased and crosstalk between the photodiodes can be reduced. Also disclosed is an optical receiver device including the photodiode array.