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    Infrared laser optical element and manufacturing method therefor
    1.
    发明授权
    Infrared laser optical element and manufacturing method therefor 有权

    公开(公告)号：US06603601B2

    公开(公告)日：2003-08-05

    申请号：US09986133

    申请日：2001-11-07

    申请人： Hiromi Iwamoto ,  Hirokuni Nanba

    发明人： Hiromi Iwamoto ,  Hirokuni Nanba

    IPC分类号： F21V904

    CPC分类号： C23C14/022 ,  C23C14/0694 ,  G02B1/10

    摘要： The present invention provides an infrared laser optical element, in which a dense optical thin film with a low laser absorption and high moisture resistance is formed on the surface thereof, and a manufacturing method for the same. In this infrared laser optical element, the main surface of the optical substrate is smoothed, a BaF2 film formed on said main surface thereof and then a ZnSe film formed on said BaF2 film. The smoothing treatment for the main surface of the optical substrate is carried out by irradiating Xe gas ion beams. The BaF2 and the ZnSe films formed on said BaF2 film are formed on the main surface of the optical substrate, which has been smoothed, by Xe gas ion assisted vapor deposition. Superior performance can be achieved if the series of treatments are carried out under the specified conditions.

    Method for preparing single-crystal ZnSe
    6.
    发明授权
    Method for preparing single-crystal ZnSe 失效
    制备单晶ZnSe的方法

    公开(公告)号：US4866007A

    公开(公告)日：1989-09-12

    申请号：US169688

    申请日：1988-03-18

    申请人： Tsunemasa Taguchi ,  Isao Kidoguchi ,  Hirokuni Nanba

    发明人： Tsunemasa Taguchi ,  Isao Kidoguchi ,  Hirokuni Nanba

    IPC分类号： C30B1/08 ,  C30B1/02 ,  C30B13/00 ,  C30B29/48

    CPC分类号： C30B1/02 ,  C30B29/48 ,  Y10S117/906

    摘要： A method for preparing single-crystal ZnSe comprising the steps of:working polycrystalline ZnSe into a rod-shaped starting material;placing the starting material in a reaction vessel;filling the atmosphere of the reaction vessel with an inert gas, nitrogen, H.sub.2 Se gas, or a mixture thereof at from about 0.1 to about 100 Torr; andconverting the polycrystalline ZnSe starting material to single-crystal ZnSe, while maintaining a solid phase, by moving the reaction vessel at a rate of from about 0.05 to about 5 mm/day through a temperature profile consisting of a cool zone AB having a temperature T.sub.1 in the range of from about room temperature to about 100.degree. C., a temperature increasing zone BC having a temperature gradient of from about 50.degree. to about 200.degree. C./cm, a hot zone CD having a temperature T.sub.2 in the range of from about 700.degree. to about 900.degree. C., a temperature decreasing zone DE having a temperature gradient of from about -200.degree. to about -50.degree. C./cm, and a cool zone EF having a temperature T.sub.1 in the range of from about room temperature to about 100.degree. C.

    Method for forming a doped ZnSe single crystal
    7.
    发明授权
    Method for forming a doped ZnSe single crystal 失效
    形成掺杂ZnSe单晶的方法

    公开(公告)号：US5169799A

    公开(公告)日：1992-12-08

    申请号：US684508

    申请日：1991-04-15

    申请人： Tsunemasa Taguchi ,  Hirokuni Nanba

    发明人： Tsunemasa Taguchi ,  Hirokuni Nanba

    IPC分类号： C30B1/02 ,  C30B31/04

    CPC分类号： C30B1/02 ,  C30B29/48 ,  C30B31/04 ,  Y10S117/906

    摘要： A method of forming a ZnSe single crystal. The method includes placing a piece of ZnSe polycrystal in a sealed reactor tube with its atmosphere formed of certain gases. The reactor tube is moved through different temperature zones to convert the polycrystal to a single crystal. The single crystal thus formed is cut to produce a single crystal chip or wafer. An impurity is then implanted in the chip or wafer. Lastly the chip or wafer is heated to diffuse the impurity throughout the chip or wafer.

    摘要翻译： 一种形成ZnSe单晶的方法。 该方法包括将ZnSe多晶体放置在其中由某些气体形成的气氛的密封的反应器管中。 将反应器管移动通过不同的温度区以将多晶转化为单晶。 将如此形成的单晶切割成单晶芯片或晶片。 然后将杂质植入芯片或晶片。 最后，芯片或晶片被加热以使整个芯片或晶片上的杂质扩散。