公开(公告)号：US20050277057A1

公开(公告)日：2005-12-15

申请号：US11138880

申请日：2005-05-27

申请人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

发明人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

IPC分类号： G03C1/492 ,  G03F7/039

CPC分类号： G03F7/0392 ,  G03F7/0397

摘要： A resist material has a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 1 and a second unit represented by a general formula of the following Chemical Formula 2: wherein R1, R2, R3, R7, R8 and R9 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.

摘要翻译： 抗蚀剂材料具有含有包含由以下化学式1的通式表示的第一单元与由下列化学式2的通式表示的第二单元的共聚物的化合物的基础聚合物：其中R 1 R 2，R 3，R 3，R 7，R 8和R 9， 相同或不同，为氢原子，氟原子或直链烷基，支链或环状烷基或碳数不小于1且不大于1的氟化烷基 20; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5和R 6相同或不同，为氢原子，直链烷基，支链或环状烷基或氟化烷基， 碳数为1以上且20以下，或被酸释放的保护基。

公开(公告)号：US06908729B2

公开(公告)日：2005-06-21

申请号：US10278978

申请日：2002-10-24

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/039 ,  G03F7/004 ,  G03F7/40 ,  H01L21/027 ,  G03F7/26

CPC分类号： G03F7/40 ,  G03F7/0045

摘要： A resist film is formed from a chemically amplified resist material containing a base polymer including at least one ester out of acrylate and methacrylate and an acid generator that generates an acid when irradiated with light. The resist film is selectively irradiated for pattern exposure with extreme UV of a wavelength of a 1 nm through 30 nm band, and is developed after the pattern exposure, so as to form a resist pattern from an unexposed portion of the resist film. The resist pattern is then annealed, so as to smooth roughness having been caused on the resist pattern.

摘要翻译： 抗蚀剂膜由包含至少一种丙烯酸酯和甲基丙烯酸酯的基础聚合物和在用光照射时产生酸的酸产生剂的化学放大抗蚀剂材料形成。 选择性地照射抗蚀剂膜用于波长为1nm至30nm带的极紫外的图案曝光，并且在图案曝光之后显影，以便从抗蚀剂膜的未曝光部分形成抗蚀剂图案。 然后将抗蚀剂图案退火，以便在抗蚀剂图案上引起光滑的粗糙度。

公开(公告)号：US20050074704A1

公开(公告)日：2005-04-07

申请号：US10958299

申请日：2004-10-06

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/20 ,  H01L21/027 ,  G03B27/00 ,  G03F7/00

CPC分类号： G03F7/70341

摘要： The semiconductor fabrication apparatus of this invention includes an exposure section provided within a chamber for exposing a design pattern on a resist film applied on a wafer, and a liquid recycle section for supplying, onto the wafer, a liquid for use in immersion lithography for increasing the numerical aperture of exposing light during exposure while recycling the liquid. The liquid recycle section includes a liquid supply part for supplying the liquid onto the resist film of the wafer, a liquid discharge part for discharging and recovering the liquid from above the wafer, and an impurity removal part for containing the liquid and removing an impurity included in the liquid.

摘要翻译： 本发明的半导体制造装置包括设置在室内的曝光部分，用于曝光施加在晶片上的抗蚀剂膜上的设计图案;以及液体再循环部分，用于向晶片提供用于浸没式光刻的液体以增加 曝光期间暴露光的数值孔径，同时回收液体。 液体循环部分包括用于将液体供应到晶片的抗蚀剂膜上的液体供应部分，用于从晶片上方排放和回收液体的液体排出部分，以及用于容纳液体并除去杂质的杂质去除部分 在液体中。

公开(公告)号：US20050058935A1

公开(公告)日：2005-03-17

申请号：US10932316

申请日：2004-09-02

申请人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

发明人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

IPC分类号： C07C311/11 ,  C07C311/10 ,  C07C311/12 ,  C07C311/13 ,  G03F7/004 ,  G03F7/039 ,  G03C1/76

CPC分类号： C08F220/18 ,  C08F212/02 ,  C08F228/02 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/108 ,  Y10S430/111

摘要： A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.

摘要翻译： 抗蚀剂材料的基础聚合物包括由以下化学式3的通式表示的单元：其中R 1，R 2和R 3相同或不同，为氢原子，氟 原子，直链烷基，支链或环状烷基或碳数不小于1且不大于20的氟化烷基; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5和R 6相同或不同，为氢原子，直链烷基，支链或环状烷基，碳数不小于1且不大于1的氟化烷基 或者由酸释放的保护基。

公开(公告)号：US20050038261A1

公开(公告)日：2005-02-17

申请号：US10496014

申请日：2002-11-28

申请人： Tsuneaki Maesawa ,  Fumiyoshi Urano ,  Masayuki Endo ,  Masaru Sasago

发明人： Tsuneaki Maesawa ,  Fumiyoshi Urano ,  Masayuki Endo ,  Masaru Sasago

IPC分类号： C07D209/48 ,  C07D487/04 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C07D43/02

CPC分类号： C07D209/48 ,  C07D487/04 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121

摘要： The present invention relates to a novel bisimide compound useful as an acid generator for a chemically amplified resist composition used in manufacturing of semiconductor element and the like or a raw material for synthesizing heat resistant polymers, an acid generator and a resist composition using said compound and a method for pattern formation using said composition, and further relates to a synthetic n intermediate for a bisimide compound and a bis(N-hydroxy)phthalimide compound useful as an intermediate for a functional compound such as a heat resistant polymer or photosensitive material, and provides a bisimide compound shown by the general formula [1]: (wherein R and A1 are as defined in claim 1.)

摘要翻译： 本发明涉及用作半导体元件等的制造中使用的化学增幅抗蚀剂组合物的酸发生剂的新型双酰亚胺化合物或使用该化合物的酸产生剂和抗蚀剂组合物， 使用所述组合物的图案形成方法，还涉及用作双酰亚胺化合物的合成n中间体和可用作功能性化合物如耐热聚合物或感光材料的中间体的双（N-羟基）邻苯二甲酰亚胺化合物，以及 提供由通式[1]表示的双酰亚胺化合物：（其中R和A1如权利要求1所定义）

公开(公告)号：US06764811B2

公开(公告)日：2004-07-20

申请号：US10032542

申请日：2002-01-02

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03C500

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/2004 ,  G03F7/2039 ,  Y10S430/128

摘要： A resist film is formed from a chemically amplified resist material including a base polymer having a lactone group and having neither a hydroxyl group nor a carboxylic group as an adhesion group bonded to a polymer side chain; and an acid generator for generating an acid through irradiation with light. The resist film is irradiated with extreme UV of a wavelength of a 1 nm through 30 nm band for pattern exposure. The resist film is developed after the pattern exposure, so as to form a resist pattern from an unexposed portion of the resist film.

摘要翻译： 抗蚀剂膜由化学增幅抗蚀剂材料形成，该抗蚀剂材料包括具有内酯基团的基础聚合物，既不具有羟基也不具有羧基，作为与聚合物侧链键合的粘合基团; 以及通过照射光产生酸的酸发生剂。 用波长为1nm至30nm波段的极紫外线照射抗蚀剂膜用于图案曝光。 在图案曝光之后显影抗蚀剂膜，以便从抗蚀剂膜的未曝光部分形成抗蚀剂图案。

公开(公告)号：US5741628A

公开(公告)日：1998-04-21

申请号：US725949

申请日：1996-10-07

申请人： Takahiro Matsuo ,  Kazuhiro Yamashita ,  Masayuki Endo ,  Masaru Sasago

发明人： Takahiro Matsuo ,  Kazuhiro Yamashita ,  Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/26 ,  G03F7/32 ,  H01L21/027 ,  H01L21/033 ,  G03F7/004

CPC分类号： G03F7/322 ,  G03F7/265 ,  G03F7/32 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/0337

摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid in response to the radiation of KrF excimer laser light and which reacts with the acid. If the resist film is irradiated with the KrF excimer laser light through a mask, the acid is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.

摘要翻译： 通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生酸并与酸反应。 如果通过掩模用KrF准分子激光照射抗蚀剂膜，则在抗蚀剂膜的暴露部分的表面中产生酸，使得暴露部分的表面由酸形成亲水性。 如果将水蒸汽供应到抗蚀剂膜的表面，则水从暴露部分的表面扩散到深部。 如果甲基三乙氧基硅烷的蒸气在相对湿度为95％的空气中被喷涂在抗蚀剂膜的表面上，则在暴露部分的表面上选择性地形成厚度足够大的氧化物膜。

公开(公告)号：US4782368A

公开(公告)日：1988-11-01

申请号：US70715

申请日：1987-07-07

申请人： Kazufumi Ogawa ,  Masaru Sasago ,  Masayuki Endo ,  Takeshi Ishihara

发明人： Kazufumi Ogawa ,  Masaru Sasago ,  Masayuki Endo ,  Takeshi Ishihara

IPC分类号： G03F9/00 ,  G03B27/52

CPC分类号： G03F9/70

摘要： Disclosed is an exposure apparatus used in a photolithographic process in fabrication of semiconductor devices. More particularly, in the exposure apparatus using an excimer laser, the beam splitter, mirror and lens for correction for chromatic aberration are combined in the alignment optical system. Furthermore, a mirror is disposed at the opposite side of the image pickup camera of the alignment key by way of the beam splitter.

摘要翻译： 公开了一种在制造半导体器件的光刻工艺中使用的曝光装置。 更具体地，在使用准分子激光的曝光装置中，在对准光学系统中组合用于色差校正的分束器，反射镜和透镜。 此外，镜子通过分束器设置在对准键的图像拾取相机的相对侧。

公开(公告)号：US20110189616A1

公开(公告)日：2011-08-04

申请号：US13085232

申请日：2011-04-12

申请人： Masayuki ENDO ,  Masaru Sasago

发明人： Masayuki ENDO ,  Masaru Sasago

IPC分类号： G03F7/20

CPC分类号： G03F7/0035 ,  G03F7/2041

摘要： After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.

摘要翻译： 在基板上形成下层膜，中间层膜和第一抗蚀剂膜之后，通过进行第一曝光来形成第一抗蚀剂图案。 然后，在通过将第一抗蚀剂图案转印到中间层膜上形成第一中间层图案之后，在其上形成第二抗蚀剂膜，并通过进行第二曝光形成第二抗蚀剂图案。 此后，通过将第二抗蚀剂图案转印到中间层膜上来形成第二中间层图案。 在除去第二抗蚀剂膜之后，通过使用第二中间层图案作为掩模来蚀刻下层膜，以形成下层图案。

公开(公告)号：US07939242B2

公开(公告)日：2011-05-10

申请号：US12046996

申请日：2008-03-12

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/26 ,  G03F7/20 ,  G03F7/40

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： A barrier film material includes, in addition to an alkali-soluble polymer, a multivalent carboxylic acid compound having a plurality of carboxyl groups or a multivalent alcohol compound. Thus, the multivalent carboxylic acid compound or the multivalent alcohol compound is adhered onto the surface of a resist film, and hence, particles having been adhered to the surface of the resist film are removed in removing the barrier film. Also, in the case where the barrier film is removed simultaneously with development, the resist film can be prevented from remaining partly undissolved.

摘要翻译： 除了碱溶性聚合物之外，阻挡膜材料还包含具有多个羧基或多价醇化合物的多价羧酸化合物。 因此，多价羧酸化合物或多价醇化合物附着在抗蚀剂膜的表面上，因此除去阻挡膜后除去附着在抗蚀剂膜表面的颗粒。 此外，在显影时同时除去阻挡膜的情况下，可以防止部分未溶解的抗蚀剂膜。