Solder application technique
    81.
    发明授权
    Solder application technique 失效
    焊接应用技术

    公开(公告)号:US06279811B1

    公开(公告)日:2001-08-28

    申请号:US09570404

    申请日:2000-05-12

    CPC classification number: B23K1/20 B23K35/001 B23K2101/36 H01C7/108 H01C7/12

    Abstract: A method of joining an end face of a first electric component to an end face of a second electric component includes applying a first metal layer to the end face of the first electric component to form a first metallized layer and applying a second metal layer to the end face of the second electric component to form a second metallized layer. A first fusible alloy layer is applied to the first metallized layer by melting a fusible alloy and propelling the melted fusible alloy onto the first metallized layer, and a second fusible alloy layer is applied to the second metallized layer by melting a fusible alloy and propelling the melted fusible alloy to the second metallized layer. The method further includes contacting the first fusible alloy layer to the second fusible alloy layer. Next, the end faces and fusible alloy layers are heated to melt the fusible alloy layers. After heating, the end faces and fusible alloy layers are cooled to form a bond between the end faces.

    Abstract translation: 将第一电气部件的端面与第二电气部件的端面接合的方法包括将第一金属层施加到第一电气部件的端面,以形成第一金属化层,并将第二金属层施加到 第二电气部件的端面以形成第二金属化层。 通过熔化可熔合金并将熔融的可熔合金推进到第一金属化层上,将第一熔融合金层施加到第一金属化层,并且通过熔化可熔合金将第二熔融合金层施加到第二金属化层上,并推进 熔融的可熔合金到第二金属化层。 该方法还包括使第一可熔合金层与第二熔融合金层接触。 接下来,加热端面和可熔合金层以熔化可熔合金层。 加热后,端面和熔融合金层被冷却以在端面之间形成结合。

    Process for the preparation of homogeneous metal oxide varistors
    82.
    发明授权
    Process for the preparation of homogeneous metal oxide varistors 失效
    制备均质金属氧化物变阻器的方法

    公开(公告)号:US4575440A

    公开(公告)日:1986-03-11

    申请号:US581927

    申请日:1984-02-21

    Inventor: Frank C. Palilla

    CPC classification number: H01C7/112 H01C7/108 Y10T29/49101

    Abstract: A process for making a homogeneous metal oxide varistor powder is described. The ingredients desired in a varistor which are water and acid soluble and dissolved in water and acid respectfully to make a solution. The remaining ingredients which are water and acid insoluble are then suspended in the solution to make a homogeneous slurry. The slurry is dried, calcined, reslurried, dried, pressed and sintered. The sintered body has electrical leads attached then encapsulated in an epoxy resin to make an encapsulated varistor package.

    Abstract translation: 描述了制造均匀金属氧化物变阻器粉末的方法。 在压敏电阻中所需的成分是水和酸溶解并溶于水中并酸性地酸以制备溶液。 然后将剩余的水和不溶于水的成分悬浮在溶液中以制成均匀的浆料。 将浆料干燥,煅烧,再浆化,干燥,压制和烧结。 烧结体具有电引线,然后封装在环氧树脂中以制成封装的变阻器封装。

    Composite function element and process for producing the same
    83.
    发明授权
    Composite function element and process for producing the same 失效
    复合功能元件及其制造方法

    公开(公告)号:US4475091A

    公开(公告)日:1984-10-02

    申请号:US265707

    申请日:1981-05-21

    CPC classification number: H01C7/108 C04B35/475

    Abstract: This invention relates to a composite function element which includes a high resistance thin film layer containing the constitutional elements of a perovskite type oxide and specified impurity elements at the grain boundary of a sintered body, said sintered body comprises an agglomerate of n type semiconductor particles and to a process for producing said composite function element. The composite function element has a composite function such that it acts as a varistor passing high voltages at a high voltage and as a capacitor passing the currents of abnormal frequency zone at a low voltage, so that the functions of two elements, a varistor and a capacitor, can be fulfilled simultaneously with only one element. Therefore, its extensive application in uses such as, for example, prevention of erroneous operation of microcomputer-controlled instruments can be expected.

    Abstract translation: 本发明涉及一种复合功能元件,其包括含有钙钛矿型氧化物的结构元素和在烧结体的晶界处的特定杂质元素的高电阻薄膜层,所述烧结体包括n型半导体颗粒的附聚物和 涉及一种生产所述复合功能元件的方法。 复合功能元件具有复合功能,使其作为在高电压下通过高电压的压敏电阻和作为通过低电压的异常频率区域的电流的电容器,使得两个元件的功能,即压敏电阻和 电容器只能与一个元件同时完成。 因此,可以预期其在诸如例如防止微机控制的仪器的错误操作的用途中的广泛应用。

    High temperature cadmium boracite semiconductor device
    84.
    发明授权
    High temperature cadmium boracite semiconductor device 失效
    高温镉硅酸盐半导体器件

    公开(公告)号:US4228454A

    公开(公告)日:1980-10-14

    申请号:US880484

    申请日:1978-02-23

    CPC classification number: H01C7/13 H01C7/108

    Abstract: A cadmium boracite crystal electronic device, having at least one silver containing electrode, which is useful as a symmetric current controlling device for DC, DC pulse and AC circuits, an asymmetric current controlling device for DC and DC pulse circuits, a current rectifier for low frequency, AC, and as a temperature sensor.

    Abstract translation: 具有至少一个含银电极的镉蓝宝石晶体电子器件,其用作DC,DC脉冲和AC电路的对称电流控制装置,用于DC和DC脉冲电路的非对称电流控制装置,用于低电压的电流整流器 频率,AC和温度传感器。

    Method for making a low avalanche voltage metal oxide varistor
    85.
    发明授权
    Method for making a low avalanche voltage metal oxide varistor 失效
    制造低雪崩电压金属氧化物变阻器的方法

    公开(公告)号:US3886097A

    公开(公告)日:1975-05-27

    申请号:US41481473

    申请日:1973-11-12

    CPC classification number: H01C7/108 Y10T29/49101

    Abstract: A method of making low avalanche metal oxide varistors is described. Metal oxide powders are isostatically pressed to form a rod. The rod is fired, and then sliced into a plurality of discs. Electrodes are applied to the major faces of the discs, to produce discrete varistors. Thinner discs can be made by this technique than can be made by uniaxially pressing discrete discs, to get lower avalanche voltages. Also, comparative data is presented showing that varistors from slices of this isostatically pressed rod inherently have lower avalanche voltages than uniaxially pressed discrete disc varistors.

    Abstract translation: 描述了制造低雪崩金属氧化物变阻器的方法。 金属氧化物粉末被等压压制成棒。 将棒烧制,然后切成多个盘。 电极被施加到盘的主面上,以产生分立的压敏电阻。 可以通过这种技术制造更薄的圆盘,而不是通过单轴压缩离散盘来制造,以获得更低的雪崩电压。 此外,提供了比较数据,显示来自该等静压棒的压敏电阻固有地具有比单轴压缩的离散盘式压敏电阻更低的雪崩电压。

    Vanadium based resistor compositions
    86.
    发明授权
    Vanadium based resistor compositions 失效
    基于VANADIUM的电阻组合物

    公开(公告)号:US3836340A

    公开(公告)日:1974-09-17

    申请号:US21464872

    申请日:1972-01-03

    Applicant: DU PONT

    Inventor: CONWICKE J

    CPC classification number: H01C7/108 C03C3/23 H01C7/047

    Abstract: Screen printable, air fireable compositions comprising a vanadium glass, boron, and as optional components, noble metal and/or a low melting inorganic binder, wherein the vanadium glass contains 5-55 percent vanadium metal and from a small but effective amount up to 10 percent of fluorine and, sulfur. Various electronic devices are readily made from these compositions. A unique feature of the devices is their sensitivity to voltage as well as temperature. Consequently, the fired compositions are particularly useful whenever switching devices are needed, e.g., as transient suppressors in electronic equipment.

    Abstract translation: 包含钒玻璃,硼以及作为任选组分的贵金属和/或低熔点无机粘合剂的可丝网印刷的空气可燃组合物,其中钒玻璃含有5-55%的钒金属,并且从少量但有效量至多10 氟和硫的百分比。 各种电子器件很容易由这些组合物制成。 器件的独特之处在于它们对电压和温度的敏感性。 因此,当需要开关装置时,例如作为电子设备中的瞬态抑制器,烧制的组合物是特别有用的。

    Memory device having lead dioxide particles therein
    87.
    发明授权
    Memory device having lead dioxide particles therein 失效
    具有二氧化铅的颗粒的记忆装置

    公开(公告)号:US3719933A

    公开(公告)日:1973-03-06

    申请号:US12867171

    申请日:1971-03-29

    Abstract: A memory device for memorizing an electric signal. Said memory device has an organic resin film having lead dioxide particles dispersed therein, a positive electrode, and a negative electrode. The memory device has a high electrical resistance state and a low electrical resistance state. An applied electric signal at a critical voltage and with forward polarity can transform the memory device from the high electrical resistance state to the low electrical resistance state. An applied electric erasing signal at a pre-determined voltage with reverse polarity can return the memory device from the low electrical resistance state to the high electrical resistance state.

    Abstract translation: 一种用于存储电信号的存储装置。 所述记忆装置具有分散有二氧化铅颗粒的有机树脂膜,正极和负极。 存储器件具有高电阻状态和低电阻状态。 在临界电压和正极性下施加的电信号可以将存储器件从高电阻状态转换到低电阻状态。 以相反极性的预定电压施加的电擦除信号可以将存储器件从低电阻状态返回到高电阻状态。

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