Abstract:
A method of joining an end face of a first electric component to an end face of a second electric component includes applying a first metal layer to the end face of the first electric component to form a first metallized layer and applying a second metal layer to the end face of the second electric component to form a second metallized layer. A first fusible alloy layer is applied to the first metallized layer by melting a fusible alloy and propelling the melted fusible alloy onto the first metallized layer, and a second fusible alloy layer is applied to the second metallized layer by melting a fusible alloy and propelling the melted fusible alloy to the second metallized layer. The method further includes contacting the first fusible alloy layer to the second fusible alloy layer. Next, the end faces and fusible alloy layers are heated to melt the fusible alloy layers. After heating, the end faces and fusible alloy layers are cooled to form a bond between the end faces.
Abstract:
A process for making a homogeneous metal oxide varistor powder is described. The ingredients desired in a varistor which are water and acid soluble and dissolved in water and acid respectfully to make a solution. The remaining ingredients which are water and acid insoluble are then suspended in the solution to make a homogeneous slurry. The slurry is dried, calcined, reslurried, dried, pressed and sintered. The sintered body has electrical leads attached then encapsulated in an epoxy resin to make an encapsulated varistor package.
Abstract:
This invention relates to a composite function element which includes a high resistance thin film layer containing the constitutional elements of a perovskite type oxide and specified impurity elements at the grain boundary of a sintered body, said sintered body comprises an agglomerate of n type semiconductor particles and to a process for producing said composite function element. The composite function element has a composite function such that it acts as a varistor passing high voltages at a high voltage and as a capacitor passing the currents of abnormal frequency zone at a low voltage, so that the functions of two elements, a varistor and a capacitor, can be fulfilled simultaneously with only one element. Therefore, its extensive application in uses such as, for example, prevention of erroneous operation of microcomputer-controlled instruments can be expected.
Abstract:
A cadmium boracite crystal electronic device, having at least one silver containing electrode, which is useful as a symmetric current controlling device for DC, DC pulse and AC circuits, an asymmetric current controlling device for DC and DC pulse circuits, a current rectifier for low frequency, AC, and as a temperature sensor.
Abstract:
A method of making low avalanche metal oxide varistors is described. Metal oxide powders are isostatically pressed to form a rod. The rod is fired, and then sliced into a plurality of discs. Electrodes are applied to the major faces of the discs, to produce discrete varistors. Thinner discs can be made by this technique than can be made by uniaxially pressing discrete discs, to get lower avalanche voltages. Also, comparative data is presented showing that varistors from slices of this isostatically pressed rod inherently have lower avalanche voltages than uniaxially pressed discrete disc varistors.
Abstract:
Screen printable, air fireable compositions comprising a vanadium glass, boron, and as optional components, noble metal and/or a low melting inorganic binder, wherein the vanadium glass contains 5-55 percent vanadium metal and from a small but effective amount up to 10 percent of fluorine and, sulfur. Various electronic devices are readily made from these compositions. A unique feature of the devices is their sensitivity to voltage as well as temperature. Consequently, the fired compositions are particularly useful whenever switching devices are needed, e.g., as transient suppressors in electronic equipment.
Abstract:
A memory device for memorizing an electric signal. Said memory device has an organic resin film having lead dioxide particles dispersed therein, a positive electrode, and a negative electrode. The memory device has a high electrical resistance state and a low electrical resistance state. An applied electric signal at a critical voltage and with forward polarity can transform the memory device from the high electrical resistance state to the low electrical resistance state. An applied electric erasing signal at a pre-determined voltage with reverse polarity can return the memory device from the low electrical resistance state to the high electrical resistance state.
Abstract:
A metal oxide varistor (MOV) device including a MOV chip, electrically conductive first and second electrodes disposed on opposite sides of the MOV chip, and electrically conductive first and second leads connected to the first and second electrodes, respectively, wherein the first and second electrodes are formed of a material having a melting point greater than 1100 degrees Celsius.
Abstract:
An electrical assembly comprising an electrical connector assembly that may include: a utility device comprising a plurality of pins; a socket attached to a cord, the socket comprising a plurality of receptacles to receive the plurality of pins; and one or more metal-oxide varistors (MOVs) disposed inside the socket, where the one or more MOVs are electrically connected to the plurality of pins when the plurality of pins are received by the plurality of receptacles.