公开(公告)号：US20050110379A1

公开(公告)日：2005-05-26

申请号：US11007243

申请日：2004-12-09

申请人： Hiroyuki Kyushima ,  Akira Atsumi ,  Hideki Shimoi

发明人： Hiroyuki Kyushima ,  Akira Atsumi ,  Hideki Shimoi

IPC分类号： H01J43/00 ,  H01J43/04 ,  H01J43/22

CPC分类号： H01J31/507 ,  H01J43/045 ,  H01J43/22

摘要： A dynode (8) constituting an electron multiplier or a photomultiplier is provided with eight rows of channels (15) each defined by an outer frame (16) and a partitioning part (17) of the dynode (8). In each channel (15), a plurality of electron multiplying holes (14) are arranged. In specified positions of the outer frame (16) and the partitioning part (17) of the dynode (8), glass receiving parts (21) wider than the outer frame (16) and the partitioning part (17) are provided integrally with the dynode (8). Glass parts (22) are bonded to all the glass receiving parts (21). The glass parts (22) are bonded by applying glass to the glass receiving parts (21) and hardening the glass and each have a generally dome-like convex shape. Each dynode (8) is formed after the dome-like glass part (22) is bonded to the glass receiving part (21).

摘要翻译： 构成电子倍增器或光电倍增管的倍增电极（8）设置有由排列（8）的外框架（16）和分隔部分（17）限定的8行通道（15）。 在每个通道（15）中，布置有多个电子倍增孔（14）。 在倍增极（8）的外框架（16）和分隔部分（17）的指定位置，与外框架（16）和分隔部分（17）相比较宽的玻璃容纳部件（21）与 倍增极（8）。 玻璃部件（22）与所有玻璃接收部件（21）接合。 玻璃部分（22）通过将玻璃施加到玻璃接收部分（21）并使玻璃硬化并且各自具有大致圆顶状的凸起形状而接合。 在圆顶状玻璃部件22接合到玻璃接收部件21之后形成多个倍增极8。

公开(公告)号：US20230341676A1

公开(公告)日：2023-10-26

申请号：US18138266

申请日：2023-04-24

申请人： HAMAMATSU PHOTONICKS K.K.

发明人： Daiki SUZUKI ,  Yuki MORINAGA ,  Go TANAKA

IPC分类号： G02B26/08 ,  B81B3/00 ,  G02B26/10

CPC分类号： G02B26/085 ,  B81B3/0075 ,  G02B26/10 ,  B81B2201/042

摘要： An actuator device includes: a support portion; a movable portion; a first connection portion connecting the movable portion to the support portion on a first axis so that the movable portion is swingable around the first axis; and a first wiring provided on the first connection portion. The first wiring includes a first main body formed of a metal material having a Vickers hardness of 50 HV or more. The first main body includes a first surface facing the first connection portion and a second surface other than the first surface. The second surface has a shape in which a curvature is continuous over the entire second surface in a cross-section perpendicular to an extension direction of the first wiring.

公开(公告)号：US08735771B2

公开(公告)日：2014-05-27

申请号：US11886655

申请日：2006-03-20

申请人： Koji Kuno ,  Tatsuya Suzuki

发明人： Koji Kuno ,  Tatsuya Suzuki

IPC分类号： B23K26/42

CPC分类号： C03C23/0025 ,  B23K26/0624 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  C03B33/0222 ,  H01L21/78

摘要： A laser processing method which can reduce the chipping generated when a plate-like object to be processed formed with a modified region is turned into small pieces in steps other than its dividing step. In a part extending along a line to cut in an object to be processed, laser light is oscillated in a pulsing fashion in an intermediate portion including an effective part, and is continuously oscillated in one end portion and the other end portion on both sides of the intermediate portion. Since the laser light intensity becomes lower in continuous oscillation than in pulse oscillation, modified regions can be formed in the intermediate portion but not in one end portion and the other end portion. This keeps the modified regions from reaching the outer face of the substrate, thus making it possible to prevent particles from occurring when forming the modified regions.

摘要翻译： 当将形成有改质区域的被处理板状物体时产生的切屑产生的激光加工方法，除了分割工序以外，还可以成为小片。 在沿着一条线延伸以切割待处理物体的部分中，激光以脉冲方式在包括有效部分的中间部分中振荡，并且在一个端部中的另一端部和另一端部 中间部分。 由于连续振荡中的激光强度比在脉冲振荡中降低，所以可以在中间部分而不是在一个端部和另一个端部形成改质区域。 这使得改性区域不会到达衬底的外表面，从而可以防止在形成改质区域时发生颗粒。

公开(公告)号：US20100102328A1

公开(公告)日：2010-04-29

申请号：US12530067

申请日：2008-03-17

申请人： Harumasa Yoshida ,  Yasufumi Takagi ,  Masakazu Kuwabara

发明人： Harumasa Yoshida ,  Yasufumi Takagi ,  Masakazu Kuwabara

IPC分类号： H01L29/201

CPC分类号： C23C16/303 ,  C23C16/0272 ,  C23C16/042 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12

摘要： A nitride semiconductor substrate is featured in comprising: a GaN semiconductor layer grown on a base layer, which has a substantially triangular cross-section along the thickness direction thereof, a periodic stripe shapes, and uneven surfaces arranged on the stripes inclined surfaces; and an overgrown layer composed of AlGaN or InAlGaN on the GaN semiconductor layer.

摘要翻译： 氮化物半导体衬底的特征在于包括：在基底层上生长的GaN半导体层，其沿其厚度方向具有基本上三角形的横截面，周期性条纹形状和布置在条状倾斜表面上的不平坦表面; 以及在GaN半导体层上由AlGaN或InAlGaN构成的杂色增长层。

公开(公告)号：US20100295836A1

公开(公告)日：2010-11-25

申请号：US12746183

申请日：2008-12-04

申请人： Naoya Matsumoto ,  Norihiro Fukuchi ,  Takashi Inoue ,  Yasunori Igasaki

发明人： Naoya Matsumoto ,  Norihiro Fukuchi ,  Takashi Inoue ,  Yasunori Igasaki

IPC分类号： G09G5/00

CPC分类号： G02F1/13318 ,  G02F1/136277 ,  G02F2203/50 ,  G09G3/2092 ,  G09G3/3611 ,  G09G2300/0491 ,  G09G2320/02 ,  G09G2320/0285

摘要： The present invention relates to a phase modulating apparatus capable of highly accurately and easily correcting the phase modulation characteristic of a reflective electric address spatial light modulator even when a condition of input light is changed. In the LCOS phase modulating apparatus, an input unit inputs the condition of the input light, and a processing unit sets an input value for each pixel. A correction value deriving unit determines a correction condition according to the condition of the input light. A control input value converting unit converts the input value set for each pixel into a corrected input value based on the correction condition. An LUT processing unit converts the corrected input value into a voltage value, and drives each pixel by using a drive voltage equivalent to the converted voltage value.

摘要翻译： 本发明涉及即使当输入光的条件改变时也能高精度地且容易地校正反射式电地址空间光调制器的相位调制特性的相位调制装置。 在LCOS相位调制装置中，输入单元输入输入光的条件，并且处理单元设置每个像素的输入值。 校正值导出单元根据输入光的条件来确定校正条件。 控制输入​​值转换单元基于校正条件将针对每个像素设置的输入值转换为校正输入值。 LUT处理单元将校正的输入值转换为电压值，并且通过使用与转换的电压值相当的驱动电压驱动每个像素。

公开(公告)号：US20060267126A1

公开(公告)日：2006-11-30

申请号：US11429454

申请日：2006-05-08

申请人： Yoshimaro Fujii ,  Kouji Okamoto ,  Akira Sakamoto

发明人： Yoshimaro Fujii ,  Kouji Okamoto ,  Akira Sakamoto

IPC分类号： H01L31/0203

CPC分类号： H01L31/103 ,  H01L31/0203 ,  H01L31/0392 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2924/10155 ,  H01L2924/3025 ,  Y02E10/50 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor photodetector 10 has a first semiconductor substrate 1 that is of a first conductive type and a low resistivity and has a (111) front surface, and a second semiconductor substrate 2 that is of the first conductive type and a high resistivity, has a (100) front surface, and is adhered onto first semiconductor substrate 1. A semiconductor region 3 of a second conductive type is formed on the front surface side of second semiconductor substrate 2. A region of a periphery of semiconductor region 3 is etched until first semiconductor substrate 1 is exposed. A first electrode 1e and a second electrode 2e are electrically connected to the exposed front surface of first semiconductor substrate 1 and to semiconductor region 3, respectively.

摘要翻译： 半导体光电探测器10具有第一导电类型和低电阻率的第一半导体衬底1，并且具有（111）前表面，并且具有第一导电类型和高电阻率的第二半导体衬底2具有 （100）表面，并且粘附到第一半导体衬底1上。 第二导电类型的半导体区域3形成在第二半导体衬底2的前表面侧上。 蚀刻半导体区域3的周围的区域直到第一半导体衬底1露出。 第一电极1 e和第二电极2 e分别电连接到第一半导体衬底1的暴露的前表面和半导体区域3。