公开(公告)号：US20220034708A1

公开(公告)日：2022-02-03

申请号：US17278736

申请日：2019-09-18

Applicant: METRYX LIMITED

Inventor： Gregor ELLIOTT ,  Eric TONNIS ,  Paul HARRISON ,  Mark BERRY

IPC: G01G23/48 ,  G01J5/00 ,  G05D23/19 ,  H01L21/67

Abstract: A semiconductor wafer mass metrology method comprising: controlling the temperature of a semiconductor wafer by: detecting information relating to the temperature of the semiconductor wafer; and controlling cooling or heating of the semiconductor wafer based on the detected information relating to the temperature of the semiconductor wafer; wherein controlling the cooling or heating of the semiconductor wafer comprises controlling a duration of the cooling or heating of the semiconductor wafer; and subsequently loading the semiconductor wafer onto a measurement area of a semiconductor wafer mass metrology apparatus.

公开(公告)号：US08683880B2

公开(公告)日：2014-04-01

申请号：US12680756

申请日：2008-09-30

Applicant: Robert John Wilby

Inventor： Robert John Wilby

IPC: G01G9/00

CPC classification number: G01G23/14 ,  G01G9/00 ,  G01G21/22 ,  G01G23/00 ,  H01L21/67253

Abstract: A semiconductor wafer metrology technique which corrects for the effect of electrostatic forces on an atmospheric buoyancy compensated weight force measurement of a semiconductor wafer. In one aspect a wafer is weighed in a faraday cage whose is measured independently. A change in the measured weight of the faraday cage can be used to correct the measure weight the wafer. In another aspect a direct electrostatic measurement can be converted into a weight correction using a predetermined correlation between an electrostatic charge measured by the charge meter and a weight error force. In another aspect the electrostatic measurement may be indirect, e.g. derived from varying the distance between the wafer and a grounded plate parallel to the wafer to effect a change in an electrostatic force between the grounded plate and the wafer.

Abstract translation: 一种半导体晶片测量技术，其校正静电力对半导体晶片的大气浮力补偿重力测量的影响。 在一个方面，在独立测量的法拉第笼中称重晶片。 可以使用法拉第笼的测量重量的变化来校正晶片的测量重量。 在另一方面，直接静电测量可以使用由计费表测量的静电电荷与重量误差力之间的预定相关性转换为权重校正。 在另一方面，静电测量可以是间接的，例如， 来自改变晶片与平行于晶片的接地板之间的距离，以实现接地板和晶片之间的静电力的变化。

公开(公告)号：US09228886B2

公开(公告)日：2016-01-05

申请号：US13686265

申请日：2012-11-27

Applicant: METRYX LIMITED

Inventor： Robert John Wilby

IPC: H01L21/66 ,  G01G9/00 ,  G01G21/22 ,  G01G21/28 ,  H01L21/67 ,  G01G23/01 ,  G01G23/16

CPC classification number: G01G21/28 ,  G01G9/00 ,  G01G21/22 ,  G01G23/01 ,  G01G23/16 ,  H01L21/67253 ,  H01L22/12

Abstract: A semiconductor wafer metrology technique comprising performing atmospheric buoyancy compensated weighing of a wafer, in which the wafer is weighed in a substantially upright condition. A vertical or near vertical wafer orientation causes the surface area in the direction of a force (weight) sensor to be reduced compared with a horizontal wafer orientation. Hence, the electrostatic force components acting in the same direction as the wafer weight force component is reduced.

Abstract translation: 一种半导体晶片测量技术，包括对晶片进行大气浮力补偿称重，其中晶片在基本竖直的状态下称重。 垂直或接近垂直的晶片取向使得与水平晶片取向相比，力（重量）传感器的方向上的表面积减小。 因此，作用在与晶片重力分量相同方向的静电力分量减小。

公开(公告)号：US20130149800A1

公开(公告)日：2013-06-13

申请号：US13719887

申请日：2012-12-19

Applicant: Metryx Limited

Inventor： Adrian KIERMASZ

IPC: H01L21/66

CPC classification number: H01L22/12 ,  G05B15/02 ,  G05B23/024 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor wafer fabrication metrology method in which process steps are characterised by a change in wafer mass, whereby during fabrication mass is used as a measurable parameter to implement statistical process control on the one or more of process steps. In one aspect, the shape of a measured mass distribution is compared with the shape of a predetermined characteristic mass distribution to monitor the process. An determined empirical relationship between a control variable of the process and the characteristic mass change may enable differences between the measured mass distribution and characteristic mass distribution to provide information about the control variable. In another aspect, the relative position of an individual measured wafer mass change in a current distribution provides information about individual wafer problems independently from general process problems.

Abstract translation: 一种半导体晶片制造计量方法，其中工艺步骤的特征在于晶片质量的变化，由此在制造期间将质量用作可测量的参数以对一个或多个工艺步骤实施统计过程控制。 在一个方面，将测量的质量分布的形状与预定特征质量分布的形状进行比较以监测该过程。 过程的控制变量与特征质量变化之间确定的经验关系可以使测量的质量分布和特征质量分布之间的差异能够提供关于控制变量的信息。 另一方面，单个测量的晶片质量变化在电流分布中的相对位置提供了关于单个晶片问题的信息，而与一般工艺问题无关。

公开(公告)号：US08357548B2

公开(公告)日：2013-01-22

申请号：US12680755

申请日：2008-09-29

Applicant: Robert John Wilby

Inventor： Robert John Wilby

IPC: H01L21/66 ,  G01R31/26

CPC classification number: G01G21/28 ,  G01G9/00 ,  G01G21/22 ,  G01G23/01 ,  G01G23/16 ,  H01L21/67253 ,  H01L22/12

Abstract: A semiconductor wafer metrology technique comprising performing atmospheric buoyancy compensated weighing of a wafer, in which the wafer is weighed in a substantially upright condition. A vertical or near vertical wafer orientation causes the surface area in the direction of a force (weight) sensor to be reduced compared with a horizontal wafer orientation. Hence, the electrostatic force components acting in the same direction as the wafer weight force component is reduced.

Abstract translation: 一种半导体晶片测量技术，包括对晶片进行大气浮力补偿称重，其中晶片在基本竖直的状态下称重。 垂直或接近垂直的晶片取向使得与水平晶片取向相比，力（重量）传感器的方向上的表面积减小。 因此，作用在与晶片重力分量相同方向的静电力分量减小。

公开(公告)号：US08200447B2

公开(公告)日：2012-06-12

申请号：US13008312

申请日：2011-01-18

Applicant: Robert John Wilby ,  Adrian Kiermasz

Inventor： Robert John Wilby ,  Adrian Kiermasz

IPC: G06F19/00

CPC classification number: G01G19/00

Abstract: Measuring apparatus for monitoring the position of the center of mass of a semiconductor wafer is disclosed. The apparatus includes a wafer support (14) with a ledge for supporting an edge of a wafer (2) when it is lifted at a detection point by a probe (16). The probe (16) is connected to a force sensor (18) which senses a force due to a moment of the wafer about a fulcrum (4) on the wafer support (14). Moment measurements are taken at a plurality of detection points and a processing unit calculates the position of the center of mass from the moment measurements. Changes in wafer mass distribution (e.g. due to faulty treatment steps) which cause movement of the center of mass can be detected.

Abstract translation: 公开了一种用于监测半导体晶片的质心位置的测量装置。 该装置包括具有用于支撑晶片（2）的边缘的凸缘的晶片支撑件（14），当它在探测点处由探针（16）提升时。 探针（16）连接到力传感器（18），力传感器（18）感测由于晶片周围的晶片支撑件（14）上的支点（4）的力矩所引起的力。 在多个检测点进行力矩测量，并且处理单元从力矩测量中计算质心的位置。 可以检测造成质心移动的晶片质量分布的变化（例如由于处理不良步骤）。

公开(公告)号：US07020577B2

公开(公告)日：2006-03-28

申请号：US10312989

申请日：2001-06-29

Applicant: Robert John Wilby

Inventor： Robert John Wilby

IPC: H01L23/58 ,  H01L21/66 ,  G01G17/00 ,  G01G19/00

CPC classification number: G01G9/00 ,  G01R31/2648 ,  H01L22/12

Abstract: In order to determine the dielectric constant of a layer deposited on a semiconducotr wafer (2), the density of the layer is obtained. To obtain that density, the wafer (2) without the layer is weighed in a weighing chamber (4) in which a weighing pan (7) supports the wafer on a weighing balance. The weight of the wafer is determined taking into account the buoyancy exerted by the air on the wafer (2). Then the layer is deposited on the wafer (2) and the weighing operation repeated. Alternatively a reference wafer may be used. If the material of the layer is known, the weight of the layer can be used to derive its density using a thickness measurement. Alternatively, if the density is known, the thickness can be obtained.

Abstract translation: 为了确定沉积在半导体晶片（2）上的层的介电常数，获得了该层的密度。 为了获得该密度，在称重室（4）中称量没有层的晶片（2），其中称重盘（7）在称重平衡面上支撑晶片。 考虑到空气对晶片（2）施加的浮力来确定晶片的重量。 然后将该层沉积在晶片（2）上，重复称重操作。 或者，可以使用参考晶片。 如果层的材料是已知的，则可以使用层的重量来使用厚度测量来获得其密度。 或者，如果密度是已知的，则可以获得厚度。

公开(公告)号：US09995783B2

公开(公告)日：2018-06-12

申请号：US15195131

申请日：2016-06-28

Applicant: METRYX LIMITED

Inventor： Adrian Kiermasz

IPC: G01R31/00 ,  G01R31/26 ,  G01N5/02 ,  G01N15/08 ,  H01L21/66 ,  G01N5/00 ,  C30B7/00 ,  G01N1/00 ,  C30B1/00 ,  C30B23/00 ,  H01J49/26

CPC classification number: G01R31/2601 ,  C30B1/00 ,  C30B7/00 ,  C30B23/00 ,  G01N1/00 ,  G01N5/00 ,  G01N5/02 ,  G01N15/0893 ,  G01N2201/00 ,  G01N2203/00 ,  H01J49/26 ,  H01L22/12

Abstract: A method and apparatus for extracting the contents of voids and/or pores present in a semiconductor device to obtain information indicative of the nature of the voids and/or pores, e.g. to assist with metrology measurements. The method includes heating the semiconductor wafer to expel the contents of the voids and/or pores, collecting the expelled material in a collector, and measuring a consequential change in mass of the semiconductor wafer and/or the collector, to extract information indicative of the nature of the voids. This information may include information relating to the distribution of the voids and/or pores, and/or the sizes of the voids and/or pores, and/or the chemical contents of the voids and/or pores. The collector may include a condenser having a temperature-controlled surface (e.g. in thermal communication with a refrigeration unit) for condensing the expelled material.

公开(公告)号：US09818658B2

公开(公告)日：2017-11-14

申请号：US15039759

申请日：2014-11-03

Applicant: METRYX LIMITED

Inventor： Robert John Wilby ,  Adrian Kiermasz

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L22/26 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67706

Abstract: A semiconductor wafer processing method comprising controlling the temperature of a semiconductor wafer to be within a predetermined processing temperature range by: causing a first temperature change of the semiconductor wafer using a first temperature changing unit; and subsequently causing a second temperature change using a second temperature changing unit; wherein the first change is greater than the second change; and subsequently loading the semiconductor wafer on a processing area of a semiconductor wafer processing apparatus. Also, a semiconductor wafer processing method comprising controlling the temperature of a semiconductor wafer to be within a predetermined processing temperature range by causing a temperature change of the semiconductor wafer using a temperature changing unit; transporting the semiconductor wafer from the temperature changing unit to a processing area of a semiconductor wafer processing apparatus; and controlling the temperature of the semiconductor wafer during the transporting step.

公开(公告)号：US20170115158A1

公开(公告)日：2017-04-27

申请号：US15301661

申请日：2015-03-23

Applicant: METRYX LIMITED

Inventor： Robert John WILBY ,  Adrian KIERMASZ

IPC: G01G23/10 ,  H01L21/67 ,  H01L21/66 ,  G01G17/00

CPC classification number: G01G23/10 ,  G01G17/00 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/12

Abstract: A semiconductor wafer weighing apparatus comprises: a weight force measuring device for measuring a weight force of a semiconductor wafer; and control means configured to control an operation of the apparatus based on detection of acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus by a detector for detecting acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus; wherein: the control means is arranged to determine an error in the output of the weight force measuring device caused by an acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus, using a predetermined relationship that matches the error in the output of the weight force measuring device to acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus for different accelerations of the apparatus or of a semiconductor wafer loaded on the apparatus.