公开(公告)号：US20010042799A1

公开(公告)日：2001-11-22

申请号：US09776004

申请日：2001-02-02

申请人： APEX Co. Ltd.

发明人： Jae Ho Kim ,  In Chel Shin ,  Sang Joon Park ,  Kwan Goo Rha ,  Sang Ho Kim

IPC分类号： B05B001/14

CPC分类号： C23C16/45565 ,  C23C16/452 ,  C23C16/45574 ,  H01J37/32082 ,  H01L21/67069

摘要： There is disclosed a showerhead apparatus for radical-assisted deposition including a showerhead of a two-stair structure separated by a given distance, which has a first buffer for uniformly distributing a raw material gas and a second buffer for uniformly distributing a plasma gas, wherein a plasma is generated within the showerheads and the raw material gas sprayed into the plasma is constantly maintained, thus forming a uniform thin film on a wafer or a substrate. The showerhead apparatus for radical-assisted deposition comprises a raw material gas spray means including a first buffer which is divided into upper and lower layers for uniformly distributing a gas introduced from a raw material gas injection tube, wherein a plurality of raw material gas spray holes for spraying the raw material gas distributed within the first buffer at a given flow rate is formed at a lower plate of the spray means; a plasma generating gas spray means including a second buffer for uniformly distributing a plasma generating gas between with the raw material gas spray means, wherein a plurality of plasma generating gas spray holes and through holes for spraying the plasma generating gas distributed within the second buffer are formed at a lower plate of the spray means, respectively; a guide means for communicating the raw material gas spray holes in the raw material gas spray means and the through holes in the plasma generating gas spray means and for inducing the raw material gas and the plasma generating gas so that they are not mixed; and a RF generating means mounted at one outside side of the raw material gas spray means, wherein a RF rod for applying an outside RF power is included at a lower plate of the RF generating means.

摘要翻译： 公开了一种用于自由基辅助沉积的喷头装置，包括分隔给定距离的两层结构的喷头，其具有用于均匀分布原料气体的第一缓冲器和用于均匀分布等离子体气体的第二缓冲器，其中 在喷淋头内产生等离子体，并且恒定地保持喷射到等离子体中的原料气体，从而在晶片或基板上形成均匀的薄膜。 用于自由基辅助沉积的喷头装置包括原料气体喷射装置，其包括第一缓冲器，其分为上层和下层，用于均匀分布从原料气体注入管引入的气体，其中多个原料气体喷射孔 为了喷射在喷射装置的下板处形成以给定流量分布在第一缓冲器内的原料气体; 一种等离子体产生气体喷射装置，包括用于在原料气体喷射装置之间均匀分布等离子体产生气体的第二缓冲器，其中多个等离子体产生气体喷射孔和用于喷射分布在第二缓冲器内的等离子体产生气体的通孔 分别形成在喷雾装置的下板上; 用于将原料气体喷射装置中的原料气体喷射孔和等离子体产生气体喷射装置中的通孔连通并引导原料气体和等离子体产生气体使其不混合的引导装置; 以及安装在所述原料气体喷射装置的一个外侧的RF产生装置，其中用于施加外部RF功率的RF杆包括在所述RF产生装置的下板处。

公开(公告)号：US20020129769A1

公开(公告)日：2002-09-19

申请号：US10102108

申请日：2002-03-19

申请人： Apex Co. Ltd.

发明人： Jae-Ho Kim ,  Sang-Joon Park

IPC分类号： C23F001/00 ,  C23C016/00

CPC分类号： C23C16/45544 ,  C23C16/45514 ,  C23C16/45538 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/515

摘要： The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.

摘要翻译： 本发明涉及化学气相沉积装置。 在化学气相沉积设备中，连接到外部RF电源的RF电源连接部分安装在室的上侧; 射频电极板安装在腔室内以与腔室的内上表面隔开预定的间隙，并与设置在RF电极板下方的喷头隔开预定间隙; 通过从外部RF电源向RF电极板施加的电力，在由RF电极板和喷头的上表面之间的间隙限定的第一缓冲部分中产生等离子体; 淋浴头在垂直方向上分为两部分，第二缓冲部分由两部分之间的空间限定; 将反应气体供给到其中产生等离子体的第一缓冲部分; 并且源气体被供应到第二缓冲部分。