Ear-infrared emitter of high emissivity and corrosion resistance and
method for the preparation thereof
    2.
    发明授权
    Ear-infrared emitter of high emissivity and corrosion resistance and method for the preparation thereof 失效
    高发射率和耐腐蚀性的耳红外发射体及其制备方法

    公开(公告)号:US5213629A

    公开(公告)日:1993-05-25

    申请号:US877191

    申请日:1992-05-01

    摘要: A far-infrared emitter of high corrosion resistance is prepared by an oxidizing heat treatment of a body made from a stainless steel of 20-35% by weight of chromium, 0.5-5.0% by weight of molybdenum, up to 3.0% by weight of manganese and up to 3.0% by weight of silicon at 900.degree.-1200 .degree. C. to form an oxidized surface film having a thickness of at least 0.2 mg/cm.sup.2. Further, a far-infrared emitter of a high emissivity approximating a black body is prepared by subjecting a body made from a stainless steel of 10-35% by weight of chromium, 1.0-4.0% by weight of silicon and up to 3.0% by weight of manganese to a blasting treatment to roughen the surface followed by an oxidizing heat treatment at 900.degree.-1200 .degree. C. to form an oxide film on the surface in the form of protrusions having a length of at least 5 .mu.m.

    摘要翻译: 通过氧化热处理由20-35重量%的铬,0.5-5.0重量%的钼,至多3.0重量%的钼的不锈钢制成的远红外发射体, 锰和在900-1200℃下高达3.0重量%的硅,以形成厚度为至少0.2mg / cm 2的氧化表面膜。 此外,通过将由10-35重量%的铬,1.0-4.0重量%的硅和不超过3.0重量%的由不锈钢制成的体不锈钢制成的主体由高达3.0%的硅制成的远红外发射体 重量的锰进行喷砂处理以使表面粗糙化,然后在900-1200℃下进行氧化热处理,以在表面上形成具有至少5μm的长度的突起形式的氧化膜。

    Far-infrared emitter of high emissivity and corrosion resistance and
method for the preparation thereof
    8.
    发明授权
    Far-infrared emitter of high emissivity and corrosion resistance and method for the preparation thereof 失效
    具有高发射率和耐腐蚀性的远红外发射体及其制备方法

    公开(公告)号:US5338616A

    公开(公告)日:1994-08-16

    申请号:US47613

    申请日:1993-04-08

    摘要: A far-infrared emitter of high corrosion resistance is prepared by an oxidizing heat treatment of a body made from a stainless steel of 20-35% by weight of chromium, 0.5-5.0% by weight of molybdenum, up to 3.0% by weight of manganese and up to 3.0% by weight of silicon at 900.degree.-1200.degree. C. to form an oxidized surface film having a thickness of at least 0.2 mg/cm.sup.2. Further, a far-infrared emitter of a high emissivity approximating a black body is prepared by subjecting a body made from a stainless steel of 10-35% by weight of chromium, 1.0-4.0% by weight of silicon and up to 3.0% by weight of manganese to a blasting treatment to roughen the surface followed by an oxidizing heat treatment at 900.degree.-1200.degree. C. to form an oxide film on the surface in the form of protrusions having a length of at least 5 .mu.m.

    摘要翻译: 通过氧化热处理由20-35重量%的铬,0.5-5.0重量%的钼,至多3.0重量%的钼的不锈钢制成的远红外发射体, 锰和在900-1200℃下高达3.0重量%的硅,以形成厚度为至少0.2mg / cm 2的氧化表面膜。 此外,通过将由10-35重量%的铬,1.0-4.0重量%的硅和不超过3.0重量%的由不锈钢制成的体不锈钢制成的主体由高达3.0%的硅制成的远红外发射体 重量的锰进行喷砂处理以使表面粗糙化,然后在900-1200℃下进行氧化热处理,以在表面上形成具有至少5μm的长度的突起形式的氧化膜。