摘要:
A sense amplifier for reading a memory cell is provided. The sense amplifier includes a first input branch for applying a biasing voltage to the memory cell through regulation means and for receiving a first input current indicative of a state of the memory cell, the regulation means including a first controlled element having a voltage-controlled conductivity and a control element for applying a first control voltage corresponding to the first input current to the first controlled element, and sensing means for determining the state of the memory cell according to a comparison between the first input current and a reference value; the sensing means includes a second input branch including a second controlled element (M3m), shifting means (215m) for applying a second control voltage equal to the first control voltage shifted by a predetermined offset to the second controlled element, a second input current corresponding to the second control voltage flowing through the second input branch, and comparison means for comparing the second input current with the reference value.
摘要:
A current sense amplifier, in particular for low voltage applications, of the type incorporated in a memory electronic device and including a differential amplifier having inputs respectively associated with a matrix circuit leg, connected to a cell to be sensed, and a reference circuit leg, connected a reference cell. At least the matrix circuit leg has a first MOS transistor to which an inverter is connected in a cascode configuration and a first input of the differential amplifier corresponding to the matrix circuit leg is coupled to a conduction terminal of the first MOS transistor and to the bitline of the memory matrix by a second MOS transistor.
摘要:
A memory device, a method for sensing a current output and a sensing circuit are disclosed. In one embodiment, a first voltage is supplied at least to a drain and a source terminal of a neighboring memory cell before sensing, and the first voltage is applied to a source terminal of a selected memory cell, while sensing the current though the selected memory cell.
摘要:
An electronic device including a microprocessor, a circuit generating a clock signal, and memories of both the volatile type and the non-volatile type, incorporates a circuit for generation of a reset signal capable of detecting a stop in the oscillation of said clock signal and generating a logic signal coupled with the reset input of the microprocessor. The circuit monitors the clock signal applied to the device and, if an irregularity is detected, generate a reset signal holding the microprocessor in a safe state. The reset signal is held until the circuit generating the clock signal resumes normal operation.
摘要:
A circuit for generation of a reset signal in an electronic device, of the type comprising a microprocessor interlocked with a circuit generating a clock signal and memories of both the volatile type and the non-volatile type, is capable of detecting a stop in the oscillation of said clock signal and generating a logic signal coupled with the reset input of the microprocessor.
摘要:
A wheeled machine that rakes lawns and other surfaces to remove leaves, pine needles and other lightweight debris and conveys this material directly into a standard size plastic bag for disposal or transport to a composting location.
摘要:
A current sense amplifier, in particular for low voltage applications, of the type incorporated in a memory electronic device and including a differential amplifier having inputs respectively associated with a matrix circuit leg, connected to a cell to be sensed, and a reference circuit leg, connected a reference cell. At least the matrix circuit leg has a first MOS transistor to which an inverter is connected in a cascode configuration and a first input of the differential amplifier corresponding to the matrix circuit leg is coupled to a conduction terminal of the first MOS transistor and to the bitline of the memory matrix by a second MOS transistor.
摘要:
An electronic device including a microprocessor, a circuit generating a clock signal, and memories of both the volatile type and the non-volatile type, incorporates a circuit for generation of a reset signal capable of detecting a stop in the oscillation of said clock signal and generating a logic signal coupled with the reset input of the microprocessor. The circuit monitors the clock signal applied to the device and, if an irregularity is detected, generate a reset signal holding the microprocessor in a safe state. The reset signal is held until the circuit generating the clock signal resumes normal operation.