Ion implantation systems and methods utilizing a downstream gas source
    3.
    发明授权
    Ion implantation systems and methods utilizing a downstream gas source 有权
    离子注入系统和利用下游气源的方法

    公开(公告)号:US06891173B2

    公开(公告)日:2005-05-10

    申请号:US10005592

    申请日:2001-10-26

    CPC classification number: H01J37/08 H01J2237/31701

    Abstract: Systems and methods that neutralize ion beams in implantation processes are provided. The methods involve introducing a gas into the ion beam. The gas, for example, can be introduced into a region defined by an electrode through which the ion beam travels. The gas increases the generation of electrons in the beam which, in turn, neutralizes the beam. The neutralized beam has a reduced tendency to diverge (i.e., greater beam stability) during transport which can increase the beam current delivered to the wafer and implant uniformity, amongst other advantages. The systems and methods are particularly useful in limiting the divergence of low energy ion beams.

    Abstract translation: 提供了在植入过程中中和离子束的系统和方法。 该方法包括将气体引入离子束。 例如,气体可以被引入由离子束穿过的电极限定的区域中。 气体增加了光束中的电子的产生,这反过来中和了光束。 中和的束在传输期间具有减小的发散趋势(即,更大的光束稳定性),其可以增加传送到晶片的射束电流和植入物的均匀性以及其他优点。 这些系统和方法在限制低能量离子束的发散方面特别有用。

    Method and system for reducing semiconductor wafer breakage
    4.
    发明授权
    Method and system for reducing semiconductor wafer breakage 有权
    减少半导体晶片破损的方法和系统

    公开(公告)号:US06934595B1

    公开(公告)日:2005-08-23

    申请号:US10375318

    申请日:2003-02-26

    CPC classification number: H01L21/67259

    Abstract: In a system and method to reduce wafer breakages in a wafer handling system, the position of a wafer on a platen is monitored and closing of the platen on a vacuum chamber is prevented if a misaligned wafer is detected. In one embodiment the wafer position is monitored by monitoring the air pressure in vacuum channels of a platen faceplate.

    Abstract translation: 在减小晶片处理系统中的晶片破损的系统和方法中,如果检测到未对准的晶片,则监测晶片在压板上的位置,并且防止压板在真空室上的闭合。 在一个实施例中,通过监视压板面板的真空通道中的空气压力来监视晶片位置。

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