公开(公告)号：US20130337639A1

公开(公告)日：2013-12-19

申请号：US13533812

申请日：2012-06-26

申请人： Vladimir Ivantsov ,  Anna Volkova ,  Lisa Shapovalov ,  Alexander Syrkin ,  Philippe Spiberg ,  Hussein S. El-Ghoroury

发明人： Vladimir Ivantsov ,  Anna Volkova ,  Lisa Shapovalov ,  Alexander Syrkin ,  Philippe Spiberg ,  Hussein S. El-Ghoroury

IPC分类号： H01L21/205

CPC分类号： C30B31/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658

摘要： The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination. While this modification is a powerful tool to make high-quality group-III nitride epitaxial layers attainable even on foreign substrates having polar, semipolar and nonpolar orientation, it remains gentle enough to keep the surface of the epilayer extremely smooth. Various embodiments are disclosed.

摘要翻译： 本发明涉及一种以显着改善的结构完整性和表面平坦度来刺激III族氮化物半导体的外延层的生长的衬底的改性表面的制造方法。 通过将衬底暴露于氯化氢（HCl）和铝金属（Al）之间的反应的气体产物，在生长反应器的外部或内部进行改性。 作为多步预处理方法的一个步骤或重要部分，修饰增益将沉积在衬底和III族氮化物外延结构之间的相干协调。 与外延层一起，总外延结构可以包括缓冲层，以实现精确的基底 - 外延层协调。 虽然这种修改是使得即使在具有极性，半极性和非极性取向的异质衬底上也能获得高质量III族氮化物外延层的强大工具，但它仍然足够柔和以保持外延层的表面非常光滑。 公开了各种实施例。

公开(公告)号：US09416464B1

公开(公告)日：2016-08-16

申请号：US11871109

申请日：2007-10-11

申请人： Vladimir A. Dmitriev ,  Oleg V. Kovalenkov ,  Vladimir Ivantsov ,  Lisa Shapovalov ,  Alexander L. Syrkin ,  Anna Volkova ,  Vladimir Sizov ,  Alexander Usikov ,  Vitali A. Soukhoveev

发明人： Vladimir A. Dmitriev ,  Oleg V. Kovalenkov ,  Vladimir Ivantsov ,  Lisa Shapovalov ,  Alexander L. Syrkin ,  Anna Volkova ,  Vladimir Sizov ,  Alexander Usikov ,  Vitali A. Soukhoveev

IPC分类号： C30B25/00 ,  C30B29/40 ,  C23C16/30

CPC分类号： C30B25/00 ,  C23C16/303 ,  C30B25/14 ,  C30B25/165 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636

摘要： Apparatus and methods for controlling gas flows in a HVPE reactor. Gas flows may be controlled by a gas focusing element. Gas injection and gas collection tubes are positioned within an outer tube and are separated from each other to define a space there between. A gas, such as HCl gas, flows over the outer surfaces of the injection and collection tubes to contain gases within the space as they flow from the injection tube to the collection tube and over a seed upon which group III nitride materials are grown. Gas flows may also be controlled by a multi-tube structure that separates gases until they reach a grown zone. A multi-tube structure may include four tubes, which separate flows of a halide reactive gas, a reaction product that flows with a carrier gas, and ammonia.

摘要翻译： 用于控制HVPE反应器中的气流的装置和方法。 气体流动可以由气体聚焦元件控制。 气体注入和气体收集管定位在外管内并且彼此分离以在其间限定空间。 诸如HCl气体的气体在注入和收集管的外表面上流动，以便当它们从注射管流到收集管以及在III族氮化物材料生长的种子上时，在空间内容纳气体。 气流也可以通过分离气体直到达到生长区的多管结构来控制。 多管结构可以包括四个管，其分离卤化物反应性气体的流，与载气一起流动的反应产物和氨。

公开(公告)号：US08647435B1

公开(公告)日：2014-02-11

申请号：US11871099

申请日：2007-10-11

申请人： Vladimir A. Dmitriev ,  Oleg V. Kovalenkov ,  Vladimir Ivantsov ,  Lisa Shapovalov ,  Alexander L. Syrkin ,  Anna Volkova ,  Vladimir Sizov ,  Alexander Usikov ,  Vitali A. Soukhoveev

发明人： Vladimir A. Dmitriev ,  Oleg V. Kovalenkov ,  Vladimir Ivantsov ,  Lisa Shapovalov ,  Alexander L. Syrkin ,  Anna Volkova ,  Vladimir Sizov ,  Alexander Usikov ,  Vitali A. Soukhoveev

IPC分类号： C30B21/02

CPC分类号： C30B25/00 ,  C23C16/303 ,  C30B25/14 ,  C30B25/165 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636

摘要： HVPE reactors and methods for growth of p-type group III nitride materials including p-GaN. A reaction product such as gallium chloride is delivered to a growth zone inside of a HVPE reactor by a carrier gas such as Argon. The gallium chloride reacts with a reactive gas such as ammonia in the growth zone in the presence of a magnesium-containing gas to grow p-type group III nitride materials. The source of magnesium is an external, non-metallic compound source such as Cp2Mg.

摘要翻译： HVPE反应器和用于生长p型III族氮化物材料（包括p-GaN）的方法。 将诸如氯化镓的反应产物通过载气如氩气输送到HVPE反应器内的生长区。 在含镁气体的存在下，氯化镓与生长区中的氨等反应性气体反应生长p型III族氮化物材料。 镁源是一种外部非金属化合物，如Cp2Mg。

公开(公告)号：US08728938B2

公开(公告)日：2014-05-20

申请号：US13533812

申请日：2012-06-26

申请人： Vladimir Ivantsov ,  Anna Volkova ,  Lisa Shapovalov ,  Alexander Syrkin ,  Philippe Spiberg ,  Hussein S. El-Ghoroury

发明人： Vladimir Ivantsov ,  Anna Volkova ,  Lisa Shapovalov ,  Alexander Syrkin ,  Philippe Spiberg ,  Hussein S. El-Ghoroury

IPC分类号： H01L21/44 ,  C30B13/02 ,  C30B31/02 ,  C30B29/40

CPC分类号： C30B31/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658

摘要： The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination. While this modification is a powerful tool to make high-quality group-III nitride epitaxial layers attainable even on foreign substrates having polar, semipolar and nonpolar orientation, it remains gentle enough to keep the surface of the epilayer extremely smooth. Various embodiments are disclosed.

摘要翻译： 本发明涉及一种以显着改善的结构完整性和表面平坦度来刺激III族氮化物半导体的外延层的生长的衬底的改性表面的制造方法。 通过将衬底暴露于氯化氢（HCl）和铝金属（Al）之间的反应的气体产物，在生长反应器的外部或内部进行改性。 作为多步预处理方法的一个步骤或重要部分，修饰增益将沉积在衬底和III族氮化物外延结构之间的相干协调。 与外延层一起，总外延结构可以包括缓冲层，以实现精确的基底 - 外延层协调。 虽然这种修改是使得即使在具有极性，半极性和非极性取向的异质衬底上也能获得高质量III族氮化物外延层的强大工具，但它仍然足够柔和以保持外延层的表面非常光滑。 公开了各种实施例。