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公开(公告)号：US08372199B2
公开(公告)日：2013-02-12
申请号：US12141944
申请日：2008-06-19
IPC分类号： C30B21/02
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
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2.发明授权Method and apparatus for fabricating crack-free Group III nitride semiconductor materials 有权制造无裂纹III族氮化物半导体材料的方法和装置公开(公告)号：US08092597B2
公开(公告)日：2012-01-10
申请号：US13011879
申请日：2011-01-22
IPC分类号： C30B25/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , Y10S117/915
摘要： Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate holder located in the growth zone that supports at least one substrate on which to grow the III-N crystal; a gas supply system that delivers growth material for growing the III-N crystal to the growth zone from an outlet of the gas supply system; and a heating element that controls temperature in the reactor; determining three growth sub-zones in the growth zone for which a crystal grown in the growth sub-zones has respectively a concave, flat or convex curvature; growing the III-N crystal on a substrate in a growth region for which the crystal has a by desired curvature.
摘要翻译： 通过气相外延（VPE）制备III-N（AlN，GaN，Al x Ga（1-x）N）晶体的方法，该方法包括：提供具有：用于生长III-N晶体的生长区的反应器; 位于生长区中的衬底保持器，其支撑至少一个衬底以在其上生长III-N晶体; 气体供应系统，其从气体供应系统的出口输送用于将III-N晶体生长至生长区的生长材料; 以及控制反应器中的温度的加热元件; 确定生长区中生长的晶体中的三个生长子区，其中在生长子区中生长的晶体分别具有凹形，平坦或凸曲率; 在晶体具有期望曲率的生长区域中的衬底上生长III-N晶体。
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公开(公告)号：US08092596B2
公开(公告)日：2012-01-10
申请号：US12138487
申请日：2008-06-13
IPC分类号： C30B25/00
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
摘要翻译： 提供了优选使用改进的HVPE工艺制造的块状GaN和AlGaN单晶晶粒。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，本体材料可以在生长期间掺杂，例如以实现n，i-或p型导电性。
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4.发明授权公开(公告)号：US07727333B1
公开(公告)日：2010-06-01
申请号：US11692136
申请日：2007-03-27
申请人： Alexander L. Syrkin , Vladimir Ivantsov , Alexander Usikov , Oleg Kovalenkov , Vladimir A. Dmitriev
发明人： Alexander L. Syrkin , Vladimir Ivantsov , Alexander Usikov , Oleg Kovalenkov , Vladimir A. Dmitriev
IPC分类号： C30B25/14
CPC分类号： C30B29/403 , C30B25/02
摘要： Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. A HVPE growth apparatus includes generation, accumulation and growth zones. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is transported to the accumulation zone where it cools and condenses into a source material having an indium-containing compound. The source material is collected in the accumulation zone and evaporated. Vapor or gas resulting from evaporation of the source material forms reacts with a second reactive gas in the growth zone for growth of ternary and quaternary materials including indium gallium nitride, indium aluminum nitride, and indium gallium aluminum nitride.
摘要翻译： 氢化物相蒸汽外延（HVPE）生长装置，由此生长的方法和材料和结构。 HVPE生长装置包括产生，积累和生长区。 第一活性气体与发生区内的铟源反应，产生具有含铟化合物的第一气体产物。 将第一气体产物运送到积聚区，在其中冷却并冷凝成具有含铟化合物的源材料。 将源材料收集在积聚区中并蒸发。 由源材料蒸发产生的蒸汽或气体与生长区中的第二反应气体反应，用于三元和四元材料的生长，包括氮化铟镓，氮化铝铟和氮化铟镓。
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公开(公告)号：US07279047B2
公开(公告)日：2007-10-09
申请号：US10632736
申请日：2003-08-01
IPC分类号： C23C16/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译： 提供一种用于生长体GaN和AlGaN单晶晶粒的装置，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。
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公开(公告)号：US06936357B2
公开(公告)日：2005-08-30
申请号：US10355426
申请日：2003-01-31
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
摘要翻译： 提供了优选使用改进的HVPE工艺制造的块状GaN和AlGaN单晶晶粒。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，本体材料可以在生长期间掺杂，例如以实现n，i-或p型导电性。
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公开(公告)号：US06576054B1
公开(公告)日：2003-06-10
申请号：US09901926
申请日：2001-07-09
IPC分类号： C30B2500
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译： 提供了一种用于生长体GaN和AlGaN单晶晶粒的方法，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。
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公开(公告)号：US06555452B2
公开(公告)日：2003-04-29
申请号：US09861011
申请日：2001-05-17
IPC分类号： H01L2122
CPC分类号： C30B25/02 , B82Y10/00 , B82Y30/00 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02579 , H01L21/0259 , H01L21/0262 , H01L31/0304 , H01L31/105 , H01L33/007 , Y02E10/544 , Y02P70/521
摘要： A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.
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9.发明申请METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS 有权用于制造无裂纹III族氮化物半导体材料的方法和装置公开(公告)号：US20110114015A1
公开(公告)日：2011-05-19
申请号：US13011879
申请日：2011-01-22
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , Y10S117/915
摘要： Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate holder located in the growth zone that supports at least one substrate on which to grow the III-N crystal; a gas supply system that delivers growth material for growing the III-N crystal to the growth zone from an outlet of the gas supply system; and a heating element that controls temperature in the reactor; determining three growth sub-zones in the growth zone for which a crystal grown in the growth sub-zones has respectively a concave, flat or convex curvature; growing the III-N crystal on a substrate in a growth region for which the crystal has a by desired curvature.
摘要翻译： 通过气相外延（VPE）制备III-N（AlN，GaN，Al x Ga（1-x）N）晶体的方法，该方法包括：提供具有：用于生长III-N晶体的生长区的反应器; 位于生长区中的衬底保持器，其支撑至少一个衬底以在其上生长III-N晶体; 气体供应系统，其从气体供应系统的出口输送用于将III-N晶体生长至生长区的生长材料; 以及控制反应器中的温度的加热元件; 确定生长区中生长的晶体中的三个生长子区，其中在生长子区中生长的晶体分别具有凹形，平坦或凸曲率; 在晶体具有期望曲率的生长区域中的衬底上生长III-N晶体。
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公开(公告)号：US07611586B2
公开(公告)日：2009-11-03
申请号：US11868880
申请日：2007-10-08
IPC分类号： C23C16/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译： 提供一种用于生长体GaN和AlGaN单晶晶粒的装置，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。
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