公开(公告)号：US20050005525A1

公开(公告)日：2005-01-13

申请号：US10734232

申请日：2003-12-15

Applicant: Yuzhuo Li ,  Atanu Chowdhury ,  Kwok Tang ,  Guomin Bian ,  Krishnayya Cheemalapati

Inventor： Yuzhuo Li ,  Atanu Chowdhury ,  Kwok Tang ,  Guomin Bian ,  Krishnayya Cheemalapati

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

Abstract: An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001-20 w/w % of non-polymeric organic particles, 0.1-10 w/w % of an oxidizing agent, 0.05-10 w/w % of a chelating agent, 0.01-10 w/w % of a surfactant, and 0-10 w/w % of a passivation agent at a pH in the range of 2-12, wherein said percentages are w/w (weight/weight) percentages, based on the total weight of said compositions. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract translation: 包含可用于化学机械平面化（CMP）的非聚合有机颗粒并且可广泛用于半导体工业中的磨料组合物。 本发明的组合物优选包含与0.001-20w / w％的非聚合有机颗粒，0.1-10w / w％的氧化剂，0.05-10w / w％的螯合剂，0.01- 10w / w％的表面活性剂和0-10w / w％的钝化剂，其pH为2-12，其中所述百分比是w / w（重量/重量）百分比，基于总计 所述组合物的重量。 当用作CMP应用中的新磨料组合物时，磨料组合物提供了有效的抛光速率，优异的选择性和良好的表面质量。