公开(公告)号：US20060261306A1

公开(公告)日：2006-11-23

申请号：US11325450

申请日：2006-01-05

Applicant: Yuzhuo Li ,  Kwok Tang ,  Wu Li ,  Guomin Bian ,  Krishnayya Cheemalapati ,  Vivek Duvvuru ,  Deenesh Bundi ,  Henry Bian

Inventor： Yuzhuo Li ,  Kwok Tang ,  Wu Li ,  Guomin Bian ,  Krishnayya Cheemalapati ,  Vivek Duvvuru ,  Deenesh Bundi ,  Henry Bian

IPC: C09K13/00 ,  H01L21/461 ,  C09K13/06

CPC classification number: C09K3/1409 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: An abrasive composition comprising composite non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The composite particles individually contain at least one nonpolymeric organic component and at least one other chemical component different from the at least one nonpolymeric organic component. The slurry composition can be vastly simplified if one or more of the components are incorporated into the abrasive particles. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract translation: 包含可用于化学机械平面化（CMP）的复合非聚合有机颗粒并且可广泛用于半导体工业的研磨组合物。 复合颗粒分别含有至少一种非聚合物有机组分和至少一种不同于至少一种非聚合有机组分的其它化学组分。 如果将一种或多种组分掺入磨料颗粒中，则浆料组合物可以大大简化。 当用作CMP应用中的新磨料组合物时，磨料组合物提供了有效的抛光速率，优异的选择性和良好的表面质量。

公开(公告)号：US20050005525A1

公开(公告)日：2005-01-13

申请号：US10734232

申请日：2003-12-15

Applicant: Yuzhuo Li ,  Atanu Chowdhury ,  Kwok Tang ,  Guomin Bian ,  Krishnayya Cheemalapati

Inventor： Yuzhuo Li ,  Atanu Chowdhury ,  Kwok Tang ,  Guomin Bian ,  Krishnayya Cheemalapati

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

Abstract: An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001-20 w/w % of non-polymeric organic particles, 0.1-10 w/w % of an oxidizing agent, 0.05-10 w/w % of a chelating agent, 0.01-10 w/w % of a surfactant, and 0-10 w/w % of a passivation agent at a pH in the range of 2-12, wherein said percentages are w/w (weight/weight) percentages, based on the total weight of said compositions. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract translation: 包含可用于化学机械平面化（CMP）的非聚合有机颗粒并且可广泛用于半导体工业中的磨料组合物。 本发明的组合物优选包含与0.001-20w / w％的非聚合有机颗粒，0.1-10w / w％的氧化剂，0.05-10w / w％的螯合剂，0.01- 10w / w％的表面活性剂和0-10w / w％的钝化剂，其pH为2-12，其中所述百分比是w / w（重量/重量）百分比，基于总计 所述组合物的重量。 当用作CMP应用中的新磨料组合物时，磨料组合物提供了有效的抛光速率，优异的选择性和良好的表面质量。

公开(公告)号：US07419519B2

公开(公告)日：2008-09-02

申请号：US11325450

申请日：2006-01-05

Applicant: Yuzhuo Li ,  Kwok Tang ,  Wu Li ,  Guomin Bian ,  Krishnayya Cheemalapati ,  Vivek Duvvuru ,  Deenesh Bundi ,  Henry Bian

Inventor： Yuzhuo Li ,  Kwok Tang ,  Wu Li ,  Guomin Bian ,  Krishnayya Cheemalapati ,  Vivek Duvvuru ,  Deenesh Bundi ,  Henry Bian

IPC: B24D3/02 ,  C09C1/68 ,  C09K3/14

CPC classification number: C09K3/1409 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: An abrasive composition comprising composite non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The composite particles individually contain at least one nonpolymeric organic component and at least one other chemical component different from the at least one nonpolymeric organic component. The slurry composition can be vastly simplified if one or more of the components are incorporated into the abrasive particles. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract translation: 包含可用于化学机械平面化（CMP）的复合非聚合有机颗粒并且可广泛用于半导体工业的研磨组合物。 复合颗粒分别含有至少一种非聚合物有机组分和至少一种不同于至少一种非聚合有机组分的其它化学组分。 如果将一种或多种组分掺入磨料颗粒中，则浆料组合物可以大大简化。 当用作CMP应用中的新磨料组合物时，磨料组合物提供了有效的抛光速率，优异的选择性和良好的表面质量。

公开(公告)号：US07037351B2

公开(公告)日：2006-05-02

申请号：US10734232

申请日：2003-12-15

Applicant: Yuzhuo Li ,  Atanu Roy Chowdhury ,  Kwok Tang ,  Guomin Bian ,  Krishnayya Cheemalapati

Inventor： Yuzhuo Li ,  Atanu Roy Chowdhury ,  Kwok Tang ,  Guomin Bian ,  Krishnayya Cheemalapati

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

Abstract: An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001–20 w/w % of non-polymeric organic particles, 0.1–10 w/w % of an oxidizing agent, 0.05–10 w/w % of a chelating agent, 0.01–10 w/w % of a surfactant, and 0–10 w/w % of a passivation agent at a pH in the range of 2–12, wherein said percentages are w/w (weight/weight) percentages, based on the total weight of said compositions. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract translation: 包含可用于化学机械平面化（CMP）的非聚合有机颗粒并且可广泛用于半导体工业中的磨料组合物。 本发明的组合物优选包含与0.001-20w / w％的非聚合有机颗粒，0.1-10w / w％的氧化剂，0.05-10w / w％的螯合剂，0.01- 10w / w％的表面活性剂和0-10w / w％的钝化剂，其pH为2-12，其中所述百分比是w / w（重量/重量）百分比，基于总计 所述组合物的重量。 当用作CMP应用中的新磨料组合物时，磨料组合物提供了有效的抛光速率，优异的选择性和良好的表面质量。