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    PROCESS FOR REDUCING DISHING AND EROSION DURING CHEMICAL MECHANICAL PLANARIZATION
    1.
    发明申请
    PROCESS FOR REDUCING DISHING AND EROSION DURING CHEMICAL MECHANICAL PLANARIZATION 审中-公开
    在化学机械平面化中减少破碎和腐蚀的方法

    公开(公告)号：US20080090500A1

    公开(公告)日：2008-04-17

    申请号：US11735513

    申请日：2007-04-16

    申请人： Stuart Hellring ,  Yuzhuo Li ,  Robert Auger

    发明人： Stuart Hellring ,  Yuzhuo Li ,  Robert Auger

    IPC分类号： B24B29/02

    CPC分类号： H01L21/02074 ,  C09G1/02 ,  H01L21/3212

    摘要： This invention is directed to a slurry system and process of metal removal from a substrate. This invention is useful for polishing a microelectronic device. This invention is especially useful for chemical mechanical planarization of a semiconductor wafer for removal of an overburden thereof. The slurry system of the present invention includes a first slurry and a second slurry, wherein the first slurry has a higher abrasive concentration than the second slurry. The process of the present invention includes a first polish with the first slurry to partially remove metal from the substrate, and a second polish with the second slurry to further remove metal from the substrate.

    摘要翻译： 本发明涉及一种从衬底去除金属的浆料系统和方法。 本发明对于抛光微电子器件是有用的。 本发明对于用于去除其上覆层的半导体晶片的化学机械平面化是特别有用的。 本发明的浆液系统包括第一浆料和第二浆料，其中第一浆料具有比第二浆料更高的研磨剂浓度。 本发明的方法包括第一抛光剂，其具有第一浆料以从基底部分地去除金属，以及第二抛光剂，其具有第二浆料以从基底进一步除去金属。

    Slurry for chemical-mechanical polishing copper damascene structures
    5.
    发明授权
    Slurry for chemical-mechanical polishing copper damascene structures 失效
    用于化学机械抛光铜镶嵌结构的浆料

    公开(公告)号：US06508953B1

    公开(公告)日：2003-01-21

    申请号：US09692729

    申请日：2000-10-19

    申请人： Yuzhuo Li ,  Jason Keleher

    发明人： Yuzhuo Li ,  Jason Keleher

    IPC分类号： C09K1300

    CPC分类号： C09G1/02 ,  C23F3/00

    摘要： The present invention provides a chemical-mechanical polishing slurry for use in removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure, and a method of retarding the corrosion of copper lines during the chemical-mechanical polishing of a copper damascene structure using the slurry. The slurry according to the invention includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that is effective to retard the corrosion of the copper lines during chemical-mechanical polishing. Preferred oxidizing agents that release free radicals used in the slurry according to the invention include peroxides, peroxydiphosphates, and persulfates. Preferred non-chelating free radical quenchers used in the slurry according to the invention include ascorbic acid, thiamine, 2-propanol, and alkyl glycols, with ascorbic acid being most preferred.

    摘要翻译： 本发明提供了一种用于在铜镶嵌结构的制造期间去除覆盖钽基阻挡层的铜的化学机械抛光浆料，以及在铜化学机械抛光期间延缓铜线腐蚀的方法 大马士革结构使用浆料。 根据本发明的浆料包括释放自由基的氧化剂和非化学自由基猝灭剂，其在化学机械抛光期间有效地延缓铜线的腐蚀。 根据本发明的用于释放浆料中的自由基的优选氧化剂包括过氧化物，过氧二磷酸酯和过硫酸盐。 用于根据本发明的浆料中的优选的非螯合自由基猝灭剂包括抗坏血酸，硫胺素，2-丙醇和烷基二醇，其中抗坏血酸是最优选的。

    Method for forming through-base wafer vias
    6.
    发明授权
    Method for forming through-base wafer vias 有权
    形成通孔晶圆通孔的方法

    公开(公告)号：US09496146B2

    公开(公告)日：2016-11-15

    申请号：US14004585

    申请日：2012-02-28

    申请人： Yuzhuo Li ,  Changxue Wang ,  Daniel Kwo-Hung Shen

    发明人： Yuzhuo Li ,  Changxue Wang ,  Daniel Kwo-Hung Shen

    IPC分类号： H01L21/461 ,  H01L21/306 ,  H01L21/768 ,  C09G1/02 ,  H01L21/3105 ,  H01L21/321

    CPC分类号： H01L21/30625 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76898

    摘要： Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole.

    摘要翻译： 一种用于制造具有至少一个贯通基底晶片通孔的半导体晶片的方法，所述方法包括以下步骤：（1）提供具有至少一个导电通孔的半导体晶片，所述导电通孔包括导电金属并从半导体的前侧延伸 晶片至少部分地穿过半导体晶片; （2）将半导体晶片的前端固定在载体上; （3）使半导体晶片的背面与抛光垫和pH等于或大于9的含水化学机械抛光组合物接触，并包含（A）磨料颗粒; （B）含有至少一种过氧化物基团的氧化剂; 和（C）作为金属螯合剂和金属缓蚀剂的添加剂; （4）对半导体晶片的背面进行化学机械抛光直至至少一个导电通孔露出。 优选地，添加剂（C）是1,2,3-三唑。

    Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces
    8.
    发明授权
    Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces 有权
    含有固体聚合物颗粒和两种络合剂的水性抛光剂及其在用于抛光图案和非结构化金属表面的方法中的用途

    公开(公告)号：US08747687B2

    公开(公告)日：2014-06-10

    申请号：US13318964

    申请日：2010-04-19

    申请人： Vijay Immanuel Raman ,  Ilshat Gubaydullin ,  Yuzhuo Li ,  Mario Brands ,  Yongqing Lan

    发明人： Vijay Immanuel Raman ,  Ilshat Gubaydullin ,  Yuzhuo Li ,  Mario Brands ,  Yongqing Lan

    IPC分类号： C03C15/00

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212

    摘要： An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.

    摘要翻译： 一种水性CMP剂，其包含（A）与待抛光表面的金属相互作用并形成强复合物的固体聚合物颗粒; （B）溶解的有机非聚合化合物与金属相互作用并形成强的水溶性络合物，并随着化合物（B）的浓度增加而导致材料去除速率MRR和静态蚀刻速率SER的增加; 和（C）溶解的有机非聚合化合物与金属相互作用并形成微溶或不溶性的络合物，该配合物能够被金属表面吸附，并导致MRR比化合物（B）和 化合物（B）的SER增加较少，或化合物（C）的浓度随着浓度增加而不增加; CMP工艺包括选择组分（A）至（C）以及使用CMP剂和用IC抛光晶片的方法。

    DISPERSION COMPRISING CERIUM OXIDE AND SILICON DIOXIDE
    9.
    发明申请
    DISPERSION COMPRISING CERIUM OXIDE AND SILICON DIOXIDE 审中-公开
    包含氧化铈和二氧化硅的分散体

    公开(公告)号：US20120083188A1

    公开(公告)日：2012-04-05

    申请号：US13377005

    申请日：2010-05-18

    申请人： Michael Kroell ,  Wolfgang Lortz ,  Stefan Heberer ,  Mario Brands ,  Yuzhuo Li ,  Bettina Drescher ,  Diana Franz

    发明人： Michael Kroell ,  Wolfgang Lortz ,  Stefan Heberer ,  Mario Brands ,  Yuzhuo Li ,  Bettina Drescher ,  Diana Franz

    IPC分类号： B24B1/00 ,  C09K13/04 ,  C09K13/00 ,  C09K3/14 ,  B24D3/00

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

    摘要： Aqueous dispersion comprising cerium oxide and silicon dioxide, obtainable by first mixing a cerium oxide starting dispersion and a silicon dioxide starting dispersion while stirring, and then dispersing at a shear rate of 10000 to 30000 s−1, wherein a) the cerium oxide starting dispersion—contains 0.5 to 30% by weight of cerium oxide particles as the solid phase, —a d5o of the particle size distribution of 10 to 100 nm—and has a pH of 1 to 7, and b) the silicon dioxide starting dispersion—contains 0.1 to 30% by weight of colloidal silicon dioxide particles as the solid phase, has a d5o of the particle size distribution of 3 to 50 nm and has a pH of 6 to 11.5, d) with the proviso that the d5o of the particle size distribution of the cerium oxide particles is greater than that of the silicon dioxide particles, the cerium oxide/silicon dioxide weight ratio is >1 and the amount of cerium oxide starting dispersion is such that the zeta potential of the dispersion is negative.

    摘要翻译： 通过在搅拌下首先混合氧化铈起始分散体和二氧化硅起始分散体，然后以10000〜30000s -1的剪切速度分散得到的含有氧化铈和二氧化硅的水分散体，其中a）氧化铈起始分散体 - 含有0.5〜30重量％的作为固相的氧化铈粒子，-a d 50的粒径分布为10〜100nm，pH为1〜7，b）二氧化硅起始分散体含有 0.1〜30重量％的作为固相的胶态二氧化硅粒子，其d5o的粒度分布为3〜50nm，pH为6〜11.5，d），条件是粒径d 5o 氧化铈颗粒的分布大于二氧化硅颗粒的分布，氧化铈/二氧化硅重量比> 1，并且氧化铈起始分散体的量使得分散体的ζ电位为负。