公开(公告)号：US20180068707A1

公开(公告)日：2018-03-08

申请号：US15614714

申请日：2017-06-06

Applicant: JoongShik SHIN ,  Byoungil LEE ,  Hyunmog PARK ,  Euntaek JUNG

Inventor： JoongShik SHIN ,  Byoungil LEE ,  Hyunmog PARK ,  Euntaek JUNG

IPC: G11C11/408 ,  G11C11/06 ,  G11C8/12 ,  G11C8/08 ,  H01L21/8239 ,  H01L23/528

CPC classification number: G11C11/4085 ,  G11C8/08 ,  G11C8/12 ,  G11C8/14 ,  G11C11/06042 ,  H01L21/8239 ,  H01L23/5286 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

Abstract: A semiconductor memory device includes a substrate, a ground selection line, a word line, an insulating layer, a vertical channel portion, and a first peripheral circuit gate pattern. The substrate includes a cell array region and a peripheral circuit region. The ground selection line is on the cell array region. The word line is on the ground selection line. The insulating layer is between the ground selection line and the word line. The vertical channel portion penetrates the ground selection line, word line, and insulating layer in a direction vertical to a top surface of the substrate. The first peripheral circuit gate pattern is on the peripheral circuit region of the substrate. The insulating layer extends from the cell array region onto the peripheral circuit region to cover a top surface of the first peripheral circuit gate pattern.

公开(公告)号：US20080271762A1

公开(公告)日：2008-11-06

申请号：US12061303

申请日：2008-04-02

Applicant: Kun Joo PARK ,  Hwan Kook CHAE ,  Byoungil LEE ,  Kee Hyun KIM ,  Weon Mook LEE

Inventor： Kun Joo PARK ,  Hwan Kook CHAE ,  Byoungil LEE ,  Kee Hyun KIM ,  Weon Mook LEE

IPC: B08B5/00

CPC classification number: G05D11/132 ,  H01L21/67069 ,  H01L21/67253

Abstract: An etching gas control system is provided. The system includes a gas injector, a gas supply pipe, a Flow Ratio Controller (FRC), and a gas supply unit. The gas injector is installed in a chamber and supplies gas inside the chamber. The gas injector includes a top injector installed at a top of the chamber and a side injector installed at a side of the chamber. The gas supply pipe connects and supplies gas to the gas injector. The FRC connects to the gas supply pipe and controls supply of gas. The gas supply unit supplies gas to the FRC.

Abstract translation: 提供蚀刻气体控制系统。 该系统包括气体喷射器，气体供给管，流量比控制器（FRC）和气体供应单元。 气体注射器安装在腔室中并在腔室内提供气体。 气体喷射器包括安装在腔室顶部的顶部喷射器和安装在腔室一侧的侧面喷射器。 气体供给管连接并向气体喷射器供应气体。 FRC连接到气体供应管道并控制气体供应。 气体供应单元向FRC提供气体。

公开(公告)号：US20110056514A1

公开(公告)日：2011-03-10

申请号：US12854545

申请日：2010-08-11

Applicant: Byoungil LEE ,  Hyeokjin Jang ,  Sungyong Ko ,  Minshik Kim

Inventor： Byoungil LEE ,  Hyeokjin Jang ,  Sungyong Ko ,  Minshik Kim

IPC: B08B6/00 ,  C23F1/08

CPC classification number: H01L21/6831 ,  H01J37/321 ,  H01L21/68742

Abstract: A workpiece de-chucking device of a plasma reactor for dry-cleaning the inside of a reaction chamber and an ElectroStatic chuck (ESC) during workpiece de-chucking and a workpiece de-chucking method using the same are provided. The workpiece de-chucking device includes a lifting unit, an ICP source power unit, and a controller. The lifting unit lifts a workpiece mounted on a top surface of an ESC. The ICP source power unit forms a magnetic field in an inductive coil arranged outside a dielectric window. The controller outputs a source power control signal, a lift control signal, and a de-chucking control signal.

Abstract translation: 提供了一种用于在工件去夹紧期间干燥清洁反应室内部和静电卡盘（ESC）的等离子体反应器的工件脱扣装置和使用其的工件脱扣方法。 工件脱扣装置包括提升单元，ICP源功率单元和控制器。 提升单元提升安装在ESC顶部表面上的工件。 ICP源功率单元在布置在电介质窗外部的感应线圈中形成磁场。 控制器输出源功率控制信号，升降控制信号和去夹紧控制信号。

公开(公告)号：US20170110543A1

公开(公告)日：2017-04-20

申请号：US15260135

申请日：2016-09-08

Applicant: KYUNG-JUN SHIN ,  BYOUNGIL LEE ,  DONGSEOG EUN ,  HYUNKOOK LEE ,  SEONG SOON CHO

Inventor： KYUNG-JUN SHIN ,  BYOUNGIL LEE ,  DONGSEOG EUN ,  HYUNKOOK LEE ,  SEONG SOON CHO

IPC: H01L29/10 ,  H01L27/115

CPC classification number: H01L29/1083 ,  H01L21/764 ,  H01L27/1157 ,  H01L27/11582

Abstract: A three-dimensional (3D) semiconductor device includes a plurality of gate electrodes stacked on a substrate in a direction normal to a top surface of the substrate, a channel structure passing through the gate electrodes and connected to the substrate, and a void disposed in the substrate and positioned below the channel structure.

公开(公告)号：US08398783B2

公开(公告)日：2013-03-19

申请号：US12854545

申请日：2010-08-11

Applicant: Byoungil Lee ,  Hyeokjin Jang ,  Sungyong Ko ,  Minshik Kim

Inventor： Byoungil Lee ,  Hyeokjin Jang ,  Sungyong Ko ,  Minshik Kim

IPC: B08B3/00

CPC classification number: H01L21/6831 ,  H01J37/321 ,  H01L21/68742

Abstract: A workpiece de-chucking device of a plasma reactor for dry-cleaning the inside of a reaction chamber and an ElectroStatic chuck (ESC) during workpiece de-chucking and a workpiece de-chucking method using the same are provided. The workpiece de-chucking device includes a lifting unit, an ICP source power unit, and a controller. The lifting unit lifts a workpiece mounted on a top surface of an ESC. The ICP source power unit forms a magnetic field in an inductive coil arranged outside a dielectric window. The controller outputs a source power control signal, a lift control signal, and a de-chucking control signal.

Abstract translation: 提供了一种用于在工件去夹紧期间干燥清洁反应室内部和静电卡盘（ESC）的等离子体反应器的工件脱扣装置和使用其的工件脱扣方法。 工件脱扣装置包括提升单元，ICP源功率单元和控制器。 提升单元提升安装在ESC顶部表面上的工件。 ICP源功率单元在布置在电介质窗外部的感应线圈中形成磁场。 控制器输出源功率控制信号，升降控制信号和去夹紧控制信号。

公开(公告)号：US20110049111A1

公开(公告)日：2011-03-03

申请号：US12854409

申请日：2010-08-11

Applicant: Sungyong KO ,  Minshik KIM ,  Byoungil LEE ,  Heeseok MOON ,  Kwangmin LEE ,  Keehyun KIM ,  Weonmook LEE

Inventor： Sungyong KO ,  Minshik KIM ,  Byoungil LEE ,  Heeseok MOON ,  Kwangmin LEE ,  Keehyun KIM ,  Weonmook LEE

IPC: B23K10/00

CPC classification number: G05D7/0641 ,  H01J37/32449

Abstract: A control system for etching gas is provided. The control system includes a mass flow control unit, a flow rate control unit, and a tuning gas control unit. The mass flow control unit controls a mass flow of an etching gas input to a chamber. The flow rate control unit distributes the etching gas to an upper gas injector and a side gas injector connected with the mass flow control unit and installed in the chamber. The tuning gas control unit distributes and supplies a supplementary gas and tuning gas controlling an ion density and distribution of plasma within the chamber, to the mass flow control unit and the flow rate control unit.

Abstract translation: 提供了一种用于蚀刻气体的控制系统。 控制系统包括质量流量控制单元，流量控制单元和调谐气体控制单元。 质量流量控制单元控制输入到室的蚀刻气体的质量流量。 流量控制单元将蚀刻气体分配到与质量流量控制单元连接并安装在室中的上部气体喷射器和侧面气体喷射器。 调谐气体控制单元向质量流量控制单元和流量控制单元分配并提供辅助气体和调节气体，该气体和调节气体控制室内的离子密度和等离子体的分布。