公开(公告)号：US09840790B2

公开(公告)日：2017-12-12

申请号：US14422888

申请日：2012-08-23

申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Toru Kinoshita ,  Yuki Kubota ,  Rafael F. Dalmau ,  Jinqiao Xie ,  Baxter F. Moody ,  Raoul Schlesser ,  Zlatko Sitar

发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Toru Kinoshita ,  Yuki Kubota ,  Rafael F. Dalmau ,  Jinqiao Xie ,  Baxter F. Moody ,  Raoul Schlesser ,  Zlatko Sitar

IPC分类号： C30B25/02 ,  C30B25/20 ,  C30B25/14 ,  C30B29/40 ,  H01L33/00 ,  H01L33/32 ,  H01L33/02 ,  C30B25/16 ,  C01B21/072 ,  H01L33/18

CPC分类号： C30B25/20 ,  C01B21/072 ,  C01P2006/60 ,  C30B25/14 ,  C30B25/165 ,  C30B29/403 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/18 ,  H01L33/32 ,  Y10T428/26

摘要： The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

公开(公告)号：US20150247260A1

公开(公告)日：2015-09-03

申请号：US14422888

申请日：2012-08-23

申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Toru Kinoshita ,  Yuki Kubota ,  Rafael F. Dalmau ,  Jinqiao Xie ,  Baxter F. Moody ,  RAOUL Schlesser ,  Zlatko Sitar

发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Toru Kinoshita ,  Yuki Kubota ,  Rafael F. Dalmau ,  Jinqiao Xie ,  Baxter F. Moody ,  RAOUL Schlesser ,  Zlatko Sitar

IPC分类号： C30B25/20 ,  C30B29/40 ,  H01L33/00 ,  H01L33/32 ,  H01L33/18 ,  C30B25/14 ,  C01B21/072

CPC分类号： C30B25/20 ,  C01B21/072 ,  C01P2006/60 ,  C30B25/14 ,  C30B25/165 ,  C30B29/403 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/18 ,  H01L33/32 ,  Y10T428/26

摘要： The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline A1N layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

摘要翻译： 本发明提供了高透明度的单晶AlN层作为用于发光二极管的器件衬底，以便改善发光器件的输出和操作劣化。 高透明度的单晶AlN层在波长265nm下的a轴方向的折射率在2.250〜2.400的范围内，吸收系数小于或等于15cm -1。 本发明还提供一种生长高度透明的单晶AlN层的方法，所述方法包括以下步骤：将在反应器流道中形成的壁沉积物中所含的Al的量保持在低于或等于30％ 供给到反应器中的铝的总量，以及将流动通道中的壁温保持在小于或等于1200℃。