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    P-type group III nitride semiconductor and group III nitride semiconductor element
    3.
    发明授权
    P-type group III nitride semiconductor and group III nitride semiconductor element 有权
    P型III族氮化物半导体和III族氮化物半导体元件

    公开(公告)号：US08238391B2

    公开(公告)日：2012-08-07

    申请号：US12532564

    申请日：2008-03-21

    申请人： Toru Kinoshita ,  Hiroyuki Yanagi ,  Kazuya Takada

    发明人： Toru Kinoshita ,  Hiroyuki Yanagi ,  Kazuya Takada

    IPC分类号： H01S3/04 ,  H01S5/00

    CPC分类号： H01L33/025 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

    摘要： This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlXGaYInZN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X≧0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm−3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.

    摘要翻译： 本发明提供一种p型III族氮化物半导体，具有良好的p型性质，具有由Al x Ga Y InZ N表示的组成，其中X，Y和Z各自表示满足X + Y + Z = 1.0的关系的有理数， 即使Al含量高达1.0>X≥0.5。 实现在本发明的p型III族氮化物半导体中，在30℃至受主杂质原子浓度的空穴浓度的比例为0.001以上，通过掺杂受体杂质原子如Mg的浓度为5 ×1018〜1×1020cm-3的方法，例如MOCVD，注意不要掺杂除受体杂质原子以外的杂质原子，或者在制造由上述表示的III族氮化物半导体时，在晶体中形成位错 组成。

    Production Method of a Layered Body
    4.
    发明申请
    Production Method of a Layered Body 有权
    分层体的生产方法

    公开(公告)号：US20120183809A1

    公开(公告)日：2012-07-19

    申请号：US13498344

    申请日：2010-09-28

    申请人： Toru Kinoshita ,  Kazuya Takada

    发明人： Toru Kinoshita ,  Kazuya Takada

    IPC分类号： C30B25/02 ,  B32B9/04

    CPC分类号： C30B29/403 ,  C30B25/183 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： A production method of a layered body having a single crystal layer including a group III nitride having a composition AlXGaYInZN (wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0) includes a first growing step supplying an oxygen source gas to a sapphire substrate with a nitrogen source gas and a group III raw material gas which is a raw material gas for growing the group III nitride single crystal, thereby growing an initial single crystal layer comprising the group III nitride satisfying the composition and comprising oxygen in a concentration of 1×1020 cm−3 or more and 5×1021 cm−3 or less in a thickness of 15 nm or more and 40 nm or less on the sapphire substrate; and a second growing step of supplying the raw material gas without the oxygen source gas, or supplying the oxygen source gas in a less amount than the first growing step together with the raw material gas onto the initial single crystal layer, thereby growing the second group III nitride single crystal layer comprising the group III nitride satisfying the composition having reduced oxygen concentration than the initial single crystal layer.

    摘要翻译： 具有单晶层的制造方法，具有包含具有Al x Ga Y In Z N组成的III族氮化物的单晶层（其中，X，Y和Z分别为有效数分别满足0.9＆nlE; X＆lt; l1; 1.0,0.0＆nlE; Y＆nlE; 0.1,0.0＆ ; Z＆nlE; 0.1和X + Y + Z = 1.0）包括用氮源气体向蓝宝石衬底供应氧源气体的第一生长步骤和用于生长该组的原料气体的第III族原料气体 III族氮化物单晶，从而生长出包含满足组成的III族氮化物的初始单晶层，并且包含浓度为1×1020cm -3以上且5×1021cm-3以下的氧，厚度为15nm 或更多且在40nm或更小的蓝宝石衬底上; 以及第二生长步骤，在没有氧源气体的情况下供给原料气体，或者将比原料气体少的第一生长步骤的氧源气体与初始单晶层一起供给，从而使第二组 III族氮化物单晶层，其包含满足具有比初始单晶层低的氧浓度的组成的III族氮化物。

    Adhesive copolymer microspheres-containing aqueous suspension and method for producing the same
    5.
    发明授权
    Adhesive copolymer microspheres-containing aqueous suspension and method for producing the same 失效
    含有粘合剂共聚物微球的含水悬浮液及其制备方法

    公开(公告)号：US4656218A

    公开(公告)日：1987-04-07

    申请号：US873433

    申请日：1986-06-04

    申请人： Toru Kinoshita

    发明人： Toru Kinoshita

    IPC分类号： C08F2/16 ,  C08F220/18 ,  C08L33/06 ,  C09J7/02 ,  C09J133/06

    CPC分类号： C09J7/0217 ,  C08F220/18 ,  C09J133/064 ,  C08L2205/18 ,  C08L33/06 ,  C09J2201/606

    摘要： A repeatedly usable and releasable sheet is coated thereon with an adhesive copolymer microspheres-containing aqueous suspension and polymer microparticles prepared by polymerization of one or more vinyl monomers. In the presence of a protective colloid comprising casein, the microspheres is prepared by aqueous suspension polymerization of (a) from 70 to 99.9 percent by weight of one or more monomers selected from the group consisting of alkyl acrylate esters and alkyl methacrylate esters, (b) from 0.1 to 10 percent by weight of one or more .alpha.-monoolefin carboxylic acids and (c) from 0 to 29.9 percent by weight of one or more vinyl monomers other than the foregoing (a) and (b).

    摘要翻译： 在其上涂覆一种可反复使用的可释放的片材，其中含有通过聚合一种或多种乙烯基单体制备的含粘合共聚物微球的水性悬浮液和聚合物微粒。 在含有酪蛋白的保护胶体的存在下，通过（a）70-99.9重量％的一种或多种选自丙烯酸烷基酯和甲基丙烯酸烷基酯的单体的水悬浮聚合制备微球体（b ）为0.1〜10重量％的一种或多种α-单烯烃羧酸，和（c）0-29.9重量％的除上述（a）和（b）以外的一种或多种乙烯基单体。

    Production Method of a Layered Body
    7.
    发明申请
    Production Method of a Layered Body 有权
    分层体的生产方法

    公开(公告)号：US20120223329A1

    公开(公告)日：2012-09-06

    申请号：US13508747

    申请日：2010-11-09

    申请人： Toru Kinoshita ,  Kazuya Takada

    发明人： Toru Kinoshita ,  Kazuya Takada

    IPC分类号： H01L29/20 ,  H01L21/205

    CPC分类号： H01L21/0262 ,  C30B25/16 ,  C30B25/186 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02658

    摘要： Disclosed is a novel method for group III polarity growth on a sapphire substrate. Specifically disclosed is a method for producing a laminate wherein a group III nitride single crystal layer is laminated on a sapphire substrate by an MOCVD method. The method for producing a laminate comprises: a pretreatment step in which an oxygen source gas is supplied onto the sapphire substrate; a first growth step in which an initial single crystal layer that contains oxygen at a concentration of 5×1020 cm−3 or more but 5×1021 cm−3 or less is grown with a thickness of 3 nm or more but less than 15 nm by supplying the oxygen source gas onto the sapphire substrate together with a starting material gas for the growth of the group III nitride; and a second growth step in which a group III nitride single crystal layer that is reduced in the oxygen concentration in comparison to the initial single crystal layer is grown by supplying the starting material gas onto the initial single crystal layer without supplying the oxygen source thereto, or alternatively by supplying the oxygen source, together with the starting material gas, at a lower supply rate than that in the first growth step.

    摘要翻译： 公开了蓝宝石衬底上III族极性生长的新方法。 具体公开了通过MOCVD法在蓝宝石基板上层叠III族氮化物单晶层的层叠体的制造方法。 层叠体的制造方法包括：将氧源气体供给到蓝宝石基板上的预处理工序; 第一生长步骤，其中生长浓度为5×1020cm-3或5×1021cm-3以下的氧的初始单晶层，其厚度为3nm以上且小于15nm 通过将氧源气体与用于生长III族氮化物的原料气体一起供应到蓝宝石衬底上; 以及第二生长步骤，其中与初始单晶层相比，氧浓度降低的III族氮化物单晶层通过将原料气体供应到初始单晶层而不向其供应氧而生长， 或者以比起第一生长步骤更低的供给速率与原料气体一起供给氧源。

    Sealing device for elevator
    8.
    发明申请
    Sealing device for elevator 失效
    电梯密封装置

    公开(公告)号：US20050269038A1

    公开(公告)日：2005-12-08

    申请号：US11203090

    申请日：2005-08-15

    申请人： Shin Murakami ,  Toru Kinoshita

    发明人： Shin Murakami ,  Toru Kinoshita

    IPC分类号： B66B13/30 ,  E05F15/20

    CPC分类号： B66B13/308 ,  B66B13/30

    摘要： A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

    摘要翻译： 一种用于电梯门的密封装置，包括门口构件，门，可移动构件，下推装置和密封机构。 门口构件设置用于门。 门沿门口部件打开或关闭。 可动构件水平地设置成能够在门口构件中沿垂直方向移动，并且由推动单元向上推动。 在门关闭之前，下推机构抵抗推动单元的力推动可动构件。 密封机构在移动时与门保持不接触，并且当可移动构件被推压件按下时，密封机构与门的上部部分接触的门和门口构件之间的间隙， 下降机制。

    Acrylic copolymer
    9.
    发明授权
    Acrylic copolymer 失效
    丙烯酸共聚物

    公开(公告)号：US5243006A

    公开(公告)日：1993-09-07

    申请号：US689940

    申请日：1991-05-31

    申请人： Nobuo Nakabayashi ,  Kazuhiko Ishihara ,  Takashi Yamamoto ,  Toru Kinoshita

    发明人： Nobuo Nakabayashi ,  Kazuhiko Ishihara ,  Takashi Yamamoto ,  Toru Kinoshita

    IPC分类号： A61K6/00 ,  A61K6/083 ,  C08F20/38 ,  C08F212/00 ,  C08F212/14 ,  C08F220/06 ,  C08F220/10 ,  C08F220/12 ,  C08F220/38 ,  C08F290/04 ,  C09D4/06 ,  C09D155/00 ,  C09J133/04 ,  C09J155/00

    CPC分类号： C08F220/38 ,  A61K6/0029 ,  C08F212/14 ,  C08F220/12

    摘要： The acrylic copolymer of the present invention is an acrylic copolymer comprising recurring units derived from a (meth)acrylic ester compound and recurring units derived from a vinyl compound having --SO.sub.3 R (wherein R represents a hydrogen atom or a lower alkyl group) or having an acceptable salt thereof, wherein at least a part of ester groups of the (meth)acrylic ester compound is substituted by a group having recurring units derived from a (meth)acrylic ester. The present invention further provides a process for the preparation of the acrylic copolymer and use application of the acrylic copolymer utilizing its adhesion properties.

    摘要翻译： PCT No.PCT / JP90 / 01266 Sec。 371日期1991年5月31日 102（e）日期1991年5月31日PCT提交1990年10月2日PCT公布。 出版物WO91 / 04994 日本1991年4月18日。本发明的丙烯酸共聚物是包含衍生自（甲基）丙烯酸酯化合物的重复单元和衍生自具有-SO 3 R的乙烯基化合物的重复单元的丙烯酸共聚物（其中R表示氢原子或 低级烷基）或其可接受的盐，其中（甲基）丙烯酸酯化合物的酯基的至少一部分被来自（甲基）丙烯酸酯的重复单元的基团取代。 本发明还提供了制备丙烯酸共聚物的方法，并利用其粘合性能来应用丙烯酸共聚物。