公开(公告)号：US20110140124A1

公开(公告)日：2011-06-16

申请号：US13028505

申请日：2011-02-16

申请人： Ramon R. Collazo ,  Zlatko Sitar ,  Rafael Dalmau

发明人： Ramon R. Collazo ,  Zlatko Sitar ,  Rafael Dalmau

IPC分类号： H01L29/20

CPC分类号： H01L21/306 ,  C30B29/403 ,  C30B33/10 ,  H01L21/314 ,  H01L33/0095 ,  Y10T428/12528

摘要： The present invention provides methods of protecting a surface of an aluminum nitride substrate. The substrate with the protected surface can be stored for a period of time and easily activated to be in a condition ready for thin film growth or other processing. In certain embodiments, the method of protecting the substrate surface comprises forming a passivating layer on at least a portion of the substrate surface by performing a wet etch, which can comprise the use of one or more organic compounds and one or more acids. The invention also provides aluminum nitride substrates having passivated surfaces.

摘要翻译： 本发明提供了保护氮化铝衬底表面的方法。 具有受保护表面的基底可以储存一段时间并且易于活化以处于准备进行薄膜生长或其它处理的状态。 在某些实施方案中，保护底物表面的方法包括通过执行湿法蚀刻在基材表面的至少一部分上形成钝化层，该湿蚀刻可以包括使用一种或多种有机化合物和一种或多种酸。 本发明还提供具有钝化表面的氮化铝衬底。

公开(公告)号：US07915178B2

公开(公告)日：2011-03-29

申请号：US12182475

申请日：2008-07-30

申请人： Ramon R. Collazo ,  Zlatko Sitar ,  Rafael Dalmau

发明人： Ramon R. Collazo ,  Zlatko Sitar ,  Rafael Dalmau

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/306 ,  C30B29/403 ,  C30B33/10 ,  H01L21/314 ,  H01L33/0095 ,  Y10T428/12528

摘要： The present invention provides methods of protecting a surface of an aluminum nitride substrate. The substrate with the protected surface can be stored for a period of time and easily activated to be in a condition ready for thin film growth or other processing. In certain embodiments, the method of protecting the substrate surface comprises forming a passivating layer on at least a portion of the substrate surface by performing a wet etch, which can comprise the use of one or more organic compounds and one or more acids. The invention also provides aluminum nitride substrates having passivated surfaces.

摘要翻译： 本发明提供了保护氮化铝衬底表面的方法。 具有受保护表面的基底可以储存一段时间并且易于活化以处于准备进行薄膜生长或其它处理的状态。 在某些实施方案中，保护底物表面的方法包括通过执行湿法蚀刻在基材表面的至少一部分上形成钝化层，该湿蚀刻可以包括使用一种或多种有机化合物和一种或多种酸。 本发明还提供具有钝化表面的氮化铝衬底。

公开(公告)号：US20110020602A1

公开(公告)日：2011-01-27

申请号：US12895018

申请日：2010-09-30

申请人： Raoul Schlesser ,  Ramón R. Collazo ,  Zlatko Sitar

发明人： Raoul Schlesser ,  Ramón R. Collazo ,  Zlatko Sitar

IPC分类号： B32B33/00 ,  B32B9/00 ,  B05D3/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  Y10T428/24355 ,  Y10T428/24752

摘要： The present invention provides methods of preparing Group III-nitride films of controlled polarity and substrates coated with such controlled polarity films. In particular, the invention provides substrate preparation steps that optimize the substrate surface for facilitating growth of a Group III-polar film, an N-polar film, or a selectively patterned film with both a Group III-polar portion and an N-polar portion in precise positioning. The methods of the invention are particularly suited for use in CVD methods.

摘要翻译： 本发明提供了制备具有受控极性的III族氮化物膜的方法和用这种受控极性膜涂覆的基材。 特别地，本发明提供了底物制备步骤，其优化了基质表面以促进III族极性薄膜，N-极性薄膜或具有III族极性部分和N-极性部分的选择性图案化薄膜的生长 精确定位。 本发明的方法特别适用于CVD方法。

公开(公告)号：US20090324859A1

公开(公告)日：2009-12-31

申请号：US12556851

申请日：2009-09-10

申请人： Raoul Schlesser ,  Rafael F. Dalmau ,  Vladimir Noveski ,  Zlatko Sitar

发明人： Raoul Schlesser ,  Rafael F. Dalmau ,  Vladimir Noveski ,  Zlatko Sitar

IPC分类号： B32B1/08 ,  C04B35/56 ,  C04B35/58

CPC分类号： C04B35/56 ,  B22F5/007 ,  B22F2998/10 ,  B22F2999/00 ,  C04B35/5607 ,  C04B35/64 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/608 ,  C04B2235/612 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/94 ,  C22C1/045 ,  C30B23/00 ,  C30B23/066 ,  C30B29/36 ,  Y10T428/13 ,  B22F3/02 ,  B22F3/04 ,  B22F3/1007 ,  B22F3/14 ,  B22F2201/20

摘要： The invention provides a method of forming a dense, shaped article, such as a crucible, formed of a refractory material, the method comprising the steps of placing a refractory material having a melting point of at least about 2900° C. in a mold configured to form the powder into an approximation of the desired shape. The mold containing the powder is treated at a temperature and pressure sufficient to form a shape-sustaining molded powder that conforms to the shape of the mold, wherein the treating step involves sintering or isostatic pressing. The shape-sustaining molded powder can be machined into the final desired shape and then sintered at a temperature and for a time sufficient to produce a dense, shaped article having a density of greater than about 90% and very low open porosity. Preferred refractory materials include tantalum carbide and niobium carbide.

摘要翻译： 本发明提供一种形成由耐火材料形成的致密成型制品例如坩埚的方法，该方法包括以下步骤：将具有至少约2900℃的熔点的耐火材料放置在模具中 以将粉末形成为所需形状的近似值。 含有粉末的模具在足以形成符合模具形状的形状保持性成型粉末的温度和压力下进行处理，其中处理步骤包括烧结或等静压。 形状维持的成型粉末可以加工成最终所需的形状，然后在足以产生密度大于约90％和非常低的开孔率的致密成型制品的温度和时间下烧结。 优选的耐火材料包括碳化钽和碳化铌。

公开(公告)号：US07678195B2

公开(公告)日：2010-03-16

申请号：US11399713

申请日：2006-04-06

申请人： Raoul Schlesser ,  Vladimir Noveski ,  Zlatko Sitar

发明人： Raoul Schlesser ,  Vladimir Noveski ,  Zlatko Sitar

IPC分类号： C30B23/00

CPC分类号： C30B29/403 ,  C30B23/00

摘要： A method of growing bulk single crystals of an AlN on a single crystal seed is provided, wherein an AlN source material is placed within a crucible chamber in spacial relationship to a seed fused to the cap of the crucible. The crucible is heated in a manner sufficient to establish a temperature gradient between the source material and the seed with the seed at a higher temperature than the source material such that the outer layer of the seed is evaporated, thereby cleaning the seed of contaminants and removing any damage to the seed incurred during seed preparation. Thereafter, the temperature gradient between the source material and the seed is inverted so that the source material is sublimed and deposited on the seed, thereby growing a bulk single crystal of AlN.

摘要翻译： 提供了在单晶种子上生长AlN的单体单晶的方法，其中将AlN源材料置于坩埚室内，与熔融到坩埚盖上的种子呈空间关系。 将坩埚加热至足以在源材料和种子之间的温度梯度比源材料更高的温度建立温度梯度，使得种子的外层蒸发，从而清洁污染物种子并除去 在种子准备期间对种子的任何损害。 此后，源材料和种子之间的温度梯度被反转，使得源材料升华并沉积在种子上，从而生长AlN的大块单晶。

公开(公告)号：US20060280640A1

公开(公告)日：2006-12-14

申请号：US11398270

申请日：2006-04-05

申请人： Raoul Schlesser ,  Rafael Dalmau ,  Vladimir Noveski ,  Zlatko Sitar

发明人： Raoul Schlesser ,  Rafael Dalmau ,  Vladimir Noveski ,  Zlatko Sitar

IPC分类号： C22C1/05 ,  B22F1/02 ,  B29C67/00 ,  C04B35/653 ,  C04B35/64

CPC分类号： C04B35/56 ,  B22F5/007 ,  B22F2998/10 ,  B22F2999/00 ,  C04B35/5607 ,  C04B35/64 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/608 ,  C04B2235/612 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/94 ,  C22C1/045 ,  C30B23/00 ,  C30B23/066 ,  C30B29/36 ,  Y10T428/13 ,  B22F3/02 ,  B22F3/04 ,  B22F3/1007 ,  B22F3/14 ,  B22F2201/20

摘要： The invention provides a method of forming a dense, shaped article, such as a crucible, formed of a refractory material, the method comprising the steps of placing a refractory material having a melting point of at least about 2900° C. in a mold configured to form the powder into an approximation of the desired shape. The mold containing the powder is treated at a temperature and pressure sufficient to form a shape-sustaining molded powder that conforms to the shape of the mold, wherein the treating step involves sintering or isostatic pressing. The shape-sustaining molded powder can be machined into the final desired shap and then sintered at a temperature and for a time sufficient to produce a dense, shaped article having a density of greater than about 90% and very low open porosity. Preferred refractory materials include tantalum carbide and niobium carbide.

公开(公告)号：US20060257626A1

公开(公告)日：2006-11-16

申请号：US11382806

申请日：2006-05-11

申请人： Raoul Schlesser ,  Ramon Collazo ,  Zlatko Sitar

发明人： Raoul Schlesser ,  Ramon Collazo ,  Zlatko Sitar

IPC分类号： B32B18/00 ,  B32B9/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  Y10T428/24355 ,  Y10T428/24752

摘要： The present invention provides methods of preparing Group III-nitride films of controlled polarity and substrates coated with such controlled polarity films. In particular, the invention provides substrate preparation steps that optimize the substrate surface for facilitating growth of a Group III-polar film, an N-polar film, or a selectively patterned film with both a Group III-polar portion and an N-polar portion in precise positioning. The methods of the invention are particularly suited for use in CVD methods.

摘要翻译： 本发明提供了制备具有受控极性的III族氮化物膜的方法和用这种受控极性膜涂覆的基材。 特别地，本发明提供了底物制备步骤，其优化了基质表面以促进III族极性薄膜，N-极性薄膜或具有III族极性部分和N-极性部分的选择性图案化薄膜的生长 精确定位。 本发明的方法特别适用于CVD方法。

公开(公告)号：US09840790B2

公开(公告)日：2017-12-12

申请号：US14422888

申请日：2012-08-23

申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Toru Kinoshita ,  Yuki Kubota ,  Rafael F. Dalmau ,  Jinqiao Xie ,  Baxter F. Moody ,  Raoul Schlesser ,  Zlatko Sitar

发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Toru Kinoshita ,  Yuki Kubota ,  Rafael F. Dalmau ,  Jinqiao Xie ,  Baxter F. Moody ,  Raoul Schlesser ,  Zlatko Sitar

IPC分类号： C30B25/02 ,  C30B25/20 ,  C30B25/14 ,  C30B29/40 ,  H01L33/00 ,  H01L33/32 ,  H01L33/02 ,  C30B25/16 ,  C01B21/072 ,  H01L33/18

CPC分类号： C30B25/20 ,  C01B21/072 ,  C01P2006/60 ,  C30B25/14 ,  C30B25/165 ,  C30B29/403 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/18 ,  H01L33/32 ,  Y10T428/26

摘要： The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

公开(公告)号：US08414677B2

公开(公告)日：2013-04-09

申请号：US12556851

申请日：2009-09-10

申请人： Raoul Schlesser ,  Rafael F. Dalmau ,  Vladimir Noveski ,  Zlatko Sitar

发明人： Raoul Schlesser ,  Rafael F. Dalmau ,  Vladimir Noveski ,  Zlatko Sitar

IPC分类号： C22C29/02

CPC分类号： C04B35/56 ,  B22F5/007 ,  B22F2998/10 ,  B22F2999/00 ,  C04B35/5607 ,  C04B35/64 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/608 ,  C04B2235/612 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/94 ,  C22C1/045 ,  C30B23/00 ,  C30B23/066 ,  C30B29/36 ,  Y10T428/13 ,  B22F3/02 ,  B22F3/04 ,  B22F3/1007 ,  B22F3/14 ,  B22F2201/20

摘要： The invention provides a method of forming a dense, shaped article, such as a crucible, formed of a refractory material, the method comprising the steps of placing a refractory material having a melting point of at least about 2900° C. in a mold configured to form the powder into an approximation of the desired shape. The mold containing the powder is treated at a temperature and pressure sufficient to form a shape-sustaining molded powder that conforms to the shape of the mold, wherein the treating step involves sintering or isostatic pressing. The shape-sustaining molded powder can be machined into the final desired shape and then sintered at a temperature and for a time sufficient to produce a dense, shaped article having a density of greater than about 90% and very low open porosity. Preferred refractory materials include tantalum carbide and niobium carbide.

摘要翻译： 本发明提供一种形成由耐火材料形成的致密成型制品例如坩埚的方法，该方法包括以下步骤：将具有至少约2900℃的熔点的耐火材料放置在模具中 以将粉末形成为所需形状的近似值。 含有粉末的模具在足以形成符合模具形状的形状保持性成型粉末的温度和压力下进行处理，其中处理步骤包括烧结或等静压。 形状维持的成型粉末可以加工成最终所需的形状，然后在足以产生密度大于约90％和非常低的开孔率的致密成型制品的温度和时间下烧结。 优选的耐火材料包括碳化钽和碳化铌。

公开(公告)号：US08822045B2

公开(公告)日：2014-09-02

申请号：US13416182

申请日：2012-03-09

申请人： Ramon R. Collazo ,  Zlatko Sitar ,  Rafael Dalmau

发明人： Ramon R. Collazo ,  Zlatko Sitar ,  Rafael Dalmau

IPC分类号： B32B9/00 ,  H01L29/12 ,  C01B21/072 ,  C01F7/02

CPC分类号： H01L21/306 ,  C30B29/403 ,  C30B33/10 ,  H01L21/314 ,  H01L33/0095 ,  Y10T428/12528

摘要： The present invention provides methods of protecting a surface of an aluminum nitride substrate. The substrate with the protected surface can be stored for a period of time and easily activated to be in a condition ready for thin film growth or other processing. In certain embodiments, the method of protecting the substrate surface comprises forming a passivating layer on at least a portion of the substrate surface by performing a wet etch, which can comprise the use of one or more organic compounds and one or more acids. The invention also provides aluminum nitride substrates having passivated surfaces.

摘要翻译： 本发明提供了保护氮化铝衬底表面的方法。 具有受保护表面的基底可以储存一段时间并且易于活化以处于准备进行薄膜生长或其它处理的状态。 在某些实施方案中，保护底物表面的方法包括通过执行湿法蚀刻在基材表面的至少一部分上形成钝化层，该湿蚀刻可以包括使用一种或多种有机化合物和一种或多种酸。 本发明还提供具有钝化表面的氮化铝衬底。