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    Method and apparatus for controlling the growth process of a monocrystalline silicon ingot
    1.
    发明申请
    Method and apparatus for controlling the growth process of a monocrystalline silicon ingot 有权
    用于控制单晶硅锭生长过程的方法和装置

    公开(公告)号：US20100319611A1

    公开(公告)日：2010-12-23

    申请号：US12456552

    申请日：2009-06-18

    申请人： Benno Orschel ,  Keiichi Takanashi

    发明人： Benno Orschel ,  Keiichi Takanashi

    IPC分类号： C30B15/20

    CPC分类号： C30B29/06 ,  C30B15/26 ,  G01B11/08 ,  G06T7/12 ,  G06T2207/30148 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： The present invention provides a method and apparatus for controlling the growth of a silicon ingot in which the diameter of the growing silicon ingot can be accurately measured. A camera captures an image of the interface ring between the growing silicon ingot and the silicon melt. An image processor extracts local intensity maxima from the captured image, which are then digitized into an image data which comprises attributes of the pixels forming the local intensity maxima. An analyzer statistically analyzes the image data to derive parameters of an equation statistically simulating the interface ring. A probabilistic filter conducts the statistical analysis on the equation in which the respective pixels are weighted by their weight factors. The weight factor functions to attenuate the effect of noises caused by pixels which do not represent the interface ring. The statistical analysis may be repeated, using the renewed parameters, to progressively attenuate the effect of the noises to thereby obtain a satisfactorily accurate diameter of the silicon ingot.

    摘要翻译： 本发明提供了一种用于控制硅锭生长的方法和装置，其中可以精确地测量生长的硅锭的直径。 相机捕获生长的硅锭和硅熔体之间的界面环的图像。 图像处理器从捕获的图像中提取局部强度最大值，然后数字化为包括形成局部强度最大值的像素的属性的图像数据。 分析仪统计分析图像数据，得出统计模拟界面环的方程式的参数。 概率滤波器对各个像素的权重因子加权的方程进行统计分析。 权重因子用于衰减由不表示接口环的像素引起的噪声的影响。 可以使用更新的参数重复统计分析来逐渐衰减噪声的影响，从而获得令人满意的硅锭的精确直径。

    Reversed action diameter control in a semiconductor crystal growth system
    4.
    发明申请
    Reversed action diameter control in a semiconductor crystal growth system 审中-公开
    半导体晶体生长系统中的反向动作直径控制

    公开(公告)号：US20100024717A1

    公开(公告)日：2010-02-04

    申请号：US12221224

    申请日：2008-07-31

    申请人： Benno Orschel ,  Manabu Nishimoto

    发明人： Benno Orschel ,  Manabu Nishimoto

    IPC分类号： C30B15/22 ,  C30B35/00

    CPC分类号： C30B15/22 ,  C30B15/203 ,  C30B29/06 ,  Y10T117/1008

    摘要： A semiconductor crystal growth method includes pulling a crystal from melt in a crucible at a nominal pull speed and generating a crucible lift signal to compensate reduction in melt level in the crucible. Based on diameter of the crystal, the method includes generating a correction signal and combining the crucible lift signal and the correction signal to keep the crystal diameter substantially constant.

    摘要翻译： 半导体晶体生长方法包括以标称拉伸速度从坩埚中的熔体中拉出晶体并产生坩埚提升信号以补偿坩埚中的熔融水平的降低。 基于晶体的直径，该方法包括产生校正信号并组合坩埚提升信号和校正信号以保持晶体直径基本恒定。

    Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
    6.
    发明授权
    Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process 有权
    在生长过程中控制硅晶锭的直径的方法和装置

    公开(公告)号：US08641822B2

    公开(公告)日：2014-02-04

    申请号：US12719405

    申请日：2010-03-08

    申请人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    发明人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    IPC分类号： C30B35/00 ,  C30B15/20

    CPC分类号： C30B15/22 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032

    摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.

    摘要翻译： 根据CZ工艺从硅熔体生长单晶硅锭的方法和设备的改进。 该改进执行定义弯液面的目标锥度和测量的锥度之间的误差，并将锥度误差转换为硅锭的拉速的反馈调节。 用于控制CZ过程的常规控制模型依赖于线性控制（PID）来控制在直径和拉速之间的时域中定义的二次关系的非线性系统。 本发明将直径和拉速之间的时域中的二次关系变换成在晶锭的弯月面锥度与拉速之间的长度域中的简单的线性关系。 本发明应用在长度域内工作的线性控制（改进的PID），并且控制在长度域中具有晶锭锥度和拉速之间的线性关系的系统，以控制生长中的硅锭的直径。

    Method and apparatus for controlling the growth process of a monocrystalline silicon ingot
    7.
    发明授权
    Method and apparatus for controlling the growth process of a monocrystalline silicon ingot 有权
    用于控制单晶硅锭生长过程的方法和装置

    公开(公告)号：US08545623B2

    公开(公告)日：2013-10-01

    申请号：US12456552

    申请日：2009-06-18

    申请人： Benno Orschel ,  Keiichi Takanashi

    发明人： Benno Orschel ,  Keiichi Takanashi

    IPC分类号： C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C30B35/00 ,  C30B13/28 ,  C30B15/20 ,  C30B15/26

    CPC分类号： C30B29/06 ,  C30B15/26 ,  G01B11/08 ,  G06T7/12 ,  G06T2207/30148 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： The present invention provides a method and apparatus for controlling the growth of a silicon ingot in which the diameter of the growing silicon ingot can be accurately measured. A camera captures an image of the interface ring between the growing silicon ingot and the silicon melt. An image processor extracts local intensity maxima from the captured image, which are then digitized into an image data which comprises attributes of the pixels forming the local intensity maxima. An analyzer statistically analyzes the image data to derive parameters of an equation statistically simulating the interface ring. A probabilistic filter conducts the statistical analysis on the equation in which the respective pixels are weighted by their weight factors. The weight factor functions to attenuate the effect of noises caused by pixels which do not represent the interface ring. The statistical analysis may be repeated, using the renewed parameters, to progressively attenuate the effect of the noises to thereby obtain a satisfactorily accurate diameter of the silicon ingot.

    摘要翻译： 本发明提供了一种用于控制硅锭生长的方法和装置，其中可以精确地测量生长的硅锭的直径。 相机捕获生长的硅锭和硅熔体之间的界面环的图像。 图像处理器从捕获的图像中提取局部强度最大值，然后数字化为包括形成局部强度最大值的像素的属性的图像数据。 分析仪统计分析图像数据，得出统计模拟界面环的方程式的参数。 概率滤波器对各个像素的权重因子加权的方程进行统计分析。 权重因子用于衰减由不表示接口环的像素引起的噪声的影响。 可以使用更新的参数重复统计分析来逐渐衰减噪声的影响，从而获得令人满意的硅锭的精确直径。

    METHOD FOR CORRECTING SPEED DEVIATIONS BETWEEN ACTUAL AND NOMINAL PULL SPEED DURING CRYSTAL GROWTH
    9.
    发明申请
    METHOD FOR CORRECTING SPEED DEVIATIONS BETWEEN ACTUAL AND NOMINAL PULL SPEED DURING CRYSTAL GROWTH 有权
    在晶体生长期间校正实际和标称拉拔速度之间的速度偏差的方法

    公开(公告)号：US20110060467A1

    公开(公告)日：2011-03-10

    申请号：US12557167

    申请日：2009-09-10

    申请人： Benno Orschel ,  Keiichi Takanashi

    发明人： Benno Orschel ,  Keiichi Takanashi

    IPC分类号： G05B15/02 ,  C30B15/30

    CPC分类号： C30B15/30 ,  C30B15/20 ,  G05B11/06 ,  Y10T117/1008

    摘要： A system and method correct crystal pulling motor speed deviations in a crystal pulling mechanism. In a first embodiment, a processor implements a tracking filter by estimating new filter state based on previous state and the since-then-travelled nominal distance, and then updating the filter state based on estimation error and filter gains which are also functions of the travelled nominal distance. In a second embodiment, a harmonic tracking filter suppresses residual harmonic modulation and allows a short time constant. Rapid variations of pulling speed may thus be corrected.

    摘要翻译： 系统和方法在晶体拉动机构中纠正晶体拉动电机的转速偏差。 在第一实施例中，处理器通过基于先前状态和自然行进的标称距离估计新的滤波器状态来实现跟踪滤波器，然后基于估计误差和滤波器增益来更新滤波器状态，滤波器增益也是所行进的函数 公称距离 在第二实施例中，谐波跟踪滤波器抑制残余谐波调制并允许短时间常数。 因此可以纠正拉动速度的快速变化。

    METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS
    10.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS 有权

    公开(公告)号：US20100206219A1

    公开(公告)日：2010-08-19

    申请号：US12719405

    申请日：2010-03-08

    申请人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    发明人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    IPC分类号： C30B15/24

    CPC分类号： C30B15/22 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032

    摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.