Abstract:
A CMOS image sensor having one or more pixels, e.g. in an array, whereby each of the pixels having two or more sub-pixel elements for generating charge according to incident light intensity as well as a common charge sensitive device such as an amplifier coupled to two or more sub-pixel elements of a respective pixel. Charges generated by the two or more sub-pixel elements are added and integrated over respective integration time periods, to provide a signal representing the integrated charges. The circuit can be configured so that the two or more sub-pixel elements have different integration time periods. By combining charges at the charge sensitive device rather than combining outputs of multiple such devices, the amount of read noise can be reduced.
Abstract:
A device for detecting infrared radiation comprising a resistive imaging bolometer intended to be electrically connected to a circuit for measuring a resistance of the bolometer. It comprises means of controlling the resistance of the imaging bolometer by injecting current into the bolometer.
Abstract:
A device for detecting electromagnetic radiation, especially infrared radiation, including an array of elementary bolometers which are sensitive to the incident radiation and are referred to as “active” bolometers and an additional row of bolometers which are substantially insensitive to the radiation and are referred to as “blind” bolometers. The active and blind bolometers are formed on a substrate in which a read circuit is produced for sequential addressing of each of the rows of the array and the row of blind bolometers, each of the bolometers in the same row being biased simultaneously. The read circuit includes a source for producing a reference current (Iref) on the basis of an additional blind bolometer which is also formed on the substrate and means of copying the reference current (Iref) to each of the columns of the array consisting of a current mirror.
Abstract:
A device for detecting infrared radiation comprising an array of bolometers for detecting radiation; and in order to read each bolometer, a signal shaping circuitry comprising: a circuitry capable of biasing the bolometer at a predetermined voltage in order to make current flow therethrough; a circuitry capable of generating a common-mode current; and a circuitry capable of integrating the difference between the current that flows through the bolometer and the common-mode current. According to the invention, the device comprises a circuitry capable of injecting current into each bolometer in order to shift its resistance by a predetermined quantity that depends on its offset, current injection being performed prior to readout biasing of the bolometer and the shift being performed according to the direction in which the bolometer's resistance varies as a function of temperature. In addition, correction circuitry is capable of shifting the resistances of bolometers towards a common value.
Abstract:
A circuit for calculating the fused sum of an addend and product of two multiplicands, the addend and multiplicands being binary floating-point numbers represented in a standardized format as a mantissa and an exponent is provided. The multiplicands are in a lower precision format than the addend, with q>2p, where p and q are respectively the mantissa size of the multiplicand precision format and the addend precision format. The circuit includes a p-bit multiplier receiving the mantissas of the multiplicands; a shift circuit that aligns the mantissa of the addend with the product output by the multiplier based on the exponent values of the addend and multiplicands; and an adder that processes q-bit mantissas, receiving the aligned mantissa of the addend and the product, the input lines of the adder corresponding to the product being completed to the right by lines at 0 to form a q-bit mantissa.
Abstract:
The invention relates to an active-pixel sensor including an electromagnetic radiation detector, comprising a transistor amplifier, a series memory capacitor and a parallel load capacitor that are driven by the transistor amplifier.
Abstract:
A device for detecting infrared radiation comprising an array of bolometric detectors which are sensitive to incident radiation and are referred to as “active” and a bolometer which is insensitive to said radiation and is referred to as “blind” formed on a substrate in which a read circuit is produced for sequentially addressing each of the rows of detectors of the array, each of the active bolometers in a single row being biased simultaneously. The read circuit also comprises means of producing a reference current (Iref) based on the blind bolometer; means of simultaneously copying the reference current (Iref) for each column of the array; and a plurality of current integrators, each associated with one column of the array and each designed to integrate the difference between the current flowing through the active bolometer of the row which is currently being read and said thus copied reference current.
Abstract:
The invention relates to a device for detecting an electromagnetic radiation comprising a resistive imaging bolometer sensitive to the electromagnetic radiation to be detected, intended to be connected electrically to a signal shaping circuit, and a resistive common mode rejection bolometer that is associated electrically with the imaging bolometer, so that the current flowing through the common mode rejection bolometer is subtracted from the current flowing through the imaging bolometer, wherein it comprises means for controlling the resistance of the common mode rejection bolometer by injecting current therein.
Abstract:
A circuit for calculating the fused sum of an addend and product of two multiplication operands, the addend and multiplication operands being binary floating-point numbers represented in a standardized format as a mantissa and an exponent is provided. The multiplication operands are in a lower precision format than the addend, with q>2p, where p and q are the mantissa size of the multiplication operand and addend precision formats. The circuit includes a p-bit multiplier receiving the mantissas of the multiplication operands; a shift circuit aligning the mantissa of the addend with the product output by the multiplier based on the exponent values of the addend and multiplication operands; and an adder processing q-bit mantissas, receiving the aligned mantissa of the addend and the product, the input lines of the adder corresponding to the product being completed to the right by lines at 0 to form a q-bit mantissa.
Abstract:
A CMOS image sensor having one or more pixels, e.g. in an array, whereby each of the pixels having two or more sub-pixel elements for generating charge according to incident light intensity as well as a common charge sensitive device such as an amplifier coupled to two or more sub-pixel elements of a respective pixel. Charges generated by the two or more sub-pixel elements are added and integrated over respective integration time periods, to provide a signal representing the integrated charges. The circuit can be configured so that the two or more sub-pixel elements have different integration time periods. By combining charges at the charge sensitive device rather than combining outputs of multiple such devices, the amount of read noise can be reduced.