Abstract:
The present disclosure relates to a glycyrrhizic acid bacterial cellulose composite for promoting growth and development of hair follicles in skins, in particular, the glycyrrhizic acid bacterial cellulose composite for promoting growth and development of hair follicles in skin includes glycyrrhizic acid and bacterial cellulose.
Abstract:
Provided is a method of preventing or treating gastroesophageal reflux disease, including administering to an subject in need thereof a composition including a plurality of fibers formed of β-1-4-glucan, wherein the fibers have a diameter between 15 nm and 35 nm and a mean length of between 1.5 μm and 3.5 μm.
Abstract:
The electronic circuit protector of the invention comprises a first semiconductor, a second semiconductor, a third semiconductor, a first diode, a second diode, a first resistor, a second resistor and a third resistor, constituting an application circuit with load overload or short circuit protection function, which avoids the damage caused by overload or short circuit at both terminals of the load.
Abstract:
In many applications, the assessment of the internal structures of tubular structures (such as in medical imaging, blood vessels, bronchi, and colon) has become a topic of high interest. Many 3D visualization techniques, such as “fly-through” and curved planar reformation (CPR), have been used for visualization of the lumens for medical applications. However, all the existing visualization techniques generate highly distorted images of real objects. This invention provides direct manipulation based on the centerline of the object and visualization of the 3D internal structures of a tubular object without any noticeable distortion. For the first time ever, the lumens of a human colon is visualized as it is in reality. In many medical applications, this can be used for diagnosis, planning of surgery or stent placements, etc. and consequently improves the quality of healthcare significantly. The same technique can be used in many other applications.
Abstract:
The method for using semiconductor intelligence line of the invention, which is to set the semiconductor intelligence line on the drain source voltage axis of the first semiconductor output characteristic, has a gate voltage setting, which indicates the function of limiting the application limit of the drain source current on the output characteristic.
Abstract:
A remote automatic control power supply system is disclosed, comprising a power supply control device and an electronic device having a control circuit, in which the power supply control device is configured to control whether the power supply is to be outputted, and the control circuit can set the GPS coordinate and the starting distance value close to the power supply control device; afterwards, it is possible to operate the control circuit via the backend of the electronic device such that, when the distance between the real-time GPS coordinate of the electronic device and the GPS coordinate of the power supply control device is equivalent to the starting distance value, the control circuit can transmit a power control signal to the power supply control device thereby allowing the power supplying control device to output the electric power to the receiving end.
Abstract:
A protection layer for use in fabrication of failure analysis (FA) sample is disclosed, which principally comprises a first thin film, a buffer thin film and a second thin film By forming the protection layer on a surface of a malfunction device die, a FA sample of the malfunction device die is obtained. As a result, in the case of treating the sample with a FIB thinning process, there are no cracks, distortion, and/or collapse resulted from inter-elemental isobaric interferences, stress effect or charge accumulation occurring on the surface layer of the malfunction device die because of the protection of the protection layer. On the other hand, this protection layer can also be applied to a microLED element or a VCSEL element, so as to make microLED element and the VCSEL element possess excellent stress withstanding capability.
Abstract:
The present disclosure involves a FinFET. The FinFET includes a fin structure formed over a substrate. A gate dielectric layer is least partially wrapped around a segment of the fin structure. The gate dielectric layer contains a high-k gate dielectric material. The FinFET includes a polysilicon layer conformally formed on the gate dielectric layer. The FinFET includes a metal gate electrode layer formed over the polysilicon layer. The present disclosure provides a method of fabricating a FinFET. The method includes providing a fin structure containing a semiconductor material. The method includes forming a gate dielectric layer over the fin structure, the gate dielectric layer being at least partially wrapped around the fin structure. The method includes forming a polysilicon layer over the gate dielectric layer, wherein the polysilicon layer is formed in a conformal manner. The method includes forming a dummy gate layer over the polysilicon layer.
Abstract:
A light emitting mirror structure includes a casing caved in to form an accommodating space having a light guiding area and a mirror area, and at least one surface of the casing as a sidewall communicating with the accommodating space. The mirror structure includes a light guiding device having a light guide plate, and a light emitting member disposed on a side of the light guide plate, and the light guiding device is placed at the light guiding area of the accommodating space of the casing. A mirror body having a substrate and a mirror surface located on the substrate is provided for the disclosed mirror structure also. The mirror body is integrated on the mirror area of the accommodating space, the light guiding plate causes a light to be emitted through the sidewall at a first side of the mirror body, and the mirror surface is uncovered by the sidewall.